Tunnel magnetoresistance effect in double magnetic tunnel junctions using half-metallic Heusler alloy electrodes

2009 ◽  
Vol 105 (7) ◽  
pp. 07C920 ◽  
Author(s):  
Yusuke Ohdaira ◽  
Mikihiko Oogane ◽  
Yasuo Ando
Keyword(s):  
Heusler Alloy ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Magnetoresistance Effect ◽  
Half Metallic ◽  
Tunnel Magnetoresistance

scholarly journals Tunnel magnetoresistance effect and magnetic damping in half-metallic Heusler alloys

2011 ◽  
Vol 369 (1948) ◽  
pp. 3037-3053 ◽  
Author(s):  
M. Oogane ◽  
S. Mizukami
Keyword(s):  
Spin Polarization ◽  
High Spin ◽  
Heusler Alloy ◽  
Heusler Alloys ◽  
Magnetoresistance Effect ◽  
Half Metallicity ◽  
Half Metallic ◽  
Tunnel Magnetoresistance ◽  
Magnetic Damping ◽  
High Spin Polarization

Some full-Heusler alloys, such as Co 2 MnSi and Co 2 MnGe, are expected to be half-metallic ferromagnetic material, which has complete spin polarization. They are the most promising materials for realizing half-metallicity at room temperature owing to their high Curie temperature. We demonstrate a huge tunnel magnetoresistance effect in a magnetic tunnel junction using a Co 2 MnSi Heusler alloy electrode. This result proves high spin polarization of the Heusler alloy. We also demonstrate a small magnetic damping constant in Co 2 FeAl epitaxial film. The very high spin polarization and small magnetic constant of Heusler alloys will be a great advantage for future spintronic device applications.

scholarly journals Improved tunnel magnetoresistance characteristics of magnetic tunnel junctions with a Heusler alloy thin film of Co2MnGe and a MgO tunnel barrier

2007 ◽  
Vol 101 (9) ◽  
pp. 09J513 ◽  
Author(s):  
Shinya Hakamata ◽  
Takayuki Ishikawa ◽  
Takao Marukame ◽  
Ken-ichi Matsuda ◽  
Tetsuya Uemura ◽  
...  
Keyword(s):  
Thin Film ◽  
Heusler Alloy ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Barrier ◽  
Alloy Thin Film ◽  
Tunnel Magnetoresistance
Sign in / Sign up

Export Citation Format

Share Document