Optically pumped semiconductor laser based on a type-II CdS/ZnSe heterostructure

2020 ◽  
Vol 50 (7) ◽  
pp. 683-687 ◽  
Author(s):  
M R Butaev ◽  
V I Kozlovsky ◽  
Ya K Skasyrsky
Keyword(s):  
Semiconductor Laser ◽  
Type Ii ◽  
Optically Pumped

Detailed X-ray diffraction studies on optically pumped mid-infrared InAs/Ga(In)Sb/AlSb type-II lasers

2003 ◽  
Vol 257 (1-2) ◽  
pp. 42-50 ◽  
Author(s):  
G. Hoffmann ◽  
H.J. Schimper ◽  
C. Schwender ◽  
N. Herhammer ◽  
G.F. West ◽  
...  
Keyword(s):  
Type Ii ◽  
X Ray Diffraction ◽  
Optically Pumped ◽  
Mid Infrared ◽  
X Ray

Optically pumped organic semiconductor laser with low temperature-cleaved mirrors

2006 ◽  
Author(s):  
Masataka Shibamoto ◽  
Kazuhiro Matsumoto ◽  
Hidenori Takasugi ◽  
Masahiro Kato ◽  
N. Shinichi Takahashi
Keyword(s):  
Low Temperature ◽  
Semiconductor Laser ◽  
Organic Semiconductor ◽  
Optically Pumped ◽  
Organic Semiconductor Laser

scholarly journals Narrow linewidth operation of a tunable optically pumped semiconductor laser

2004 ◽  
Vol 12 (22) ◽  
pp. 5434 ◽  
Author(s):  
Richard H. Abram ◽  
Kyle S. Gardner ◽  
Erling Riis ◽  
Allister I. Ferguson
Keyword(s):  
Semiconductor Laser ◽  
Narrow Linewidth ◽  
Optically Pumped

High-Power Low-Threshold Optically Pumped Type-ll Quantum-Well Lasers

1997 ◽  
Vol 484 ◽  
Author(s):  
Chih-Hsiang Lin ◽  
S. J. Murry ◽  
Rui Q. Yang ◽  
S. S. Pei ◽  
H. Q. Le ◽  
...  
Keyword(s):  
Quantum Well ◽  
Output Power ◽  
Optical Pumping ◽  
Internal Quantum Efficiency ◽  
Characteristic Temperature ◽  
Stimulated Emission ◽  
Free Carrier Absorption ◽  
Type Ii ◽  
Optically Pumped ◽  
Internal Loss

AbstractStimulated emission in InAs/InGaSb/InAs/AlSb type-II quantum-well (QW) lasers was observed up to room temperature at 4.5 μm, optically pumped by a pulsed 2-μm Tm:YAG laser. The absorbed threshold peak pump intensity was only 1.1 kW/cm2 at 300 K, with a characteristic temperature T0 of 61.6 K for temperatures up to 300 K. We will also study the effects of internal loss on the efficiency and output power for type-II QW lasers via optical pumping. Using a 0.98-μm InGaAs linear diode array, the devices exhibited an internal quantum efficiency of 67% at temperatures up to 190 K, and was capable of < 1. 1-W peak output power per facet in 6-μs pulses at 85 K. The internal loss of the devices exhibited an increase from 18 cm−1 near 70 K to ∼ 60–100 cm−1 near 180 K, which was possibly due to inter-valence band free carrier absorption.

Modeling of optically pumped type-II lasers

2001 ◽  
Author(s):  
Yao-Ming Mu ◽  
Han Q. Le ◽  
Shin Shem Pei
Keyword(s):  
Type Ii ◽  
Optically Pumped

Single-mode semiconductor laser optically pumped by an Injection laser

1983 ◽  
Author(s):  
T. C. Damen ◽  
M. A. Duguay ◽  
B. I. Miller ◽  
C. Lin
Keyword(s):  
Semiconductor Laser ◽  
Single Mode ◽  
Injection Laser ◽  
Optically Pumped

Optically Pumped Continuously Tunable Mid-IR Distributed-Feedback Semiconductor Laser

2016 ◽  
Vol 52 (10) ◽  
pp. 1-10 ◽  
Author(s):  
Xiang He ◽  
Steve Benoit ◽  
Ron Kaspi ◽  
Steven R. J. Brueck
Keyword(s):  
Semiconductor Laser ◽  
Distributed Feedback ◽  
Optically Pumped
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