Raman and Infrared Emission Spectra of Hydrogenated Amorphous Carbon: Insight into the Origin of the 6-14 Micron Infrared Emission Bands

2005 ◽  
Vol 620 (2) ◽  
pp. L135-L138 ◽  
Author(s):  
W. W. Duley ◽  
S. Lazarev ◽  
A. Scott
Keyword(s):  
Amorphous Carbon ◽  
Emission Spectra ◽  
Infrared Emission ◽  
Hydrogenated Amorphous Carbon ◽  
Hydrogenated Amorphous ◽  
Insight Into

Infrared Emission Spectra from Hydrogenated Amorphous Carbon

1997 ◽  
Vol 490 (2) ◽  
pp. L175-L177 ◽  
Author(s):  
A. D. Scott ◽  
W. W. Duley ◽  
H. R. Jahani
Keyword(s):  
Amorphous Carbon ◽  
Emission Spectra ◽  
Infrared Emission ◽  
Hydrogenated Amorphous Carbon ◽  
Hydrogenated Amorphous

NITROGEN INCORPORATED HYDROGENATED AMORPHOUS CARBON THIN FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Hydrogenated Amorphous Carbon ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.

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