From the physics of secondary electron emission to image contrasts in scanning electron microscopy

2012 ◽  
Vol 61 (5) ◽  
pp. 261-284 ◽  
Author(s):  
J. Cazaux
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Scanning Electron

Secondary electron emission from diamond: Physical modeling and application to scanning electron microscopy

2001 ◽  
Vol 89 (1) ◽  
pp. 689-696 ◽  
Author(s):  
P. Ascarelli ◽  
E. Cappelli ◽  
F. Pinzari ◽  
M. C. Rossi ◽  
S. Salvatori ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Emission ◽  
Physical Modeling ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Scanning Electron

Secondary Electron Emission Contrast of Quantum Wells in GaAs p-i-n Junctions

2009 ◽  
Vol 15 (2) ◽  
pp. 125-129 ◽  
Author(s):  
Enrique Grunbaum ◽  
Zahava Barkay ◽  
Yoram Shapira ◽  
Keith W.J. Barnham ◽  
David B. Bushnell ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Quantum Wells ◽  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Contrast Mechanisms ◽  
Novel Method ◽  
Profile Changes ◽  
Scanning Electron

AbstractThe secondary electron (SE) signal over a cleaved surface of GaAs p-i-n solar cells containing stacks of quantum wells (QWs) is analyzed by high-resolution scanning electron microscopy. The InGaAs QWs appear darker than the GaAsP barriers, which is attributed to the differences in electron affinity. This method is shown to be a powerful tool for profiling the conduction band minimum across junctions and interfaces with nanometer resolution. The intrinsic region is shown to be pinned to the Fermi level. Additional SE contrast mechanisms are discussed in relation to the dopant regions themselves as well as the AlGaAs window at the p-region. A novel method of in situ observation of the SE profile changes resulting from reverse biasing these structures shows that the built-in potential may be deduced. The obtained value of 0.7 eV is lower than the conventional bulk value due to surface effects.

Scanning Electron Microscopy-cuticular Lesions on the Roundworm Ascaris Suum

1970 ◽  
Vol 28 ◽  
pp. 114-115
Author(s):  
P. A. Madden ◽  
W. R. Anderson
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Freeze Drying ◽  
Room Temperature ◽  
Secondary Electron ◽  
Distilled Water ◽  
Freeze Dried ◽  
Silver Paint ◽  
To Come ◽  
Scanning Electron

The intestinal roundworm of swine is pinkish in color and about the diameter of a lead pencil. Adult worms, taken from parasitized swine, frequently were observed with macroscopic lesions on their cuticule. Those possessing such lesions were rinsed in distilled water, and cylindrical segments of the affected areas were removed. Some of the segments were fixed in buffered formalin before freeze-drying; others were freeze-dried immediately. Initially, specimens were quenched in liquid freon followed by immersion in liquid nitrogen. They were then placed in ampuoles in a freezer at −45C and sublimated by vacuum until dry. After the specimens appeared dry, the freezer was allowed to come to room temperature slowly while the vacuum was maintained. The dried specimens were attached to metal pegs with conductive silver paint and placed in a vacuum evaporator on a rotating tilting stage. They were then coated by evaporating an alloy of 20% palladium and 80% gold to a thickness of approximately 300 A°. The specimens were examined by secondary electron emmission in a scanning electron microscope.

Scanning Electron Microscopy and Secondary-Electron Imaging Microscopy

2012 ◽  
pp. 2280-2280
Author(s):  
Yimei Zhu ◽  
Hiromi Inada ◽  
Achim Hartschuh ◽  
Li Shi ◽  
Ada Della Pia ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Secondary Electron ◽  
Electron Imaging ◽  
Scanning Electron
Sign in / Sign up

Export Citation Format

Share Document