scholarly journals Modeling and Measurement of Submicron Particles in RF Plasmas in Ar

1995 ◽  
Vol 48 (3) ◽  
pp. 439
Author(s):  
Y Hosokauia ◽  
T Kitajima ◽  
T Makabe
Keyword(s):  
Emission Spectroscopy ◽  
Continuum Model ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Particle Growth ◽  
Mie Scattering ◽  
Submicron Particles ◽  
Rf Plasma ◽  
Plasma System ◽  
Rf Plasmas

The work is focused on the growth and transport of submicron particles in nonreactive radiofrequency plasma in Ar at 13�56 MHz, studied by numerical modeling using the relaxation continuum model, and by experiment using spatiotemporally resolved optical emission spectroscopy with Mie scattering. The particle growth/decay under conditions of the initially injected (CF2)n, and the related spatiotemporal change of the rf plasma structure, are discussed in terms of their numerical and experimental results. The results give suggestions with respect to the influence of particles in a dusty rf plasma system, such as dry etching and sputtering.

Optical Emission Spectroscopy Measurement of Ar\H2\CH4 RF Plasma for Nano-Crystal Diamond Film Deposition

2014 ◽  
Vol 1035 ◽  
pp. 373-378 ◽  
Author(s):  
Yan Chao Shi ◽  
Qin Jian Zhang ◽  
Jia Jun Li ◽  
Guang Chao Chen
Keyword(s):  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Diamond Films ◽  
Optical Emission ◽  
Film Deposition ◽  
Rf Plasma ◽  
Gas Mixture ◽  
Technical Application ◽  
Plasma Enhanced Cvd ◽  
Nano Crystal

Ar\H2\CH4 gas mixture was utilized to grow nanocrystal diamond films in a RF plasma enhanced CVD system. CH4\ H2 ratios were changed to study the effect of plasma radicals on the deposit, in which optical emission spectroscopy (OES) was applied to analyze the plasma radicals. It was found that Hα, Hβ, Hγ, CH, C2 were the main radicals in the plasma. Among them, the CH intensity of OES was usually quite strong and increased sharply when the ratio of CH4/H2 was greater than 3%. The intensity of C2 was weak and basically unchanged with the addition of methane. This study can provide a new possible technical application for depositing NCD films.

A Spectroscopic Study of the Conditions Required for Plasma Etching of Aluminium in BCl3 and Cl2 Plasmas

1987 ◽  
Vol 98 ◽  
Author(s):  
J. A. Cairns ◽  
R. Smailes ◽  
D. C. W. Blaikley ◽  
P. M. Banks ◽  
G. Hancock ◽  
...  
Keyword(s):  
Steady State ◽  
Plasma Etching ◽  
Ground State ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Plasma Discharge ◽  
Rf Plasma ◽  
Rf Plasma Discharge ◽  
State Models

ABSTRACTOptical Emission Spectroscopy (OES) with argon actinometry has been used to study the influence of machine parameters on the composition of a BCl3 RF plasma discharge in the absence and presence of aluminium. Two steady state models are proposed to account for the appearance of the various species seen, and to explain their relative abundances in response to changes in power and pressure. The validity of the actinometric technique for measuring relative changes in ground state concentrations is discussed also.

Deposition of a-Ge:H in a Remote Plasma System

1990 ◽  
Vol 192 ◽  
Author(s):  
M. Heintze ◽  
C. E. Nebel ◽  
G. H. Bauer
Keyword(s):  
Fermi Level ◽  
Structural Properties ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Defect Density ◽  
Plasma Deposition ◽  
Optical Emission ◽  
Deposition Process ◽  
Remote Plasma ◽  
Plasma System

ABSTRACTThe remote plasma deposition process was studied by optical emission spectroscopy using Ne and N2 to detect He-metastables. a- Ge:H was prepared and its optoelectronic and structural properties were characterized. AM 1.5 photoconductivities around 10−6(Ωcm)−1 were obtained in intrinsic material with the Fermi level position lying near midgap. However, even in the best film the defect density is higher than 1017cm−3.

The Effects of the Addition of CF4, Cl2, and N2 TO O2 ECR Plasma on the ETCH Rate, Selectivity and Etched Profile of RuO2 Film

1997 ◽  
Vol 493 ◽  
Author(s):  
Eung-Jik Lee ◽  
Jong-Sam Kim ◽  
Jin-Woong Kim ◽  
Ki-Ho Baik ◽  
Won-Jong Lee
Keyword(s):  
Cyclotron Resonance ◽  
Emission Spectroscopy ◽  
Etch Rate ◽  
Oxygen Radicals ◽  
Optical Emission Spectroscopy ◽  
Electron Cyclotron Resonance ◽  
Optical Emission ◽  
Quadrupole Mass ◽  
Plasma System ◽  
Ecr Plasma

ABSTRACTIn this study, we investigated the effects of the addition of CF4, Cl2, and N2 gases to oxygen electron cyclotron resonance (ECR) plasma on the reactive ion etching (RIE) properties of RuO2 film such as etch rate, selectivity, and etched profile. The concentration of the etching species in the plasma was analyzed with an optical emission spectroscopy (OES) and a quadrupole mass spectrometer (QMS). The etch product was also examined with QMS.The addition of a small amount of CF4, Cl2, or N2 to the O2 plasma increases the concentration of oxygen radicals and accordingly increases the etch rate of the RUO2 films appreciably. The etch rate of the RuO2 film was enhanced more with the addition of a small amount of CF4 and CI2 than with the addition of N2. On the contrary, the etched profile obtained in O2/N2 plasma was superior, without any damaged layer at the sidewall, to O2/CF4 and O2/Cl2 plasma. The selectivity of RuO2 to Si)2 mask was over 20:1 for each of the additive gas proportion at which the etch rate was maximum for each plasma system.

Time-resolved optical emission spectroscopy of pulsed RF plasmas with copper magnetron sputtering

2008 ◽  
Vol 516 (11) ◽  
pp. 3460-3463 ◽  
Author(s):  
Namjun Kang ◽  
Junghoon Park ◽  
Soo-ghee Oh ◽  
Yongmo Kim ◽  
Jeon-geon Han
Keyword(s):  
Magnetron Sputtering ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Time Resolved ◽  
Rf Plasmas ◽  
Pulsed Rf
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