scholarly journals Tuning electrical properties of graphite oxide by plasma

2013 ◽  
Vol 371 (2000) ◽  
pp. 20120308 ◽  
Author(s):  
Hongfei Zhu ◽  
Deyang Ji ◽  
Lang Jiang ◽  
Huanli Dong ◽  
Wenping Hu
Keyword(s):  
Electrical Properties ◽  
Graphite Oxide ◽  
Hydrogen Plasma ◽  
High Conductivity ◽  
Large Area ◽  
Ammonia Plasma ◽  
Reduced Graphite Oxide ◽  
P Type ◽  
Carbon Based ◽  
The Way

The electrical properties of graphite oxide (GO) can be tuned consecutively by treating samples with ammonia and hydrogen plasma. When altering ammonia plasma time from 10 to 4.5 min, large area (greater than 100×100 μm 2 ), n-type, ambipolar and p-type semiconducting reduced graphite oxide (RGO) sheets could be obtained. The highest mobilities of the electron and hole are 5.41 and 2.10 cm 2  V −1  s −1 at low operational voltage (3 or −3 V, respectively). When treating a GO film with hydrogen:argon (9:1) plasma, high conductivity RGO was obtained with conductivity around 630 S cm −1 . It is anticipated that this study could pave the way towards carbon-based electronics.

scholarly journals Large Area Growth and Electrical Properties of p-Type WSe2 Atomic Layers

Nano Letters ◽  
2014 ◽  
Vol 15 (1) ◽  
pp. 709-713 ◽  
Author(s):  
Hailong Zhou ◽  
Chen Wang ◽  
Jonathan C. Shaw ◽  
Rui Cheng ◽  
Yu Chen ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Large Area ◽  
Area Growth ◽  
P Type

scholarly journals Impact of Hydrogenation on Electrical Properties of NiSi2 Precipitates in Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 279-284 ◽  
Author(s):  
O.F. Vyvenko ◽  
N.V. Bazlov ◽  
M.V. Trushin ◽  
A.A. Nadolinski ◽  
Michael Seibt ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Hydrogen ◽  
Deep Level ◽  
Hydrogen Plasma ◽  
Extended Defects ◽  
Transient Spectroscopy ◽  
P Type ◽  
Plasma Hydrogenation ◽  
Type Sample

Influence of annealing in molecular hydrogen as well as of treatment in hydrogen plasma (hydrogenation) on the electrical properties of NiSi2 precipitates in n- and p-type silicon has been studied by means of deep level transient spectroscopy (DLTS). Both annealing and hydrogenation gave rise to noticeable changes of the shape of the DLTS-peak and of the character of its dependence on the refilling pulse duration that according to [1] allows one to classify the electronic states of extended defects as “band-like” or “localized”. In both n- and p-type samples DLTS-peak in the initial as quenched samples showed bandlike behaviour. Annealing or hydrogenation of n-type samples converted the band-like states to the localised ones but differently shifted the DLTS-peak to higher temperatures. In p-type samples, the initial “band-like” behaviour of DLTS peak remained qualitatively unchanged after annealing or hydrogenation. A decrease of the DLTS-peak due to precipitates and the appearance of the peaks due to substitutional nickel and its complexes were found in hydrogenated p-type sample after removal of a surface layer of 10-20µm.

Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

2004 ◽  
Vol 33 (5) ◽  
pp. 460-466 ◽  
Author(s):  
S. Tsukimoto ◽  
K. Nitta ◽  
T. Sakai ◽  
M. Moriyama ◽  
Masanori Murakami
Keyword(s):  
Electrical Properties ◽  
Ohmic Contacts ◽  
P Type

Study of the electrical properties of  Cz p-type solar-grade silicon wafers against the high-temperature processes

2021 ◽  
Vol 127 (6) ◽  
Author(s):  
Mohamed Maoudj ◽  
Djoudi Bouhafs ◽  
Nacer Eddine Bourouba ◽  
Abdelhak Hamida-Ferhat ◽  
Abdelkader El Amrani
Keyword(s):  
High Temperature ◽  
Electrical Properties ◽  
Silicon Wafers ◽  
Solar Grade Silicon ◽  
High Temperature Processes ◽  
Grade Silicon ◽  
P Type
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