scholarly journals Use of Nuclear Techniques in the Characterization of Chrome Black Solar Absorber Surfaces

1979 ◽  
Vol 32 (4) ◽  
pp. 343 ◽  
Author(s):  
ZE Switkowski ◽  
JCP Heggie ◽  
GJ Clark ◽  
RJ Petty
Keyword(s):  
Ion Beam ◽  
Direct Capture ◽  
Depth Profiles ◽  
Solar Absorber ◽  
Solar Absorbers ◽  
Nuclear Techniques ◽  
Beam Analysis ◽  
Physical Features ◽  
Concentration Depth Profiles

A set of electrodeposited chrome black solar absorbers has been subjected to ion beam analysis in an attempt to determine the concentration depth profiles of the major elemental constituents. Chromium distributions were obtained using the 5 2Cr(p, )i)53Mn nuclear reaction, which is resonant at Ep = 1005�2 ke V. The possibility was investigated of inferring oxygen distributions from the )i-ray lineshapes (measured with a Ge(Li) detector) of the direct capture reaction 160(p, )i)17F. Concentration profiles were also obtained for fluorine and sodium contaminants in some chrome blacks. Complete experimental details are given of the various nuclear techniques used. The results of these measurements are discussed in terms of the microscopic physical features of the selective surfaces and are related to the known photothermal properties of the surfaces.

Characterization of GaAs[sub 1−x]N[sub x] epitaxial layers by ion beam analysis

2004 ◽  
Vol 22 (3) ◽  
pp. 908 ◽  
Author(s):  
P. Wei ◽  
M. Chicoine ◽  
S. Gujrathi ◽  
F. Schiettekatte ◽  
J.-N. Beaudry ◽  
...  
Keyword(s):  
Ion Beam ◽  
Epitaxial Layers ◽  
Ion Beam Analysis ◽  
Beam Analysis

Characterization of Natural and Synthesized FeTiO3 Crystals With RBS/PIXE/XRD

1997 ◽  
Vol 07 (03n04) ◽  
pp. 265-275
Author(s):  
R. Q. Zhang ◽  
S. Yamamoto ◽  
Z. N. Dai ◽  
K. Narumi ◽  
A. Miyashita ◽  
...  
Keyword(s):  
Single Crystals ◽  
Ion Beam ◽  
Pressure Control ◽  
Floating Zone ◽  
X Ray Diffraction ◽  
X Ray ◽  
Beam Analysis ◽  
Ppm Level

Natural FeTiO 3 (illuminate) and synthesized FeTiO 3, single crystals were characterized by Rutherford backscattering spectroscopy combined with channeling technique and particle-induced x-ray emission (RBS-C and PIXE). The results obtained by the ion beam analysis were supplemented by the x-ray diffraction analysis to identify the crystallographic phase. Oriented single crystals of synthesized FeTiO 3 were grown under the pressure control of CO 2 and H 2 mixture gas using a single-crystal floating zone technique. The crystal quality of synthesized FeTiO 3 single crystals could be improved by the thermal treatment but the exact pressure control is needed to avoid the precipitation of Fe 2 O 3 even during the annealing procedure. Natural FeTiO 3 contains several kinds of impurities such as Mn , Mg , Na and Si . The synthesized samples contain Al , Si and Na which are around 100 ppm level as impurities. The PBS-C results of the natural sample imply that Mn impurities occupy the Fe sublattice in FeTiO 3 or in mixed phase between ilmenite and hematite.

In situ characterization of rare earth-CdTe heterostructures by ion beam analysis

1994 ◽  
Vol 249 (2) ◽  
pp. 266-270 ◽  
Author(s):  
P Gros ◽  
G Fiat ◽  
D Brun ◽  
B Daudin ◽  
J Eymery ◽  
...  
Keyword(s):  
Rare Earth ◽  
Ion Beam ◽  
In Situ Characterization ◽  
Ion Beam Analysis ◽  
Beam Analysis

Characterization of SiC Thin Film Obtained by Magnetron Reactive Sputtering: IBA, IR and Raman Studies

2005 ◽  
Vol 483-485 ◽  
pp. 287-290
Author(s):  
H. Colder ◽  
M. Morales ◽  
Richard Rizk ◽  
I. Vickridge
Keyword(s):  
Nuclear Reaction ◽  
Hydrogen Content ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Nuclear Reaction Analysis ◽  
Elastic Recoil ◽  
Crystalline Fraction ◽  
Elastic Recoil Detection ◽  
Beam Analysis

Co-sputtering of silicon and carbon in a hydrogenated plasma (20%Ar-80%H2) at temperatures, Ts, varying from 200°C to 600°C has been used to grow SiC thin films. We report on the influence of Ts on the crystallization, the ratio Si/C and the hydrogen content of the grown films. Film composition is determined by ion beam analysis via Rutherford backscattering spectrometry, nuclear reaction analysis via the 12C(d,p0)13C nuclear reaction and elastic recoil detection analysi(ERDA) for hydrogen content. Infrared absorption (IR) has been used to determine the crystalline fraction of the films and the concentration of the hydrogen bonded to Si or to C. Complementary to IR, bonding configuration has been also characterized by Raman spectroscopy. As Ts is increased, the crystalline fraction increases and the hydrogen content decreases, as observed by both ERDA and IR. It also appears that some films contain a few Si excess, probably located at the nanograin boundaries.

Temperature Dependence of Ion Beam Mixing in Al

1981 ◽  
Vol 7 ◽  
Author(s):  
S.T. Picraux ◽  
D. M. Follstaedt ◽  
J. Delafond
Keyword(s):  
Low Temperatures ◽  
Driving Forces ◽  
Ion Beam ◽  
Slow Motion ◽  
Ion Beam Mixing ◽  
Depth Profiles ◽  
Mixing Rates ◽  
Atomic Mixing ◽  
Concentration Depth Profiles

ABSTRACTThe atomic mixing of evaporated Al/Sb films and of Al/Ag films on Al<110> crystal substrates by 400 keV Xe ion beams has been investigated. Concentration depth profiles were measured in situ by 1.5 MeV He scattering as a function of Xe fluence from 2 to 32×1015 Xe/cm2. The initial mixing rates are similar at 85 and 300 K; mixing proceeds by rapid motion of Al (≈15 Al/Xe) into and uniformly through the thickness of the Sb film and by a slow motion of Sb (≈0.5 Sb/Xe) into the Al<110> substrate. More rapid Sb mixing into Al occurs for polycrystalline Al. The rate for Al into Sb slows at concentrations approaching the stable AlSb phase. Appreciably higher rates of Sb mixing into Al (2.2 to 2.8 Sb/Xe) occur at 575 K. Mixing rates for the highly soluble system, Al/Ag, are compared to the nearly insoluble Al/Sb at 85 and 300 K. Appreciably higher rates are found for Ag than for Sb, suggesting the influence of chemical driving forces even at these low temperatures.

scholarly journals Elemental thin film depth profiles by ion beam analysis using simulated annealing - a new tool

2003 ◽  
Vol 36 (7) ◽  
pp. R97-R126 ◽  
Author(s):  
C Jeynes ◽  
N P Barradas ◽  
P K Marriott ◽  
G Boudreault ◽  
M Jenkin ◽  
...  
Keyword(s):  
Thin Film ◽  
Simulated Annealing ◽  
Ion Beam ◽  
Ion Beam Analysis ◽  
Depth Profiles ◽  
Beam Analysis
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