Enhanced Squaraine Rotaxane Endoperoxide Chemiluminescence in Acidic Alcohols

2015 ◽  
Vol 68 (9) ◽  
pp. 1359 ◽  
Author(s):  
Evan M. Peck ◽  
Allen G. Oliver ◽  
Bradley D. Smith
Keyword(s):  
Near Infrared ◽  
Light Emission ◽  
Bond Cleavage ◽  
Infrared Light ◽  
Aprotic Solvents ◽  
Chemiluminescence Intensity ◽  
Effect Of Solvent ◽  
Cleavage Process ◽  
Spectroscopic Analyses ◽  
Squaraine Rotaxane

Squaraine rotaxane endoperoxides (SREPs) are storable chemiluminescent compounds that undergo a clean cycloreversion reaction that releases singlet oxygen and emits near-infrared light when warmed to body temperature. This study examined the effect of solvent on SREP chemiluminescence intensity and found that acidic alcohols, such as 2,2,2-trifluoroethanol, α-(trifluoromethyl)benzyl alcohol, and 1,1,1,3,3,3-hexafluoroisopropanol, greatly increased chemiluminescence. In contrast, aprotic solvents, such as trifluoroethylmethyl ether, had no effect. The interlocked rotaxane structure was necessary as no chemiluminescence was observed when the experiments were conducted with samples containing a mixture of the two non-interlocked components (squaraine thread and macrocycle endoperoxide). Spectroscopic analyses of the enhanced SREP chemiluminescent reactions showed a mixture of products. In addition to the expected squaraine rotaxane product caused by cycloreversion of the endoperoxide, a diol derivative was isolated. The results are consistent with an endoperoxide O–O bond cleavage process that is promoted by the hydrogen bonding solvent and produces light emission from a squaraine excited state.

Near-Infrared Light Emission from of Er-Doped ZnO Thin Film in Micropits Processed on Si Substrate

2006 ◽  
Vol 320 ◽  
pp. 113-116
Author(s):  
Shigeru Tanaka ◽  
Yukari Ishikawa ◽  
Naoki Ohashi ◽  
Junichi Niitsuma ◽  
Takashi Sekiguchi ◽  
...  
Keyword(s):  
Thin Film ◽  
Near Infrared ◽  
Light Emission ◽  
Infrared Light ◽  
Zno Thin Film ◽  
Si Substrate ◽  
Near Infrared Light ◽  
Transmission Electron ◽  
Doped Zno ◽  
Er Doped

We have obtained Er-doped ZnO thin film in a micropattern of reverse trapezoids processed on Si substrate by sputtering and ultrafine polishing techniques. Near-infrared light emission was detected successfully from the thin film filling a single micropit with 10 μm square. Transmission electron microscopy (TEM) observation showed epitaxial growth of ZnO crystals along the curvature of the micropit.

scholarly journals A facile method for preparing Yb3+-doped perovskite nanocrystals with ultra-stable near-infrared light emission

RSC Advances ◽  
2020 ◽  
Vol 10 (30) ◽  
pp. 17635-17641 ◽  
Author(s):  
Chunqian Zhang ◽  
Aidi Zhang ◽  
Taoran Liu ◽  
Lin Zhou ◽  
Jun Zheng ◽  
...  
Keyword(s):  
Near Infrared ◽  
Light Emission ◽  
Infrared Light ◽  
Near Infrared Light ◽  
Perovskite Nanocrystals ◽  
Excellent Stability

A facile method for fabricating CsPbBr3:Yb3+@SiO2 NCs which guarantees high PLQY and excellent stability at the same time.

scholarly journals Enhanced UV Light Emission by Core-Shell Upconverting Particles Powering up TiO2 Photocatalysis in Near-Infrared Light

Catalysts ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 232
Author(s):  
Agnieszka Jarosz-Duda ◽  
Paulina O’Callaghan ◽  
Joanna Kuncewicz ◽  
Przemysław Łabuz ◽  
Wojciech Macyk
Keyword(s):  
Near Infrared ◽  
Light Emission ◽  
Uv Light ◽  
Protective Layer ◽  
Upconversion Emission ◽  
High Photocatalytic Activity ◽  
Infrared Light ◽  
Core Shell ◽  
The Core ◽  
Surface Luminescence

The core-shell NaYb0.99F4:Tm0.01@NaYF4 upconverting particles (UCPs) with a high UV emission to apply in NIR-driven photocatalysis were synthesized. The influence of the Yb3+ doping concentration in NaYxF4:Yb0.99−xTm0.01 core particles, and the role of the NaYF4 shell on the upconversion emission intensity of the UCPs were studied. The absorption of NIR light by the obtained UCPs was maximized by increasing the Yb3+ concentration in the core, reaching the maximum for Y3+-free particles (NaYb0.99F4:Tm0.01). Additionally, covering the NaYb0.99F4:Tm0.01 core with a protective layer of NaYF4 minimized the surface luminescence quenching, which significantly improved the efficiency of upconversion emission. The high intensity of the UV light emitted by the NaYb0.99F4:Tm0.01@NaYF4 under NIR irradiation resulted in a high photocatalytic activity of TiO2 (P25) mixed with the synthesized material.

Influence of Dislocation Loops on the Near-Infrared Light Emission From Silicon Diodes

2007 ◽  
Vol 54 (8) ◽  
pp. 1860-1866 ◽  
Author(s):  
Tu Hoang ◽  
J. Holleman ◽  
Phuong LeMinh ◽  
J. Schmitz ◽  
T. Mchedlidze ◽  
...  
Keyword(s):  
Near Infrared ◽  
Light Emission ◽  
Infrared Light ◽  
Dislocation Loops ◽  
Near Infrared Light

Near-infrared light-emitting devices from individual heavily Ga-doped ZnO microwires

2017 ◽  
Vol 5 (10) ◽  
pp. 2542-2551 ◽  
Author(s):  
Gao-Hang He ◽  
Ming-Ming Jiang ◽  
Lin Dong ◽  
Zhen-Zhong Zhang ◽  
Bing-Hui Li ◽  
...  
Keyword(s):  
Near Infrared ◽  
Light Emission ◽  
Infrared Light ◽  
Near Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Doped Zno

Electrically driven near-infrared light-emission from individual heavily Ga-doped ZnO microwires has been achieved, which can be analogous to incandescent sources.

Comparative Investigation of Structural and Optical Properties of Si-Rich Oxide Films Fabricated by Magnetron Sputtering

2013 ◽  
Vol 854 ◽  
pp. 117-124 ◽  
Author(s):  
Larysa Khomenkova ◽  
M. Baran ◽  
Oleksandr Kolomys ◽  
Victor Strelchuk ◽  
Andrian V. Kuchuk ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Near Infrared ◽  
Light Emission ◽  
Argon Plasma ◽  
Annealing Treatment ◽  
Deposition Process ◽  
Peak Position ◽  
Comparative Investigation ◽  
Infrared Light ◽  
Pl Spectra

RF magnetron sputtering of two separate silicon and oxide (SiO2 or Al2O3) targets in pure argon plasma was used for deposition of Six(SiO2)1-x and Six(Al2O3)1-x films with x=0.15-0.7 on long fused quarts substrate. The effect of post-fabrication treatments on structural and light emitting properties of the films with different x values was investigated by means of Raman scattering, electron paramagnetic resonance and X-ray diffraction as well as by photoluminescence (PL) methods. The formation of amorphous Si clusters upon deposition process was found for the both types of films. The annealing treatment at 1150°C during 30 min results in formation of Si nanocrystallites (Si-ncs). The latter were found to be larger in Six(Al2O3)1-x films than that in Six(SiO2)1-x counterparts with the same x values and are under tensile stresses. The investigation of photoluminescence properties of annealed films of both types revealed the appearance of visible-near infrared light emission. The Six(SiO2)1-x films demonstrated one broad PL band which peak position shifts gradually to from 1.4 eV to 1.8 eV with the x decrease. Contrary to this, for the Six(Al2O3)1-x films two overlapped PL bands were observed in the 1.4-2.4 eV spectral range with peak positions at ~2.1 eV and ~1.7 eV accompanied by near-infrared tail. Comparative analysis of PL spectra of both types samples showed that the main contribution to PL spectra of Six(SiO2)1-x films is given by exciton recombination in the Si-ncs whereas PL emission of Six(Al2O3)1-x films is caused mainly by carrier recombination either via defects in matrix or via electron states at the Si-ncs/matrix interface.

scholarly journals Infrared Light Emission From Semiconductor Devices

1996 ◽  
Author(s):  
D.L. Barton ◽  
P. Tangyunyong ◽  
J.M. Soden ◽  
A.Y. Liang ◽  
F.J. Low ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Quantum Efficiency ◽  
Near Infrared ◽  
Light Emission ◽  
Photon Emission ◽  
Ccd Camera ◽  
Infrared Light ◽  
High Quantum Efficiency ◽  
High Quantum ◽  
Cooled Ccd

Abstract We present results using near-infrared (NIR) cameras to study emission. characteristics of common defect classes for integrated circuits (ICs). The cameras are based on a liquid nitrogen cooled HgCdTe imaging array with high quantum efficiency and very low read noise. The array was developed for infrared astronomy and has high quantum efficiency in the wavelength range from 0.8 to 2.5 µm. For comparison, the same set of samples used to characterize the performance of the NIR camera were studied using a non-intensified, liquidnitrogen- cooled, slow scan CCD camera (with a spectral range from 400-1100 nm). Our results show that the NIR camera images all of the defect classes studied here with much shorter integration times than the cooled CCD, suggesting that photon emission beyond 1 µm is significantly stronger than at shorter wavelengths.

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