The isotropy constant and boundary properties of convex bodies

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

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Convex Bodies: The Brunn–Minkowski Theory

10.1017/cbo9780511526282 ◽

1993 ◽

Cited By ~ 891

Author(s):

Rolf Schneider

Keyword(s):

Convex Bodies

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Sintering and Grain Boundary Properties of ZnO-Bi2O3-Sb2O3-Mn3O4-NiO Varistors

Korean Journal of Metals and Materials ◽

10.3365/kjmm.2013.51.5.363 ◽

2013 ◽

Vol 51 (5) ◽

pp. 363-369

Author(s):

Youn-Woo Hong ◽

Young-Jin Lee ◽

Sei-Ki Kim ◽

Jin-Ho Kim

Keyword(s):

Grain Boundary ◽

Boundary Properties

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Excess entropy of the systems of molecules differing in size and shape

Collection of Czechoslovak Chemical Communications ◽

10.1135/cccc19830192 ◽

1983 ◽

Vol 48 (1) ◽

pp. 192-198 ◽

Cited By ~ 5

Author(s):

Tomáš Boublík

Keyword(s):

Equation Of State ◽

Hard Spheres ◽

Excess Entropy ◽

Convex Bodies ◽

Pure Substance ◽

Liquid Equilibrium ◽

Simple Rules ◽

Different Shapes ◽

The Mean

The excess entropy of mixing of mixtures of hard spheres and spherocylinders is determined from an equation of state of hard convex bodies. The obtained dependence of excess entropy on composition was used to find the accuracy of determining ΔSE from relations employed for the correlation and prediction of vapour-liquid equilibrium. Simple rules were proposed for establishing the mean parameter of nonsphericity for mixtures of hard bodies of different shapes allowing to describe the P-V-T behaviour of solutions in terms of the equation of state fo pure substance. The determination of ΔSE by means of these rules is discussed.

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Some Hermite–Hadamard type integral inequalities for convex functions defined on convex bodies in ℝn\mathbb{R}^{n}

Journal of Applied Analysis ◽

10.1515/jaa-2020-2005 ◽

2020 ◽

Vol 26 (1) ◽

pp. 67-77 ◽

Cited By ~ 1

Author(s):

Silvestru Sever Dragomir

Keyword(s):

Euclidean Space ◽

Convex Functions ◽

Convex Bodies ◽

Integral Inequalities ◽

Divergence Theorem ◽

Several Variables ◽

Type Integral ◽

Bounded Convex

AbstractIn this paper, by the use of the divergence theorem, we establish some integral inequalities of Hermite–Hadamard type for convex functions of several variables defined on closed and bounded convex bodies in the Euclidean space {\mathbb{R}^{n}} for any {n\geq 2}.

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Light Effects on Grain Boundary Properties in Silicon

MRS Proceedings ◽

10.1557/proc-5-105 ◽

1981 ◽

Vol 5 ◽

Author(s):

L. J. Cheng ◽

C. M. Shyu

Keyword(s):

Experimental Data ◽

Grain Boundary ◽

Minority Carrier ◽

State Density ◽

Boundary State ◽

Carrier Recombination ◽

Boundary Properties ◽

Light Effects ◽

Recombination Velocity ◽

P Type

ABSTRACTWe have studied the photoconductivity of grain boundaries in p–type silicon. The result demonstrates the applicability of the technique for the measurement of minority carrier recombination velocity at the grain boundary. The experimental data are consistent with the thought that the recombination velocity increases with the boundary state density and light intensity.

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