On the damage induced in GaP single crystals by Te ion bombardment

1973 ◽  
Vol 18 (3-4) ◽  
pp. 279-281 ◽  
Author(s):  
H. M. Naguib ◽  
W. A. Grant ◽  
G. Carter
Keyword(s):  
Single Crystals ◽  
Ion Bombardment

Sputtering Behaviour of Vanadium Silicide Single Crystals under 10 keV Kr+ Ion Bombardment

1984 ◽  
Vol 81 (1) ◽  
pp. 259-265 ◽  
Author(s):  
P. Weissbrodt ◽  
F. Storbeck ◽  
W. Hauffe
Keyword(s):  
Single Crystals ◽  
Ion Bombardment

Electron Ejection from Single Crystals Due to 1- to 10-keV Noble-Gas Ion Bombardment

1965 ◽  
Vol 139 (3A) ◽  
pp. A729-A736 ◽  
Author(s):  
C. E. Carlston ◽  
G. D. Magnuson ◽  
P. Mahadevan ◽  
D. E. Harrison
Keyword(s):  
Single Crystals ◽  
Noble Gas ◽  
Ion Bombardment ◽  
Electron Ejection

Target preparation

1969 ◽  
Vol 311 (1504) ◽  
pp. 63-73 ◽  
Keyword(s):  
Single Crystals ◽  
Surface Preparation ◽  
Ion Bombardment ◽  
Heavy Ion ◽  
Proton Scattering ◽  
Metallographic Examination ◽  
Target Preparation ◽  
Wide Range ◽  
Vacuum Apparatus ◽  
Grinding And Polishing

The requirements for the surface preparation of single crystals to be used in the measurement of heavy ion channelling, proton scattering, etc., processes which depend on the ordered nature of the lattice, are much more stringent than those for the standard metallographic examination of surfaces. This review describes the various techniques of sectioning, grinding and polishing of single crystals, illustrates the type and depth of damage introduced as a consequence of these techniques and shows how this damage may best be removed. The mounting of prepared targets in vacuum apparatus, in a manner suitable for measurement of channelling effects over a wide range of temperature is described and illustration is made of the effect of disordered surfaces, due to oxidation or to ion bombardment, on the measured yield of the channelling processes.

THE EFFECT OF CRYSTALLINITY AND BOMBARDMENT DOSE ON THE PENETRATION OF 40-keV XENON IONS IN IONIC CRYSTALS AND CERAMICS

1966 ◽  
Vol 44 (11) ◽  
pp. 2905-2914 ◽  
Author(s):  
J. L. Whitton ◽  
Hj. Matzke
Keyword(s):  
Radiation Damage ◽  
Single Crystals ◽  
Penetration Depth ◽  
Incident Beam ◽  
Ion Bombardment ◽  
Fused Silica ◽  
Ionic Crystals ◽  
Chemical Dissolution ◽  
Metal Single Crystals ◽  
Oriented Parallel

The range and depth distributions of 40-keV xenon ions in single crystals of NaCl, KBr, MgO, SiO2 (α quartz), in sintered UO2 and in fused silica, have been measured by the sectioning techniques of vibratory polishing and chemical dissolution. Channeling is observed in the single crystals when the [Formula: see text] is oriented parallel to the incident beam of the ions. This effect is similar to that previously reported for some metal single crystals. High bombardment doses produce a factor of 2–5 decrease in penetration depth in MgO and SiO2, materials which are known to be damaged by ion bombardment. This decrease is smaller in materials that do not show gross ion bombardment damage, such as NaCl, KBr, and UO2. Thus, the study of ranges is shown to be another means of detecting gross radiation damage.

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