High-resolution three-dimensional scanning transmission electron microscopy characterization of oxide-nitride-oxide layer interfaces in Si-based semiconductors using computed tomography
2019 ◽
Vol 60
(4)
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pp. 525-530
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2009 ◽
1988 ◽
Vol 263
(32)
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pp. 16954-16962
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Vol 23
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pp. 661-667
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Vol 47
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pp. 5330-5332
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Vol 142
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pp. 15649-15653