Growth of Hafnium Oxide Films by Metalorganic Chemical Vapor Deposition Using Oxygen-Free Hf[N(C2H5)2]4 Precursor and Their Properties

2003 ◽  
Vol 57 (1) ◽  
pp. 1185-1192
Author(s):  
K. Takahashi ◽  
M. Nakayama ◽  
S. Hino ◽  
E. Tokumitsu ◽  
H. Funakubo
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Hafnium Oxide ◽  
Metalorganic Chemical Vapor Deposition ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Metalorganic Chemical

Effect of deposition temperature on the characteristics of hafnium oxide films deposited by metalorganic chemical vapor deposition using amide precursor

2004 ◽  
Vol 19 (2) ◽  
pp. 584-589 ◽  
Author(s):  
Kenji Takahashi ◽  
Hiroshi Funakubo ◽  
Shiro Hino ◽  
Makoto Nakayama ◽  
Naoki Ohashi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Hafnium Oxide ◽  
Deposition Temperature ◽  
Metalorganic Chemical Vapor Deposition ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Metalorganic Chemical

Hafnium oxide films were deposited on silicon substrates at deposition temperatures ranging from 190 to 500 °C by metalorganic chemical vapor deposition using an amide precursor, Hf[N(C2H5)2]4, and O2 as source materials. The effect of deposition temperature on the deposition characteristics and electrical properties of the resultant films were investigated. Reaction-limited deposition of hafnium oxide films occurred at deposition temperatures under 380 °C. Concentration of residues, such as carbon, nitrogen, and hydrogen, monotonously decreased with increasing deposition temperature, with nitrogen being the most thermally susceptible. However, surface roughness reached a minimum value at 400 °C. Amorphous films were obtained for deposition temperatures up to 450 °C, but obviously became crystallized at 500 °C. Accumulation capacitance increased with increasing deposition temperature but saturated above 400 °C. Moreover, postdeposition annealing at 800 °C caused no obvious degradation in the electrical properties of the film deposited at 400 °C.

NaCl-Type Oxide Films Prepared by Plasma-Enhanced Metalorganic Chemical Vapor Deposition

1993 ◽  
Vol 32 (Part 2, No. 10A) ◽  
pp. L1448-L1450 ◽  
Author(s):  
Eiji Fujii ◽  
Atsushi Tomozawa ◽  
Satoru Fujii ◽  
Hideo Torii ◽  
Masumi Hattori ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Metalorganic Chemical
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