Bias Properties of Extragalactic Distance Indicators. IX. Absolute Luminosity and Line‐Width Distributions for Galaxy Types along the Hubble Sequence Based on Distance‐limited Samples from the Revised Shapley‐Ames Catalog

2000 ◽  
Vol 112 (770) ◽  
pp. 504-528 ◽  
Author(s):  
Allan Sandage
Keyword(s):  
Line Width ◽  
Hubble Sequence ◽  
Distance Indicators ◽  
Absolute Luminosity

scholarly journals Unbiased Multi-Parametric Estimations of Distances and Peculiar Velocities of the Galaxies

1994 ◽  
Vol 161 ◽  
pp. 715-717
Author(s):  
T.B. Georgiev
Keyword(s):  
Regression Analysis ◽  
Line Width ◽  
Surface Brightness ◽  
Spiral Galaxies ◽  
Axial Ratio ◽  
Major Axis ◽  
Peculiar Velocities ◽  
Line Widths ◽  
Velocity Dispersions ◽  
Distance Indicators

Accurate estimates of distances and peculiar velocities for galaxies may be derived with the help of multi-dimensional regression analysis using two or more distance indicators p k (corrected apparent sizes, luminosities, other distance-dependent quantities) and some calibrators q 1 (velocity dispersions of the ellipticals or HI-line widths of the spirals, mean surface brightness, colours, other distance-independent quantities) together, cf. Georgiev (1992). Here an example is given for 349 spiral galaxies with axial ratio D/d > 1.4 from the sample of Fisher & Tully (1981). The p-values are the major axis and the blue magnitude and the q-values are the HI line width, type and axial ratio.

Magellanic Cloud Eclipsing Binaries: Primary Distance Indicators

1999 ◽  
Vol 190 ◽  
pp. 563-566
Author(s):  
J. D. Pritchard ◽  
W. Tobin ◽  
J. V. Clausen ◽  
E. F. Guinan ◽  
E. L. Fitzpatrick ◽  
...  
Keyword(s):  
New Zealand ◽  
Magellanic Cloud ◽  
Eclipsing Binaries ◽  
Fundamental Parameters ◽  
Distance Indicators

Our collaboration involves groups in Denmark, the U.S.A. Spain and of course New Zealand. Combining ground-based and satellite (IUEandHST) observations we aim to determine accurate and precise stellar fundamental parameters for the components of Magellanic Cloud Eclipsing Binaries as well as the distances to these systems and hence the parent galaxies themselves. This poster presents our latest progress.

On The Radii of Ap Stars

1976 ◽  
Vol 32 ◽  
pp. 49-55 ◽  
Author(s):  
F.A. Catalano ◽  
G. Strazzulla
Keyword(s):  
Observational Data ◽  
Line Width ◽  
Main Sequence ◽  
Main Sequence Stars ◽  
Ap Stars

SummaryFrom the analysis of the observational data of about 100 Ap stars, the radii have been computed under the assumption that Ap are main sequence stars. Radii range from 1.4 to 4.9 solar units. These values are all compatible with the Deutsch's period versus line-width relation.

LVSEM: Past Present and Future

1990 ◽  
Vol 48 (1) ◽  
pp. 364-365
Author(s):  
James B. Pawley
Keyword(s):  
Field Emission ◽  
Line Width ◽  
Time Scales ◽  
Silicon Oxide ◽  
Beam Current ◽  
High Brightness ◽  
High Beam ◽  
Fixed Charges ◽  
Beam Voltage ◽  
Deposited Metal

Past: In 1960 Thornley published the first description of SEM studies carried out at low beam voltage (LVSEM, 1-5 kV). The aim was to reduce charging on insulators but increased contrast and difficulties with low beam current and frozen biological specimens were also noted. These disadvantages prevented widespread use of LVSEM except by a few enthusiasts such as Boyde. An exception was its use in connection with studies in which biological specimens were dissected in the SEM as this process destroyed the conducting films and produced charging unless LVSEM was used.In the 1980’s field emission (FE) SEM’s came into more common use. The high brightness and smaller energy spread characteristic of the FE-SEM’s greatly reduced the practical resolution penalty associated with LVSEM and the number of investigators taking advantage of the technique rapidly expanded; led by those studying semiconductors. In semiconductor research, the SEM is used to measure the line-width of the deposited metal conductors and of the features of the photo-resist used to form them. In addition, the SEM is used to measure the surface potentials of operating circuits with sub-micrometer resolution and on pico-second time scales. Because high beam voltages destroy semiconductors by injecting fixed charges into silicon oxide insulators, these studies must be performed using LVSEM where the beam does not penetrate so far.

SIZE DEPENDENT FMR LINE-SHIFT AND LINE-WIDTH STUDIES IN POLYCRYSTALLINE FERRITES AND GARNETS

1977 ◽  
Vol 38 (C1) ◽  
pp. C1-267-C1-269 ◽  
Author(s):  
C. M. SRIVASTAVA ◽  
M. J. PATNI ◽  
N. G. NANADIKAR
Keyword(s):  
Line Width ◽  
Line Shift ◽  
Size Dependent

Performance and Reliability of a MEMS-based tunable optical filter operating in the 1565 nm-1525 nm wavelength range

2002 ◽  
Vol 722 ◽  
Author(s):  
T. S. Sriram ◽  
B. Strauss ◽  
S. Pappas ◽  
A. Baliga ◽  
A. Jean ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Line Width ◽  
Insertion Loss ◽  
Optical Filter ◽  
Single Mode ◽  
Single Mode Fiber ◽  
Reliability Testing ◽  
Silicon Nitride Membrane ◽  
Tunable Optical Filter ◽  
Extensive Performance

AbstractThis paper describes the results of extensive performance and reliability characterization of a silicon-based surface micro-machined tunable optical filter. The device comprises a high-finesse Fabry-Perot etalon with one flat and one curved dielectric mirror. The curved mirror is mounted on an electrostatically actuated silicon nitride membrane tethered to the substrate using silicon nitride posts. A voltage applied to the membrane allows the device to be tuned by adjusting the length of the cavity. The device is coupled optically to an input and an output single mode fiber inside a hermetic package. Extensive performance characterization (over operating temperature range) was performed on the packaged device. Parameters characterized included tuning characteristics, insertion loss, filter line-width and side mode suppression ratio. Reliability testing was performed by subjecting the MEMS structure to a very large number of actuations at an elevated temperature both inside the package and on a test board. The MEMS structure was found to be extremely robust, running trillions of actuations without failures. Package level reliability testing conforming to Telcordia standards indicated that key device parameters including insertion loss, filter line-width and tuning characteristics did not change measurably over the duration of the test.

Dual Damascene Process for FatWires in Copper/FSG Technology

2003 ◽  
Vol 766 ◽  
Author(s):  
J. Gambino ◽  
T. Stamper ◽  
H. Trombley ◽  
S. Luce ◽  
F. Allen ◽  
...  
Keyword(s):  
Line Width ◽  
Lower Cost ◽  
Process Window ◽  
Cmos Process ◽  
Dual Damascene ◽  
Damascene Process ◽  
Interconnect Technology

AbstractA trench-first dual damascene process has been developed for fat wires (1.26 μm pitch, 1.1 μm thickness) in a 0.18 μm CMOS process with copper/fluorosilicate glass (FSG) interconnect technology. The process window for the patterning of vias in such deep trenches depends on the trench depth and on the line width of the trench, with the worse case being an intermediate line width (lines that are 3X the via diameter). Compared to a single damascene process, the dual damascene process has comparable yield and reliability, with lower via resistance and lower cost.

AlCu Pattern Generation on 3D StructuredWafer Using Multi Level Exposure Method on Electrodeposited Polymer Material

2003 ◽  
Vol 766 ◽  
Author(s):  
Vineet Sharma ◽  
Arief B. Suriadi ◽  
Frank Berauer ◽  
Laurie S. Mittelstadt
Keyword(s):  
Line Width ◽  
Metal Film ◽  
Focal Depth ◽  
Cost Effective ◽  
Pattern Generation ◽  
Promising Technique ◽  
Critical Dimensions ◽  
Exposure Method ◽  
Multi Level ◽  
3D Surfaces

AbstractNormal photolithography tools have focal depth limitations and are unable to meet the expectations of high resolution photolithography on highly topographic structures. This paper shows a cost effective and promising technique of combining two different approaches to achieve critical dimensions of traces on slope pattern continuity on highly topographic structures. Electrophoretically deposited photoresist is used on 3-D structured wafers. This photoresist coating technique is fairly known in the MEMS industries to achieve uniform and conformal photoresist films on 3D surfaces. Multi step exposures are used to expose electrophoretically deposited photoresist. AlCu (Cu-0.5%), 0.47-0.53 μm thick metal film is deposited on 3D structured silicon substrate to plate photoresist. By combining these two novel methods, metal (AlCu) traces of 75 μm line width and 150 μm pitch (from top flat to down the slope) have been demonstrated on isotropically etched 350 μm deep trenches with 5-10% line width loss.

Latch-Up Induced Slit Voiding in Aluminum Metal Lines

1999 ◽  
Author(s):  
Chunyu Zhang ◽  
Lakshmi Vedula ◽  
Shekhar Khandekar
Keyword(s):  
High Temperature ◽  
Line Width ◽  
Fold Increase ◽  
Metal Line ◽  
Operating Life ◽  
Mixed Signal ◽  
Aluminum Metal ◽  
Temperature Operating ◽  
Latch Up

Abstract Latch-up induced during High Temperature Operating Life (HTOL) test of a mixed signal device fabricated with 1.0 μm CMOS, double poly, double metal process caused failures due to an open in aluminum metal line. Metal lines revealed wedge voids of about 50% of the line width. Triggering of latch up mechanism during the HTOL test resulted in a several fold increase of current flowing through the ground metal line. This increase in current resulted in the growth of the wedge voids leading to failures due to open metal lines.

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