Effect of high‐temperature AlN buffer on anisotropy of semi‐polar (11‐22) GaN with two pressure growth stages

2019 ◽  
Vol 14 (9) ◽  
pp. 972-975
Author(s):  
Jun Han ◽  
Fengfeng Shi ◽  
Yanhui Xing ◽  
Peiyuan Wan ◽  
Zhiyuan Gao ◽  
...  
Keyword(s):  
High Temperature ◽  
Growth Stages ◽  
Aln Buffer

Growth and characterization of GaN films on Si(111) substrate using high-temperature AlN buffer layer

2005 ◽  
Vol 198 (1-3) ◽  
pp. 350-353 ◽  
Author(s):  
Xianfeng Ni ◽  
Liping Zhu ◽  
Zhizhen Ye ◽  
Zhe Zhao ◽  
Haiping Tang ◽  
...  
Keyword(s):  
High Temperature ◽  
Buffer Layer ◽  
Aln Buffer

Environment and Bromoxynil Phytotoxicity

Weed Science ◽  
1986 ◽  
Vol 34 (1) ◽  
pp. 101-105 ◽  
Author(s):  
John D. Nalewaja ◽  
Grzegorz Skrzypczak
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Low Temperatures ◽  
Practical Importance ◽  
Amaranthus Retroflexus ◽  
Controlled Environment ◽  
Growth Stages ◽  
Redroot Pigweed ◽  
Wild Mustard ◽  
Simulated Rain

Experiments in controlled-environment chambers indicated that high temperature, 30 C, increased the phytotoxicity of bromoxynil (3,5-dibromo-4-hydroxybenzonitrile) to wild mustard (Sinapis arvensisL. # SINAR) and redroot pigweed (Amaranthus retroflexusL. # AMARE) compared to low temperature, 10 C, during and after treatment. Bromoxynil phytotoxicity generally was higher at relative humidities of 90 to 95% compared to 40 to 60%, but relative humidity had less influence on bromoxynil phytotoxicity than did temperature. A simulated rain immediately after bromoxynil treatment reduced control of both species, but the reduction was of no practical importance for wild mustard. The data indicate that wild mustard and redroot pigweed control would be reduced by bromoxynil application during a period of low temperatures or to plants in advanced growth stages.

High-Resolution TEM Observation of AlN/GaN Grown on Si Substrates

2011 ◽  
Vol 110-116 ◽  
pp. 991-996
Author(s):  
Lee Siang Chuah ◽  
A. Mahyudin ◽  
Z. Hasan ◽  
C.W. Chin
Keyword(s):  
High Temperature ◽  
High Resolution ◽  
Growth Dynamics ◽  
High Energy ◽  
Ex Situ ◽  
Rf Plasma ◽  
Si Substrates ◽  
Cap Layer ◽  
High Resolution Tem ◽  
Aln Buffer

A high-quality crack-free AlN cap layer on GaN layer has been achieved using an AlN buffer layer directly grown on a silicon substrate at high temperature by radio frequency (RF) plasma-assisted molecular beam epitaxy. A two dimensional (2D) growth process guide to AlN cap layer of high grade crystal quality. The nucleation and the growth dynamics have been studied by in situ reflection high energy electron diffraction (RHEED) and ex situ by high resolution transmission electron microscopy (HR-TEM). The microstructure was investigated by energy-dispersive X-ray spectroscopy (EDX). It was disclosed that AlN is single crystalline with low defect. High densities of V-shaped pits were not detected at the interface between AlN and GaN layers. Contradictory the earlier reported V-shaped defects in nitride-based alloys; these V-shaped pits were condensed on top of the AlN layer because of H2 etching of the surface when a high temperature growth discontinuity between AlN and GaN layers.

scholarly journals Probability of Low Temperature Stress at Different Growth Stages of Boro Rice

2016 ◽  
Vol 19 (2) ◽  
pp. 19-27 ◽  
Author(s):  
MS Kabir ◽  
M Howlader ◽  
JK Biswas ◽  
MAA Mahbub ◽  
M Nur E Elahi
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Short Duration ◽  
Rice Crop ◽  
Growth And Yield ◽  
Maximum Temperature ◽  
Growth Stages ◽  
Growth Duration ◽  
Long Duration ◽  
Boro Rice

CORRECTION: Due to a number of formatting and layout issues, the PDF of this paper was replaced on 10th October 2016.The most sensitive stages of Boro rice against the low temperature are agronomic panicle initiation (API), reduction division (RD) and flowering/anthesis. The critical low temperature is growth stage specific. The time and intensity of the critical low temperature during Boro season has a direct impact on the growth and yield of a crop. Therefore, it is necessary to understand the probability of the critical low temperature with respect to the growth stages to have a good planning for safe harvest. Long term weekly low temperature data have been used to estimate the probability of falling low temperature on those stages and the return period was computed. The growth durations of 1- and 30- November seeded Boro rice crop from 45-day-old seedling of BRRI dhan28 (short duration) and BRRI dhan29 (long duration) are considered to observe the probability. A Boro crop encountering critical low temperature is appeared to suffer from cool injury. The extent of cool injury depends on the nature and duration of low temperature and diurnal change of low (night) and high (day) temperature. The critical low temperature for a rice crop at API, RD and anthesis are 18, 19 and 22°C, respectively. Boro rice is grown between November and May. The low temperature occurs from October to early March. There is, therefore, the probability of low temperature occurrence from the crop establishment to the flowering stage is a great concern. The probability of experiencing stage-wise critical temperature approaches to 100% for early established and short duration crop. However, the late established and long duration crop has the probability little less than the early and short duration crop. In a study it has been observed that short duration BRRI dhan28 having 64.6% sterility to yield 2.5 t ha-1 and BRRI dhan29, 40.8% sterility to yield 6.5 t ha-1. The percentages of corresponding sterility for late established crops were 35.9 and 32.8%. Irrespective of growth duration, the yield is affected a little of the late established crop. Despite low temperature along with the reproductive phase, the late established crop is quite safe due to the parallel high (day) temperature (31-35°C). The high maximum temperature appears to play an important role through the alleviating effect of low temperature. But for early-established particularly short duration variety could not escape the low temperature at some of its sensitive growth stages as the high temperature appears to stay a several degree low (27-29°C) at that time. The low level of high temperature is appeared to drag down the low temperature to aggravate the growth and development of a crop. Therefore, not only the variation of high temperature of the day but also the variation of critical low temperature might have some role in alleviating effect of cool-injury. The periodic return of critical low temperature (10-15°C) during the reproductive stage may occur every year or every alternate year depending on the time across the cropping season and the region as well. Therefore, the critical low temperature, the high temperature during the low temperature period, periodic return of the critical low temperature with respect to growing region and concerned factors should be a consideration for planning a Boro crop.Bangladesh Rice j. 2015, 19(2): 19-27

Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer

2001 ◽  
Vol 230 (3-4) ◽  
pp. 381-386 ◽  
Author(s):  
T. Paskova ◽  
E. Valcheva ◽  
J. Birch ◽  
S. Tungasmita ◽  
P.-O.Å. Persson ◽  
...  
Keyword(s):  
High Temperature ◽  
Stress Relaxation ◽  
Aln Buffer

Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(111) substrate

2004 ◽  
Vol 263 (1-4) ◽  
pp. 4-11 ◽  
Author(s):  
Yuan Lu ◽  
Xianglin Liu ◽  
Xiaohui Wang ◽  
Da-Cheng Lu ◽  
Dabing Li ◽  
...  
Keyword(s):  
High Temperature ◽  
Growth Temperature ◽  
Aln Buffer

GaN thin films deposited via organometallic vapor phase epitaxy on α(6H)–SiC(0001) using high‐temperature monocrystalline AlN buffer layers

1995 ◽  
Vol 67 (3) ◽  
pp. 401-403 ◽  
Author(s):  
T. Warren Weeks ◽  
Michael D. Bremser ◽  
K. Shawn Ailey ◽  
Eric Carlson ◽  
William G. Perry ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Buffer Layers ◽  
Organometallic Vapor Phase Epitaxy ◽  
Aln Buffer
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