Local lattice parameter determination of a silicon (001) layer grown on a sapphire (1102) substrate using convergent-beam electron diffraction

2006 ◽  
Vol 55 (3) ◽  
pp. 129-135 ◽  
Author(s):  
T. Akaogi
Keyword(s):  
Electron Diffraction ◽  
Lattice Parameter ◽  
Convergent Beam Electron Diffraction ◽  
Parameter Determination ◽  
Beam Electron ◽  
Local Lattice ◽  
Convergent Beam

Lattice parameter measurement by convergent-beam electron diffraction

1994 ◽  
Vol 52 ◽  
pp. 952-953
Author(s):  
J. M. Howe
Keyword(s):  
Electron Microscopy ◽  
Electron Diffraction ◽  
Lattice Parameter ◽  
Convergent Beam Electron Diffraction ◽  
Lattice Parameters ◽  
Parameter Measurement ◽  
Parameter Determination ◽  
Beam Electron ◽  
Lattice Parameter Measurement ◽  
Convergent Beam

Convergent-beam electron diffraction (CBED) should be an ideal technique for determining the lattice parameters of regions as small as a nanometer in size. This capability was first demonstrated about fifteen years ago and CBED has been used in a number of analyses since this time. In general though, the technique has been slow to catch on, except in the semiconductor area, where CBED has been usedextensively to measure lattice parameters in Si/SixGe1-x superlattices. Possible reasons for the slow adoption of this technique by the electron microscopy and materials science communities may be that: 1) CBED is usually dynamical, and it has become apparent that the use of simple kinematical calculations can lead to substantial errors (or at least some uncertainty) in quantitative lattice parameter determination, 2) a standardized procedure for determining the lattice parameters in the most general case, when six parameters are unknown, has not been established, and 3) surface relaxation associated with the thin foils used in transmission electron microscopy (TEM) may distort the sample and cause it to be unlike bulk material. The purpose of this paper is to assess the present status of lattice parameter measurement by CBED, particularly with respect to the three areas just mentioned.

Strain measurement in In0.2Ga0.8As/GaAs quantum wires by convergent beam electron diffraction

1995 ◽  
Vol 53 ◽  
pp. 444-445
Author(s):  
S. Hillyard ◽  
Y.-P. Chen ◽  
J.D. Reed ◽  
W.J. Schaff ◽  
L.F. Eastman ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Semiconductor Lasers ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Convergent Beam Electron Diffraction ◽  
Zero Order ◽  
Beam Electron ◽  
Local Lattice ◽  
Device Applications ◽  
Convergent Beam

The positions of high-order Laue zone (HOLZ) lines in the zero order disc of convergent beam electron diffraction (CBED) patterns are extremely sensitive to local lattice parameters. With proper care, these can be measured to a level of one part in 104 in nanometer sized areas. Recent upgrades to the Cornell UHV STEM have made energy filtered CBED possible with a slow scan CCD, and this technique has been applied to the measurement of strain in In0.2Ga0.8 As wires.Semiconductor quantum wire structures have attracted much interest for potential device applications. For example, semiconductor lasers with quantum wires should exhibit an improvement in performance over quantum well counterparts. Strained quantum wires are expected to have even better performance. However, not much is known about the true behavior of strain in actual structures, a parameter critical to their performance.

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