scholarly journals The Two-state Problem in Diffraction, NMR and Laser Atomic Spectroscopy

1985 ◽  
Vol 38 (3) ◽  
pp. 311
Author(s):  
AF Moodie ◽  
SW Wilkins ◽  
TJ Bastow ◽  
P Hannaford

It is pointed out that the basic mathematical structure underlying the physical techniques of (i) two-beam X-ray (or high-energy electron) diffraction from crystals, (ii) nuclear magnetic resonance (NMR) for a spin-i1/2 system and (iii) laser-induced optical transients from atoms is essentially the same. The simplicity of the formalism is such as to readily enable one to tabulate correspondences between the various physical parameters involved in the different techniques and to identify corresponding experimental configurations in many cases.

2004 ◽  
Vol 11 (02) ◽  
pp. 191-198 ◽  
Author(s):  
V. V. ATUCHIN ◽  
L. D. POKROVSKY ◽  
V. G. KESLER ◽  
N. YU. MAKLAKOVA ◽  
V. I. VORONKOVA ◽  
...  

X-ray photoemission spectroscopy (XPS) measurements have been executed for TlTiOPO 4 to elucidate the general features in the electronic structure of the KTiOPO 4 family compounds. The peculiarities of the valence band structure have been discussed for the crystals. The persistence of core level binding energy differences O 1s–P 2p and O 1s–Ti 2p 3/2 has been detected in TlTiOPO 4 and KTiOPO 4, which relates well with the constancy of averaged P – O and Ti – O chemical bond lengths in this crystal family. The superstructure ordering of the TlTiOPO 4 surface subjected to polishing and annealing has been detected by reflectance high energy electron diffraction (RHEED). From comparison of surface crystallographic properties of TlTiOPO 4 and KTiOPO 4, the most typical superstructure indices have been revealed.


1993 ◽  
Vol 312 ◽  
Author(s):  
A. H. Bensaoula ◽  
A. Freundlich ◽  
A. Bensaoula ◽  
V. Rossignol

AbstractPhosphorus exposed GaAs (100) surfaces during a Chemical Beam Epitaxy growth process are studied using in-situ Reflection High Energy Electron Diffraction and ex-situ High Resolution X-ray Diffraction. It is shown that the phosphorus exposure of a GaAs (100) surface in the 500 – 580 °C temperature range results in the formation of one GaP monolayer.


Shinku ◽  
2001 ◽  
Vol 44 (3) ◽  
pp. 135-138
Author(s):  
Takafumi SATO ◽  
Makoto KAWAMURA ◽  
Kuniaki ORIKASA ◽  
Nobuaki MINAMI ◽  
Koyu OTA ◽  
...  

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