A measuring method for the determination of linear thermal expansion of porous materials at high temperatures

1999 ◽  
Vol 31 (6) ◽  
pp. 595-600 ◽  
Author(s):  
Jan Toman ◽  
Petra Koudelová
Keyword(s):  
Thermal Expansion ◽  
Porous Materials ◽  
High Temperatures ◽  
Linear Thermal Expansion ◽  
Measuring Method

Confirmation of the new technique for measuring the linear thermal expansion of silicon

1993 ◽  
Vol 8 (1) ◽  
pp. 36-38 ◽  
Author(s):  
Liu Fengchao
Keyword(s):  
Thermal Expansion ◽  
Room Temperature ◽  
Accurate Determination ◽  
Linear Thermal Expansion ◽  
Linear Expansion Coefficient ◽  
X Ray ◽  
High Purity Silicon ◽  
Different Temperatures ◽  
Better Than

This paper further confirms that the direct measurement of diffraction angles at different temperatures by using the X-ray diffractometer is better than measurement of the lattice parameters for the rapid and accurate determination of the linear thermal expansion of silicon. High purity silicon has the linear expansion coefficient, α= (2.45±0.05) × 10−6/°C at room temperature. This value does not change for doped P-type and N-type silicon.

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