Detection of characteristic signals from As-doped (<1 at.%) regions of silicon by transmission electron microscopy and convergent-beam electron diffraction

2003 ◽  
Vol 52 (5) ◽  
pp. 441-448
Author(s):  
M. Terauchi
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Convergent Beam Electron Diffraction ◽  
Beam Electron ◽  
Transmission Electron ◽  
Convergent Beam

Characterization Of APB's In GaP

1996 ◽  
Vol 442 ◽  
Author(s):  
Dov Cohen ◽  
C. Barry Carter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Convergent Beam Electron Diffraction ◽  
Antiphase Boundaries ◽  
Beam Electron ◽  
Transmission Electron ◽  
Convergent Beam ◽  
Crystallographic Orientations

AbstractAntiphase boundaries in GaP crystals epitactically grown on Si (001) have been characterized using transmission electron microscopy. Convergent-beam electron diffraction was used to identify the antiphase-related grains. The antiphase boundaries were observed to adopt facets parallel to specific crystallographic orientations. Furthermore, stacking-fault-like contrast was observed along the interface suggesting that the domains may be offset from one another by a rigid-body lattice translation.

Detection of Characteristic Signals from As-Doped (less than 1 at.%) Regions of Silicon by Transmission Electron Microscopy and Convergent-beam Electron Diffraction

2004 ◽  
Vol 10 (S02) ◽  
pp. 338-339
Author(s):  
Masami Terauchi ◽  
Kenji Tsuda ◽  
Hajime Mitsuishi ◽  
Kazuo Kawamura
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Convergent Beam Electron Diffraction ◽  
Beam Electron ◽  
Transmission Electron ◽  
Convergent Beam

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

scholarly journals Dislocation Analysis in SiGe Heterostructures by Large-Angle Convergent Beam Electron Diffraction

Crystals ◽  
2019 ◽  
Vol 10 (1) ◽  
pp. 5
Author(s):  
Heiko Groiss
Keyword(s):  
Electron Microscopy ◽  
Electron Diffraction ◽  
Strain Relaxation ◽  
Large Angle ◽  
Convergent Beam Electron Diffraction ◽  
Self Organization ◽  
Detailed Knowledge ◽  
Beam Electron ◽  
Transmission Electron ◽  
Convergent Beam

Dislocations play a crucial role in self-organization and strain relaxation mechanisms in SiGe heterostructures. In most cases, they should be avoided, and different strategies exist to exploit their nucleation properties in order to manipulate their position. In either case, detailed knowledge about their exact Burgers vectors and possible dislocation reactions are necessary to optimize the fabrication processes and the properties of SiGe materials. In this review a brief overview of the dislocation mechanisms in the SiGe system is given. The method of choice for dislocation characterization is transmission electron microscopy. In particular, the article provides a detailed introduction into large-angle convergent-beam electron diffraction, and gives an overview of different application examples of this method on SiGe structures and related systems.

Convergent Beam Electron Diffraction and Transmission Electron Microscopy Study of Interfacial Defects in Gallium Nitride Homoepitaxial Films

1997 ◽  
Vol 3 (5) ◽  
pp. 436-442 ◽  
Author(s):  
Z. Liliental-Weber ◽  
Jack Washburn ◽  
K. Pakula ◽  
J. Baranowski
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Microscopy Study ◽  
Convergent Beam Electron Diffraction ◽  
Electron Microscopy Study ◽  
Transmission Electron Microscopy Study ◽  
Beam Electron ◽  
Transmission Electron ◽  
Interfacial Defects ◽  
Convergent Beam

Convergent Beam Electron Diffraction and Transmission Electron Microscopy Study of Interfacial Defects in Gallium Nitride Homoepitaxial Films

A library of convergent-beam electron diffraction patterns

1986 ◽  
Vol 44 ◽  
pp. 688-691
Author(s):  
John F. Mansfield
Keyword(s):  
Electron Diffraction ◽  
Materials Science ◽  
Convergent Beam Electron Diffraction ◽  
Beam Electron ◽  
Transmission Electron ◽  
Yield Information ◽  
Analytical Electron ◽  
Diffraction Patterns ◽  
Convergent Beam ◽  
Electron Energy Loss

One of the most important advancements of the transmission electron microscopy (TEM) in recent years has been the development of the analytical electron microscope (AEM). The microanalytical capabilities of AEMs are based on the three major techniques that have been refined in the last decade or so, namely, Convergent Beam Electron Diffraction (CBED), X-ray Energy Dispersive Spectroscopy (XEDS) and Electron Energy Loss Spectroscopy (EELS). Each of these techniques can yield information on the specimen under study that is not obtainable by any other means. However, it is when they are used in concert that they are most powerful. The application of CBED in materials science is not restricted to microanalysis. However, this is the area where it is most frequently employed. It is used specifically to the identification of the lattice-type, point and space group of phases present within a sample. The addition of chemical/elemental information from XEDS or EELS spectra to the diffraction data usually allows unique identification of a phase.

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