Insecticidal Control of Banded Sunflower Moth, Cochylis hospes (Lepidoptera: Cochylidae), Larvae at Different Sunflower Growth Stages and Dates of Planting in North Dakota1

1986 ◽  
Vol 79 (3) ◽  
pp. 648-650 ◽  
Author(s):  
Laurence D. Charlet ◽  
John D. Busacca
Keyword(s):  
Growth Stages ◽  
Cochylis Hospes ◽  
Sunflower Moth

Cochylis hospes (Lepidoptera: Tortricidae) damage to male lines varies significantly and inbred susceptibility predicts damage to hybrids

2019 ◽  
Vol 151 (6) ◽  
pp. 817-823 ◽  
Author(s):  
Jarrad R. Prasifka
Keyword(s):  
North America ◽  
Predictive Power ◽  
Primary Source ◽  
Field Trials ◽  
Inbred Lines ◽  
Insect Damage ◽  
Seed Damage ◽  
Damage Data ◽  
Cochylis Hospes ◽  
Sunflower Moth

AbstractLarvae of Cochylis hospes (Walsingham) (Lepidoptera: Tortricidae) (banded sunflower moth) are a primary source of insect damage to seeds of cultivated sunflower, Helianthus annuus Linnaeus (Asteraceae), in North America. Field trials were used to evaluate seed damage under natural infestations for panels of publicly released male lines, publicly derived hybrids (females crossed to one common male parent), and commercial hybrids over a total of four years. For trials in 2013–2014 including 17 male lines, seed damage ranged from 3% to 19%. The least damaged male, RHA 266, was statistically similar to one other male, RHA 455. Three commercial hybrids used as checks also received very little seed damage (< 5%). In trials during 2016–2017, hybrids created by pollinating 15 different female lines with RHA 266 showed 4–14% damage. Data from female parents explained about 28% of variation in seed damage for the hybrids. Results confirm cultivated sunflower has greater variation in susceptibility to C. hospes than previously believed, and that seed damage to inbred lines provides some predictive power for hybrids. Though breeding for resistance to C. hospes seems possible, it may be too labour-intensive without relating resistance to more easily measurable traits or genetic markers.

Neuron-glia relationship during the early postembryonic development of the nervous system in some oligochaetes

1978 ◽  
Vol 36 (2) ◽  
pp. 600-601
Author(s):  
Wiktor Djaczenko ◽  
Carmen Calenda Cimmino
Keyword(s):  
Nervous System ◽  
Glial Cells ◽  
Early Period ◽  
Postembryonic Development ◽  
Ruthenium Red ◽  
The Body ◽  
Tubifex Tubifex ◽  
Growth Stages ◽  
Cell Processes ◽  
Cytoplasmic Processes

The simplicity of the developing nervous system of oligochaetes makes of it an excellent model for the study of the relationships between glia and neurons. In the present communication we describe the relationships between glia and neurons in the early periods of post-embryonic development in some species of oligochaetes.Tubifex tubifex (Mull. ) and Octolasium complanatum (Dugès) specimens starting from 0. 3 mm of body length were collected from laboratory cultures divided into three groups each group fixed separately by one of the following methods: (a) 4% glutaraldehyde and 1% acrolein fixation followed by osmium tetroxide, (b) TAPO technique, (c) ruthenium red method.Our observations concern the early period of the postembryonic development of the nervous system in oligochaetes. During this period neurons occupy fixed positions in the body the only observable change being the increase in volume of their perikaryons. Perikaryons of glial cells were located at some distance from neurons. Long cytoplasmic processes of glial cells tended to approach the neurons. The superimposed contours of glial cell processes designed from electron micrographs, taken at the same magnification, typical for five successive growth stages of the nervous system of Octolasium complanatum are shown in Fig. 1. Neuron is designed symbolically to facilitate the understanding of the kinetics of the growth process.

Characterisation of multilayer materials using a position-sensitive atom probe

1990 ◽  
Vol 48 (4) ◽  
pp. 624-625
Author(s):  
RAD Mackenzie ◽  
G D W Smith ◽  
A. Cerezo ◽  
J A Liddle ◽  
CRM Grovenor ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Spatial Information ◽  
Chemical Vapour ◽  
Atom Probe ◽  
Organic Chemical ◽  
Growth Stages ◽  
Multiple Quantum ◽  
Quartz Wool ◽  
Position Sensitive

The position sensitive atom probe (POSAP), described briefly elsewhere in these proceedings, permits both chemical and spatial information in three dimensions to be recorded from a small volume of material. This technique is particularly applicable to situations where there are fine scale variations in composition present in the material under investigation. We report the application of the POSAP to the characterisation of semiconductor multiple quantum wells and metallic multilayers.The application of devices prepared from quantum well materials depends on the ability to accurately control both the quantum well composition and the quality of the interfaces between the well and barrier layers. A series of metal organic chemical vapour deposition (MOCVD) grown GaInAs-InP quantum wells were examined after being prepared under three different growth conditions. These samples were observed using the POSAP in order to study both the composition of the wells and the interface morphology. The first set of wells examined were prepared in a conventional reactor to which a quartz wool baffle had been added to promote gas intermixing. The effect of this was to hold a volume of gas within the chamber between growth stages, leading to a structure where the wells had a composition of GalnAsP lattice matched to the InP barriers, and where the interfaces were very indistinct. A POSAP image showing a well in this sample is shown in figure 1. The second set of wells were grown in the same reactor but with the quartz wool baffle removed. This set of wells were much better defined, as can be seen in figure 2, and the wells were much closer to the intended composition, but still with measurable levels of phosphorus. The final set of wells examined were prepared in a reactor where the design had the effect of minimizing the recirculating volume of gas. In this case there was again further improvement in the well quality. It also appears that the left hand side of the well in figure 2 is more abrupt than the right hand side, indicating that the switchover at this interface from barrier to well growth is more abrupt than the switchover at the other interface.

Cytokinins from terminal buds of Euphoria longana during different growth stages

1997 ◽  
Vol 99 (1) ◽  
pp. 185-189
Author(s):  
Wen-Shaw Chen ◽  
Kuang-Liang Huang ◽  
Hsiao-Ching Yu
Keyword(s):  
Growth Stages ◽  
Terminal Buds ◽  
Different Growth Stages

Effect of high‐temperature AlN buffer on anisotropy of semi‐polar (11‐22) GaN with two pressure growth stages

2019 ◽  
Vol 14 (9) ◽  
pp. 972-975
Author(s):  
Jun Han ◽  
Fengfeng Shi ◽  
Yanhui Xing ◽  
Peiyuan Wan ◽  
Zhiyuan Gao ◽  
...  
Keyword(s):  
High Temperature ◽  
Growth Stages ◽  
Aln Buffer
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