scholarly journals Low Energy Ion?Surface Interaction ? Atomic Physics in an Ordered Atom Environment

1984 ◽  
Vol 37 (4) ◽  
pp. 389 ◽  
Author(s):  
RJ MacDonald ◽  
DJ O'Connor

Ion-surface interactions have application within a number of areas of contemporary physics research. In particular, it is essential that an understanding of the interaction between an ion and a solid surface in a fusion reactor environment be achieved. A detailed understanding of the interaction is also essential for quantitative application of several of the modern methods of surface analysis currently available. It is unfortunate that the necessary level of understanding of the interac

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
J. P. Ruf ◽  
H. Paik ◽  
N. J. Schreiber ◽  
H. P. Nair ◽  
L. Miao ◽  
...  

AbstractSuperconductivity is among the most fascinating and well-studied quantum states of matter. Despite over 100 years of research, a detailed understanding of how features of the normal-state electronic structure determine superconducting properties has remained elusive. For instance, the ability to deterministically enhance the superconducting transition temperature by design, rather than by serendipity, has been a long sought-after goal in condensed matter physics and materials science, but achieving this objective may require new tools, techniques and approaches. Here, we report the transmutation of a normal metal into a superconductor through the application of epitaxial strain. We demonstrate that synthesizing RuO2 thin films on (110)-oriented TiO2 substrates enhances the density of states near the Fermi level, which stabilizes superconductivity under strain, and suggests that a promising strategy to create new transition-metal superconductors is to apply judiciously chosen anisotropic strains that redistribute carriers within the low-energy manifold of d orbitals.


1996 ◽  
Vol 31 (2) ◽  
pp. 117-125 ◽  
Author(s):  
Sanjay Gupta ◽  
Feroz Ahmed ◽  
Suresh Garg

Author(s):  
K. Sumitomo ◽  
K. Oura ◽  
I. Katayama ◽  
F. Shoji ◽  
T. Hanawa

Author(s):  
Ashwani Pratap ◽  
Karali Patra

Abstract This work presents an analytical cutting force modeling for micro-slot grinding. Contribution of the work lies in the consideration of both primary and secondary tool surface interactions with the work surface as compared to the previous works where only primary tool surface interaction was considered during cutting force modeling. Tool secondary surface interaction with workpiece is divided into two parts: cutting/ ploughing by abrasive grits present in exterior margin of the secondary tool surface and sliding/adhesion by abrasive grits in the inner margins of the secondary tool surface. Orthogonal cutting force model and indentation based fracture model is considered for cutting by both the abrasives of primary tool surface and the abrasives of exterior margin on the secondary surface. Asperity level sliding and adhesion model is adopted to solve the interaction between the workpiece and the interior margin abrasives of secondary tool surface. Experimental measurement of polycrystalline diamond tool surface topography is carried out and surface data is processed with image processing tools to determine the tool surface statistics viz., cutting edge density, grit height distribution and abrasive grit geometrical measures. Micro-slot grinding experiments are carried out on BK7 glass at varying feed rate and axial depths of cut to validate the simulated cutting forces. Simulated cutting forces considering both primary and secondary tool surface interactions are found to be much closer to the experimental cutting forces as compared to the simulated cutting forces considering only primary tool surface interaction.


1991 ◽  
Vol 237 ◽  
Author(s):  
Harry A. Atwater ◽  
C. J. Tsai ◽  
S. Nikzad ◽  
M.V.R. Murty

ABSTRACTRecent progress in low energy ion-surface interactions, and the early stages of ion-assisted epitaxy of semiconductor thin films is described. Advances in three areas are discussed: dynamics of displacements and defect incorporation, nucleation mechanisms, and the use of ion bombardment to modify epitaxial growth kinetics in atrulysurface-selective manner.


Author(s):  
J.E. Greene ◽  
S.A. Barnett ◽  
J.-E. Sundgren ◽  
A. Rockett

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