High-resolution transmission electron microscopy and electron energy-loss spectroscopy study of polycrystalline-Si/ZrO2/SiO2/Si metal-oxide-semiconductor structures

2006 ◽  
Vol 55 (1) ◽  
pp. 1-5
Author(s):  
J.-M. Yang
2000 ◽  
Vol 6 (S2) ◽  
pp. 208-209
Author(s):  
Huifang Xu ◽  
Pingqiu Fu

Laihunite that has distorted olivine-type structure with ferric and ferrous irons and ordered distribution of vacancies was first discovered in a high-grade metamorphosed banded iron formation (BIF) [1, 2]. The laihunite coexisting with fayalite (Fe-olivine), magnetite, quartz, ferrosilite, garnet and hedenbergite, formed in the process of oxidation of fayalite [2, 3]. The structure refinement of 1-layer laihunite shows P21/b symmetry and ordered distribution of vacancies in half M1 sites of olivine structure [2, 3]. Early high-resolution transmission electron microscopy (HRTEM) study and HRTEM image simulation of the 1-layer laihunite verified the structure refinement [4].Specimens of weakly oxidized fayalite and laihunite containing fayalite islands collected from Xiaolaihe and Menjiagou of Liaoning Province, NE China, have been studied using selected area electron diffraction (SAED), high-resolution transmission electron microscopy (HRTEM), electron energy-loss spectroscopy (EELS), and X-ray energy-dispersive spectroscopy.


2002 ◽  
Vol 738 ◽  
Author(s):  
K. Dovidenko ◽  
N. L. Abramson ◽  
J. Rullan

ABSTRACTIn this study, we have demonstrated successful site-specific cross-sectioning of carbon-nanotube - metal junctions which provided samples suitable for high resolution transmission electron microscopy and electron energy loss spectroscopy. For the cross-sectioning, we have suggested a modified technique based on combination of the Focused Ion Beam (FIB) lift-out and the conventional Ar+ ion milling techniques. Electron-transparent cross-sections of multiwall carbon nanotubes showing no significant surface amorphization or Ga contamination (typical artifacts of conventional FIB lift-out technique) were obtained. High-resolution transmission electron microscopy and electron energy loss spectroscopy of a multi-wall carbon nanotube cross-section have been carried out.


2005 ◽  
Vol 475-479 ◽  
pp. 3859-3862 ◽  
Author(s):  
Takeo Sasaki ◽  
Teruyasu Mizoguchi ◽  
Katsuyuki Matsunaga ◽  
Shingo Tanaka ◽  
Takahisa Yamamoto ◽  
...  

Interfacial atomic and electronic structures of Cu/Al2O3(0001) and Cu/Al2O3(11 _ ,20) prepared by a pulsed-laser deposition technique were characterized by high-resolution transmission electron microscopy (HRTEM) and electron energy-loss spectroscopy (EELS). It was found that both systems have O-terminated interfaces, irrespective of different substrate orientations. This indicates that Cu-O interactions across the interface play an important role for the Cu/Al2O3 systems.


2004 ◽  
Vol 19 (7) ◽  
pp. 2131-2136 ◽  
Author(s):  
D. Wan ◽  
K. Komvopoulos

Transmission electron microscopy (TEM) and analytic TEM were used to study the microstructure of amorphous carbon (a-C) films of thickness in the range of 5–100 nm deposited on Si(100) by radio-frequency (rf) sputtering. High-resolution cross-section TEM revealed a two-layer structure consisting of the a-C film and an ultrathin interface layer, in agreement with electron energy loss spectroscopy results. The presence of a 35-Å-thick interface layer (regardless of the deposition conditions) indicates that nucleation and initial growth of the a-C films were mainly controlled by the substrate surface condition. Mass-thickness contrast in bright-field TEM images showed an interface layer denser than the a-C film. This layer, believed to consist of Si, a-C, and SiC, enhances the adhesion of the film to the silicon substrate and accommodates the residual stress in the film. High-resolution cross-section TEM images revealed the presence of platelike nanocrystallites (∼35 Å in size) randomly distributed in the a-C film and oriented parallel to the surface. The possible mechanisms leading to the formation of these nanocrystalline structures are discussed in terms of sputtering phenomena occurring during film deposition.


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