scholarly journals Effects of annealing atmosphere on the performance of Cu(InGa)Se 2 films sputtered from quaternary targets

2020 ◽  
Vol 7 (10) ◽  
pp. 200662
Author(s):  
Leng Zhang ◽  
Yongyi Yu ◽  
Jing Yu ◽  
Yaowei Wei

Quaternary sputtering without additional selenization is a low-cost alternative method for the preparation of Cu(InGa)Se 2 (CIGS) thin film for photovoltaics. However, without selenization, the device efficiency is much lower than that with selenization. To comprehensively examine this problem, we compared the morphologies, depth profiles, compositions, electrical properties and recombination mechanism of the absorbers fabricated with and without additional selenization. The results revealed that the amount of surface Se on CIGS films annealed in a Se-free atmosphere is less than that on CIGS films annealed in a Se-containing atmosphere. Additionally, the lower amount of surface Se reduced the carrier concentration, enhanced the resistivity of the CIGS film and allowed CIGS/CdS interface recombination to be the dominant recombination mechanism of CIGS device. The increase of interface recombination reduced the efficiency of the device annealed in a Se-free atmosphere.

2011 ◽  
Vol 110-116 ◽  
pp. 1187-1190
Author(s):  
Hung Ing Chen ◽  
Jen Cheng Wang ◽  
Chia Hui Fang ◽  
Yu Ting Liang ◽  
Tung Po Hsieh ◽  
...  

The result of an extensive research on this material is the achievement of approaching 20% efficiency by the co-evaporation of copper, indium, gallium and selenium elements. Recently, photoluminescence (PL) spectra have been studied on Cu (In,Ga) Se2(CIGS) thin films and CIGS solar cells, to clarify the carrier recombination process. The CIGS layers were grown on the Mo-coated soda-lime glass substrate by the three stage process and four sources co-evaporation of constituent elements onto a heated substrate. It has found that the structural and optical properties of the CIGS thin film was influenced by the Cu/Ga ratio (RCu/Ga) of the CIGS thin film compositional variation. The X-ray diffraction and PL spectra were used to characterize the structure property and carrier recombination mechanism of CIGS thin film.


2016 ◽  
Vol 4 (1) ◽  
pp. 21-24
Author(s):  
Gun Yeol Beak ◽  
Chan-Wook Jeon

Solar Energy ◽  
2016 ◽  
Vol 132 ◽  
pp. 547-557 ◽  
Author(s):  
Ming-Hua Yeh ◽  
Shih-Jung Ho ◽  
Guang-Hong Chen ◽  
Chang-Wei Yeh ◽  
Pin-Ru Chen ◽  
...  

Solar Energy ◽  
2016 ◽  
Vol 125 ◽  
pp. 415-425 ◽  
Author(s):  
Ming-Hua Yeh ◽  
Hong-Ru Hsu ◽  
Kai-Cheng Wang ◽  
Shih-Jung Ho ◽  
Guang-Hong Chen ◽  
...  

Solar Energy ◽  
2004 ◽  
Vol 77 (6) ◽  
pp. 749-756 ◽  
Author(s):  
M. Kaelin ◽  
D. Rudmann ◽  
A.N. Tiwari

Author(s):  
T. P. Nolan

Thin film magnetic media are being used as low cost, high density forms of information storage. The development of this technology requires the study, at the sub-micron level, of morphological, crystallographic, and magnetic properties, throughout the depth of the deposited films. As the microstructure becomes increasingly fine, widi grain sizes approaching 100Å, the unique characterization capabilities of transmission electron microscopy (TEM) have become indispensable to the analysis of such thin film magnetic media.Films were deposited at 225°C, on two NiP plated Al substrates, one polished, and one circumferentially textured with a mean roughness of 55Å. Three layers, a 750Å chromium underlayer, a 600Å layer of magnetic alloy of composition Co84Cr14Ta2, and a 300Å amorphous carbon overcoat were then sputter deposited using a dc magnetron system at a power of 1kW, in a chamber evacuated below 10-6 torr and filled to 12μm Ar pressure. The textured medium is presently used in industry owing to its high coercivity, Hc, and relatively low noise. One important feature is that the coercivity in the circumferential read/write direction is significandy higher than that in the radial direction.


2021 ◽  
Vol 222 ◽  
pp. 110917
Author(s):  
Shiqing Cheng ◽  
Kaizhi Zhang ◽  
Yunxiang Zhang ◽  
Zhichao He ◽  
Baolai Liang ◽  
...  

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