Simulation of the Charge Transport Across Grain Boundaries in p-Type SrTiO 3 Ceramics

2002 ◽  
Vol 268 (1) ◽  
pp. 215-220
Author(s):  
Th. Hölbling ◽  
R. Waser
Keyword(s):  
Charge Transport ◽  
Grain Boundaries ◽  
P Type

scholarly journals Optimal n-Type Al-Doped ZnO Overlayers for Charge Transport Enhancement in p-Type Cu2O Photocathodes

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 338
Author(s):  
Hak Hyeon Lee ◽  
Dong Su Kim ◽  
Ji Hoon Choi ◽  
Young Been Kim ◽  
Sung Hyeon Jung ◽  
...  
Keyword(s):  
Charge Transport ◽  
Atomic Layer ◽  
Absorption Efficiency ◽  
Open Circuit ◽  
Band Alignment ◽  
Conformal Coating ◽  
Layer Deposition ◽  
Layer Stacking ◽  
Doped Zno ◽  
P Type

An effective strategy for improving the charge transport efficiency of p-type Cu2O photocathodes is the use of counter n-type semiconductors with a proper band alignment, preferably using Al-doped ZnO (AZO). Atomic layer deposition (ALD)-prepared AZO films show an increase in the built-in potential at the Cu2O/AZO interface as well as an excellent conformal coating with a thin thickness on irregular Cu2O. Considering the thin thickness of the AZO overlayers, it is expected that the composition of the Al and the layer stacking sequence in the ALD process will significantly influence the charge transport behavior and the photoelectrochemical (PEC) performance. We designed various stacking orders of AZO overlayers where the stacking layers consisted of Al2O3 (or Al) and ZnO using the atomically controlled ALD process. Al doping in ZnO results in a wide bandgap and does not degrade the absorption efficiency of Cu2O. The best PEC performance was obtained for the sample with an AZO overlayer containing conductive Al layers in the bottom and top regions. The Cu2O/AZO/TiO2/Pt photoelectrode with this overlayer exhibits an open circuit potential of 0.63 V and maintains a high cathodic photocurrent value of approximately −3.2 mA cm−2 at 0 VRHE for over 100 min.

scholarly journals Charge transport mechanism in copper phthalocyanine thin films with and without traps

RSC Advances ◽  
2017 ◽  
Vol 7 (86) ◽  
pp. 54911-54919 ◽  
Author(s):  
Varsha Rani ◽  
Akanksha Sharma ◽  
Pramod Kumar ◽  
Budhi Singh ◽  
Subhasis Ghosh
Keyword(s):  
Thin Films ◽  
Charge Transport ◽  
Grain Boundaries ◽  
Transport Mechanism ◽  
Copper Phthalocyanine ◽  
Organic Thin Films ◽  
Interface States ◽  
Charge Transport Mechanism ◽  
Density Of Interface States

We investigate the charge transport mechanism in copper phthalocyanine thin films with and without traps. We find that the density of interface states at the grain boundaries can decide the mechanism of charge transport in organic thin films.

scholarly journals Polymer Charge Transport: Charge-Transport Anisotropy Due to Grain Boundaries in Directionally Crystallized Thin Films of Regioregular Poly(3-hexylthiophene) (Adv. Mater. 16/2009)

2009 ◽  
Vol 21 (16) ◽  
pp. NA-NA
Author(s):  
Leslie H. Jimison ◽  
Michael F. Toney ◽  
Iain McCulloch ◽  
Martin Heeney ◽  
Alberto Salleo
Keyword(s):  
Thin Films ◽  
Charge Transport ◽  
Grain Boundaries ◽  
Regioregular Poly

Coupled polaron-electron charge transport in graphite functionalized polyaniline on cellulose: Metal free flexible p-type semiconductor

2018 ◽  
Vol 245 ◽  
pp. 96-101 ◽  
Author(s):  
Krishna Deb ◽  
Kamanashis Sarkar ◽  
Arun Bera ◽  
Ajit Debnath ◽  
Biswajit Saha
Keyword(s):  
Charge Transport ◽  
Electron Charge ◽  
Metal Free ◽  
Type Semiconductor ◽  
P Type

Effect of Grain Boundaries on Charge Transport in Methylammonium Lead Iodide Perovskite Thin Films

2019 ◽  
Vol 123 (9) ◽  
pp. 5321-5325 ◽  
Author(s):  
Hamidreza Khassaf ◽  
Srinivas K. Yadavalli ◽  
Yuanyuan Zhou ◽  
Nitin P. Padture ◽  
Angus I. Kingon
Keyword(s):  
Thin Films ◽  
Charge Transport ◽  
Grain Boundaries ◽  
Lead Iodide ◽  
Methylammonium Lead Iodide

Microstructure Investigation of Non-equilibrium Synthesized Filled Skutterudite CeFe4Sb12

2010 ◽  
Vol 1267 ◽  
Author(s):  
Juan Zhou ◽  
Qing Jie ◽  
Qiang Li
Keyword(s):  
Electron Microscopy ◽  
Grain Size ◽  
Grain Boundaries ◽  
Thermoelectric Properties ◽  
Conventional Solid State Reaction ◽  
Filled Skutterudite ◽  
Filled Skutterudites ◽  
Higher Carrier Mobility ◽  
P Type ◽  
Non Equilibrium

AbstractWe have prepared a variety of filled skutterudites through non-equilibrium synthesis by converting melt-spun ribbons into single phase polycrystalline bulk under pressure. In general, better thermoelectric properties are found in these samples. In this work, we performed microstructure characterization of non-equilibrium synthesized p-type filled skutterudite CeFe4Sb12 by X-ray diffraction, scanning electron microscopy and transmission electron microscopy in order to understand the structural origin of the improved thermoelectric properties. It is found that the non-equilibrium synthesized samples have smaller grain size and cleaner grain boundaries when compared to the samples prepared by the conventional solid-state reaction plus long term annealing. While smaller grain size can help reduce the lattice thermal conductivity, cleaner grain boundaries ensure higher carrier mobility and subsequently, higher electrical conductivity at the application temperatures.

Temperature-dependent electronic charge transport characteristics at MoS2/p-type Ge heterojunctions

2018 ◽  
Vol 757 ◽  
pp. 221-227 ◽  
Author(s):  
Seung Bae Son ◽  
Yonghun Kim ◽  
Byungjin Cho ◽  
Chel-Jong Choi ◽  
Woong-Ki Hong
Keyword(s):  
Charge Transport ◽  
Electronic Charge ◽  
Temperature Dependent ◽  
P Type

scholarly journals Impact of p-type doping on charge transport in blade-coated small-molecule:polymer blend transistors

2020 ◽  
Vol 8 (43) ◽  
pp. 15368-15376
Author(s):  
Aniruddha Basu ◽  
Muhammad Rizwan Niazi ◽  
Alberto D. Scaccabarozzi ◽  
Hendrik Faber ◽  
Zuping Fei ◽  
...  
Keyword(s):  
Charge Transport ◽  
Hole Mobility ◽  
Organic Transistors ◽  
P Type ◽  
Blade Coating

Blade-coating is used to fabricate high hole mobility organic transistors based on a p-doped small-molecule:polymer blend semiconductor.

In situ growth of a P-type CuSCN/Cu2O heterojunction to enhance charge transport and suppress charge recombination

2019 ◽  
Vol 7 (23) ◽  
pp. 6872-6878 ◽  
Author(s):  
Linghui Li ◽  
Junhui Liang ◽  
Laishun Qin ◽  
Da Chen ◽  
Yuexiang Huang
Keyword(s):  
Charge Transport ◽  
Alkali Treatment ◽  
Charge Recombination ◽  
Treatment Technique ◽  
In Situ Growth ◽  
Interface Recombination ◽  
P Type

In situ growth CuSCN/Cu2O heterojunction using a simple alkali treatment technique, to promote charge transport and suppress interface recombination.

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