scholarly journals Tunnel magnetoresistance effect and magnetic damping in half-metallic Heusler alloys

2011 ◽  
Vol 369 (1948) ◽  
pp. 3037-3053 ◽  
Author(s):  
M. Oogane ◽  
S. Mizukami
Keyword(s):  
Spin Polarization ◽  
High Spin ◽  
Heusler Alloy ◽  
Heusler Alloys ◽  
Magnetoresistance Effect ◽  
Half Metallicity ◽  
Half Metallic ◽  
Tunnel Magnetoresistance ◽  
Magnetic Damping ◽  
High Spin Polarization

Some full-Heusler alloys, such as Co 2 MnSi and Co 2 MnGe, are expected to be half-metallic ferromagnetic material, which has complete spin polarization. They are the most promising materials for realizing half-metallicity at room temperature owing to their high Curie temperature. We demonstrate a huge tunnel magnetoresistance effect in a magnetic tunnel junction using a Co 2 MnSi Heusler alloy electrode. This result proves high spin polarization of the Heusler alloy. We also demonstrate a small magnetic damping constant in Co 2 FeAl epitaxial film. The very high spin polarization and small magnetic constant of Heusler alloys will be a great advantage for future spintronic device applications.

Polycrystalline Co2Mn-based Heusler thin films with high spin polarization and low magnetic damping

2019 ◽  
Vol 115 (17) ◽  
pp. 172401 ◽  
Author(s):  
C. Guillemard ◽  
S. Petit-Watelot ◽  
J.-C. Rojas-Sánchez ◽  
J. Hohlfeld ◽  
J. Ghanbaja ◽  
...  
Keyword(s):  
Thin Films ◽  
Spin Polarization ◽  
High Spin ◽  
Magnetic Damping ◽  
High Spin Polarization

scholarly journals High spin polarization and spin splitting in equiatomic quaternary CoFeCrAl Heusler alloy

2015 ◽  
Vol 394 ◽  
pp. 82-86 ◽  
Author(s):  
Lakhan Bainsla ◽  
A.I. Mallick ◽  
A.A. Coelho ◽  
A.K. Nigam ◽  
B.S.D.Ch.S. Varaprasad ◽  
...  
Keyword(s):  
Spin Polarization ◽  
High Spin ◽  
Heusler Alloy ◽  
Spin Splitting ◽  
High Spin Polarization

Searching high spin polarization ferromagnet in Heusler alloy via machine learning

2020 ◽  
Vol 32 (20) ◽  
pp. 205901
Author(s):  
Xiao Hu ◽  
Yaqiong Zhang ◽  
Shuaiyu Fan ◽  
Xin Li ◽  
Zhenjie Zhao ◽  
...  
Keyword(s):  
Machine Learning ◽  
Spin Polarization ◽  
High Spin ◽  
Heusler Alloy ◽  
High Spin Polarization

Electronic Structure and Spin-Injection of Co-Based Heusler Alloy/ Semiconductor Junctions

2011 ◽  
Vol 470 ◽  
pp. 54-59
Author(s):  
Hiroyoshi Itoh ◽  
Syuta Honda ◽  
Junichiro Inoue
Keyword(s):  
Electronic Structure ◽  
Heusler Alloy ◽  
Spin Injection ◽  
Magnetic Moments ◽  
Heusler Alloys ◽  
Growth Direction ◽  
Layer By Layer ◽  
Half Metallicity ◽  
Half Metallic ◽  
Layer Stacking

The electronic structures of Co-based Heusler alloys with nonstoichiometric atomic compositions as well as those at the interface of semiconductor junctions are investigated using first principles band calculations. It is shown that the electronic structure of a Co-based Heusler alloy is half-metallic, even for nonstoichiometric but Co-rich compositions, whereas the half-metallicity is lost for Co-poor compositions. It is also shown that magnetic moments at the interface of Co2MnSi/ Si junctions are sensitive to the growth direction and interface structure of the junctions. Efficient spin-injection into Si can be achieved by using a (111)-oriented Co-rich Heusler alloy and controlling the layer-by-layer stacking sequence at the interface.

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