Sunpatiens compact hot coral: memristors in flowers

2018 ◽  
Vol 45 (2) ◽  
pp. 222 ◽  
Author(s):  
Alexander G. Volkov ◽  
Eunice K. Nyasani
Keyword(s):  
Hysteresis Loop ◽  
Plasma Membranes ◽  
Hysteresis Loops ◽  
Electrical Current ◽  
Low Frequencies ◽  
Current Voltage ◽  
Pinched Hysteresis Loop ◽  
Pinched Hysteresis ◽  
With Memory

Leon Chua postulated the theory of a memristor – a resistor with memory – in 1971, and the first solid-state memristor was built in 2008. Memristors exist in vivo as components of plasma membranes in plants, fruits, roots and seeds. A memristor is a nonlinear element; its current-voltage characteristic is similar to that of a Lissajous pattern. Here, we found memristors in flowers. Electrostimulation by bipolar periodic sinusoidal or triangular waves of an androecium, a spur, petals and a pedicel in Sunpatiens flowers induces hysteresis loops with a pinched point at low frequencies between 0.1 mHz and 1 mHz. At high frequencies, the pinched hysteresis loop transforms to a non-pinched hysteresis loop instead of a single line I = U/R for ideal memristors because the amplitude of electrical current depends on capacitance of a flower’s tissue and electrodes, frequency and direction of scanning. The discovery of memristors in Sunpatiens (Impatiens spp.) creates a new direction in the modelling and understanding of electrophysiological phenomena in flowers.

scholarly journals CMOS Realization of All-Positive Pinched Hysteresis Loops

Complexity ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-15 ◽  
Author(s):  
B. J. Maundy ◽  
A. S. Elwakil ◽  
C. Psychalinos
Keyword(s):  
Hysteresis Loop ◽  
Detailed Analysis ◽  
Hysteresis Loops ◽  
Nonlinear Circuits ◽  
Experimental Results ◽  
First Order ◽  
Pinched Hysteresis Loop ◽  
A Charge ◽  
Pinched Hysteresis ◽  
Nmos Transistors

Two novel nonlinear circuits that exhibit an all-positive pinched hysteresis loop are proposed. These circuits employ two NMOS transistors, one of which operates in its triode region, in addition to two first-order filter sections. We show the equivalency to a charge-controlled resistance (memristance) in a decremental state via detailed analysis. Simulation and experimental results verify the proposed theory.

Computing Areas of Pinched Hysteresis Loops of Mem-Systems in OrCAD PSPICE

2013 ◽  
Vol 278-280 ◽  
pp. 1081-1090 ◽  
Author(s):  
Dalibor Biolek ◽  
Zdenek Biolek ◽  
Viera Biolkova ◽  
Zdenek Kolka
Keyword(s):  
Hysteresis Loop ◽  
Memory Effect ◽  
Hysteresis Loops ◽  
Simulation Software ◽  
Excitation Signal ◽  
Pspice Simulation ◽  
Special Cases ◽  
Special Measuring ◽  
Pinched Hysteresis Loop ◽  
Pinched Hysteresis

The pinched hysteresis loop belongs to the fingerprints of the so-called mem-systems, their well-known special cases being memristors. The memory effect of the system is determined by the area of the curve lobes which gradually decrease with increasing repeating frequency of the excitation signal. The paper describes a method for automated computation of the above areas via the commonly utilized OrCAD PSpice simulation software with the help of special measuring functions of the PROBE postprocessor. The usefulness of the method is illustrated on an example of the analysis of a TiO2 memristor.

A Novel Floating/Grounded Meminductor Emulator

2020 ◽  
Vol 29 (15) ◽  
pp. 2050247 ◽  
Author(s):  
Hasan Sozen ◽  
Ugur Cam
Keyword(s):  
Hysteresis Loop ◽  
Operational Amplifier ◽  
Current Conveyors ◽  
Current Feedback ◽  
Transconductance Amplifier ◽  
Additional Control ◽  
Pinched Hysteresis Loop ◽  
Terminal Element ◽  
Current Feedback Operational Amplifier ◽  
Pinched Hysteresis

Meminductor is a nonlinear two-terminal element with storage energy and memory ability. To date, meminductor element is not available commercially as memristor and memcapacitor are. Therefore, it is of great significance to implement a meminductor emulator for breadboard experiment. In this paper, a flux-controlled floating/grounded meminductor emulator without a memristor is presented. It is built with commercially available off-the-shelf electronic devices. It consists of single operational transconductance amplifier (OTA), single multiplier, two second-generation current conveyors (CCIIs), single current-feedback operational amplifier (CFOA) and single operational amplifier. Using OTA device introduces an additional control parameter besides frequency and amplitude values of applied voltage to control the area of pinched hysteresis loop of meminductor. Mathematical model of proposed emulator circuit is given to describe the behavior of meminductor circuit. The breadboard experiment is performed using CA3080, AD844, AD633J and LM741 for OTA, CCII–CFOA, multiplier and operational amplifier, respectively. Simulation and experimental test results are given to verify the theoretical analyses. Frequency-dependent pinched hysteresis loop is maintained up to 5 kHz. The presented meminductor emulator tends to work as ordinary inductor for higher frequencies.

A Novel Bipolar Photon-Controlled Generalized Memristor Based on Avalanche Photodiode

2020 ◽  
pp. 2150090
Author(s):  
Jianxiu Hao ◽  
Xiangliang Jin ◽  
Bo Peng
Keyword(s):  
Topological Structure ◽  
Hysteresis Loops ◽  
Avalanche Photodiode ◽  
Circuit Model ◽  
Traditional Model ◽  
Circuit Simulator ◽  
Dynamical Characteristics ◽  
Spice Model ◽  
Pinched Hysteresis Loop ◽  
Pinched Hysteresis

A novel bipolar photon-controlled generalized memristor model with an avalanche photodiode (APD) passive quenching circuit is presented in this paper. The SPICE model of the circuit is established and its fingerprints are analyzed by the pinched hysteresis loops with different bipolar periodic stimuli. The dynamical characteristics of the proposed circuit model are investigated both theoretically and simulatively. The results verified by Cadence Spectre circuit simulator demonstrate that the proposed circuit model is a simple bipolar photon-controlled generalized memristor. Compared with the previously published memristor models, the biggest innovation of this paper is to propose a bipolar generalized memristor model instead of the traditional model, which can easily form the pinched hysteresis loop. Another highlight is that the generalized memristor model in this paper is controlled by photons while conventional memristors are charge-controlled/flux-controlled. Furthermore, the circuit level models are more stable, more reliable and more resistant to interference than the device level models. The topological structure of the proposed circuit model in this paper is much more simpler.

Computation of the Area of Memristor Pinched Hysteresis Loop

2012 ◽  
Vol 59 (9) ◽  
pp. 607-611 ◽  
Author(s):  
Zdeněk Biolek ◽  
Dalibor Biolek ◽  
Viera Biolkova
Keyword(s):  
Hysteresis Loop ◽  
Pinched Hysteresis Loop ◽  
Pinched Hysteresis

scholarly journals A Novel Generalized Memristor Based on Three-Phase Diode Bridge Rectifier

Complexity ◽  
2019 ◽  
Vol 2019 ◽  
pp. 1-8
Author(s):  
Chaojun Wu ◽  
Ningning Yang ◽  
Cheng Xu ◽  
Rong Jia ◽  
Chongxin Liu
Keyword(s):  
Hysteresis Loops ◽  
Normal Operation ◽  
Rectifier Circuit ◽  
The Third ◽  
Three Phase ◽  
Bridge Rectifier ◽  
Pinched Hysteresis Loop ◽  
Intersection Points ◽  
Simulation Results ◽  
Pinched Hysteresis

Memristive characteristics in three-phase diode bridge rectifier circuit are proposed in this paper. The conduction of the diodes is discussed and the characteristics of the pinched hysteresis loop are analyzed by both numerical simulations and circuit simulations. The hysteresis loops of each phase not only are pinched at the origin but also have the other two intersection points in the first quadrant and the third quadrant when three-phase bridge rectifier circuit is running under normal operation. Other conditions are also discussed when a variety of faults conditions occur. The simulation results verify that the three-phase bridge rectifier circuit can be described as a generalized memristor element during several operation states.

scholarly journals Analytical Study on the Influence of Parasitic Elements in a Memristor

2018 ◽  
Vol 2018 ◽  
pp. 1-7
Author(s):  
Kristopher J. Chandía ◽  
Mauro Bologna ◽  
Bernardo Tellini
Keyword(s):  
Hysteresis Loop ◽  
Analytical Study ◽  
Multiple Scale ◽  
Intersection Point ◽  
Operating Frequency ◽  
Analytical Expression ◽  
Functional Behavior ◽  
Pinched Hysteresis Loop ◽  
Pinched Hysteresis ◽  
Scale Scheme

We study a memristive circuit with included parasitic elements, such as capacitance and inductance. In the multiple-scale scheme, we analytically show how the parasitic elements affect the voltage and the current. Finally, we provide an analytical expression for the intersection point coordinates, through which we discuss the functional behavior of the pinched hysteresis loop versus the operating frequency and the parasitic elements.

A New Floating Memristance Simulator Circuit Based on Second Generation Current Conveyor

2016 ◽  
Vol 26 (02) ◽  
pp. 1750029 ◽  
Author(s):  
Zehra Gulru Cam ◽  
Herman Sedef
Keyword(s):  
Hysteresis Loop ◽  
Second Generation ◽  
Current Conveyor ◽  
Experimental Results ◽  
Current Conveyors ◽  
Frequency Range ◽  
Passive Element ◽  
Exciting Frequency ◽  
Pinched Hysteresis Loop ◽  
Pinched Hysteresis

In this paper, a new floating analog memristance simulator circuit based on second generation current conveyors and passive elements is proposed. Theoretical derivations are presented which decribe the circuit characteristics. The hardware of proposed simulator circuit is built using commercially available components. Theoretical derivations are validated with PSPICE simulation and experimental results. Performance of circuit was tested with simple example circuits. All results show that proposed simulator circuit provides frequency dependent pinched hysteresis loop and nonvolatility features. Exciting frequency, minimum and maximum memristance values and memristance range can be adjustable with simple passive element values. Simulator circuit has a frequency range of 1[Formula: see text]Hz to 40[Formula: see text]kHz.

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