B21-P-05Characterization of InxGa1-xAs/InAs Coaxial Nanorod Grown on Graphene Layers by Catalyst-Free Molecular Beam Epitaxy

Microscopy ◽  
2015 ◽  
Vol 64 (suppl 1) ◽  
pp. i99.2-i99
Author(s):  
Janghyun Jo ◽  
Youngbin Tchoe ◽  
Gyu-Chul Yi ◽  
Miyoung Kim
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Graphene Layers ◽  
Catalyst Free

scholarly journals Catalyst-free growth of InAs/InxGa1−xAs coaxial nanorod heterostructures on graphene layers using molecular beam epitaxy

2015 ◽  
Vol 7 (8) ◽  
pp. e206-e206 ◽  
Author(s):  
Youngbin Tchoe ◽  
Janghyun Jo ◽  
Miyoung Kim ◽  
Gyu-Chul Yi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Graphene Layers ◽  
Catalyst Free ◽  
Free Growth

InAs1−xPxnanowires grown by catalyst-free molecular-beam epitaxy

2013 ◽  
Vol 24 (8) ◽  
pp. 085707 ◽  
Author(s):  
I Isakov ◽  
M Panfilova ◽  
M J L Sourribes ◽  
V Tileli ◽  
A E Porter ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Catalyst Free

Vapor-Solid Selective Area Molecular Beam Epitaxy and N-Type Doping of Catalyst-Free GaAs:Si Nanowires on Silicon

2019 ◽  
Author(s):  
Daniel Ruhstorfer ◽  
Simon Mejia ◽  
Hubert Riedl ◽  
Jonathan James Finley ◽  
Gregor Koblmuller
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Catalyst Free ◽  
Selective Area

Foreign-catalyst-free GaSb nanowires directly grown on cleaved Si substrates by molecular-beam epitaxy

2020 ◽  
Vol 31 (15) ◽  
pp. 155601
Author(s):  
Lianjun Wen ◽  
Dong Pan ◽  
Dunyuan Liao ◽  
Jianhua Zhao
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrates ◽  
Catalyst Free

Polarization-resolved photoluminescence study of individual GaN nanowires grown by catalyst-free molecular beam epitaxy

2006 ◽  
Vol 88 (21) ◽  
pp. 213106 ◽  
Author(s):  
John B. Schlager ◽  
Norman A. Sanford ◽  
Kris A. Bertness ◽  
Joy M. Barker ◽  
Alexana Roshko ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Photoluminescence Study ◽  
Gan Nanowires ◽  
Catalyst Free

Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy

2016 ◽  
Vol 108 (5) ◽  
pp. 053110 ◽  
Author(s):  
J. Treu ◽  
M. Speckbacher ◽  
K. Saller ◽  
S. Morkötter ◽  
M. Döblinger ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Alloy Composition ◽  
Nanowire Arrays ◽  
Catalyst Free ◽  
Selective Area

scholarly journals Catalyst-free growth of Bi2Te3 nanostructures by molecular beam epitaxy

2014 ◽  
Vol 105 (15) ◽  
pp. 153114 ◽  
Author(s):  
S. E. Harrison ◽  
P. Schönherr ◽  
Y. Huo ◽  
J. S. Harris ◽  
T. Hesjedal
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Catalyst Free ◽  
Free Growth

Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy

Nano Letters ◽  
2010 ◽  
Vol 10 (9) ◽  
pp. 3355-3359 ◽  
Author(s):  
Wei Guo ◽  
Meng Zhang ◽  
Animesh Banerjee ◽  
Pallab Bhattacharya
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Catalyst Free ◽  
Gan Nanowire

Effects of doping and planar defects on the thermoelectric properties of InAs nanowires

RSC Advances ◽  
2016 ◽  
Vol 6 (10) ◽  
pp. 7791-7797 ◽  
Author(s):  
Seong Gi Jeon ◽  
Dong Woo Park ◽  
Ho Sun Shin ◽  
Hyun Min Park ◽  
Si Young Choi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermoelectric Properties ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Planar Defects ◽  
Catalyst Free ◽  
Inas Nanowires ◽  
Si Doped

Undoped InAs and Si-doped InAs nanowires with stacking faults and twins were synthesized by catalyst-free molecular beam epitaxy and their thermoelectric enhancements due to planar defects were experimentally and theoretically demonstrated.

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