Thermophysical properties of silicon carbide green bodies prior to, during, and after the sintering process

2003 ◽  
Vol 35/36 (5) ◽  
pp. 513-520 ◽  
Author(s):  
Jürgen Blumm ◽  
Johannes Opfermann
Keyword(s):  
Silicon Carbide ◽  
Thermophysical Properties ◽  
Sintering Process

Influence of Nitride on Sinterability of the Composite of Lithium Aluminum Silicate and Silicon Carbide

2006 ◽  
Vol 317-318 ◽  
pp. 177-180 ◽  
Author(s):  
Mabito Iguchi ◽  
Motohiro Umezu ◽  
Masako Kataoka ◽  
Hiroaki Nakamura ◽  
Mamoru Ishii
Keyword(s):  
Silicon Carbide ◽  
Thermal Expansion ◽  
Melting Point ◽  
Liquid Phase ◽  
Room Temperature ◽  
Aluminum Silicate ◽  
Lithium Aluminum ◽  
Sintering Process ◽  
Thermal Expansion Coefficients ◽  
Expansion Coefficients

Ceramics with zero thermal expansion coefficients at room temperature (293K) were investigated. We found the thermal expansion coefficient was controlled by a compounding ratio of lithium aluminum silicate (LAS) and silicon carbide (SiC), which have negative and positive thermal expansion coefficients respectively. Although it was difficult to densify the composite of the LAS and SiC (LAS/SiC) in the sintering process, an addition of nitride improved the sinterability of the LAS/SiC. In order to examine the effect of the nitride additive, at first, the melting point of the LAS with silicon nitride (Si3N4) or aluminum nitride was measured by TG-DTA. The melting point of the LAS decreased with existence of nitride. It is believed that the densification of the LAS/SiC was promoted by the nitride, because the nitride causes the LAS/SiC to form a liquid phase, thereby decreasing the melting point. Next, the lattice constant of the LAS with Si3N4 was measured by XRD and it was verified that the a-axis was longer and the c-axis was shorter than those of the LAS without additive. It is supposed that this phenomenon is due to the substitution of nitrogen for oxygen in the LAS lattice, and the decrease of the melting point of the LAS with nitride seems to be influenced by this substitution of nitrogen.

The Thermal Expansion Behaviors of Cu-SiCp Composites

2013 ◽  
Vol 795 ◽  
pp. 237-240
Author(s):  
K. Azmi ◽  
M.N. Derman ◽  
Mohd Mustafa Al Bakri Abdullah
Keyword(s):  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Thermal Expansion ◽  
Thermal Management ◽  
Thermophysical Properties ◽  
Copper Matrix ◽  
Experimental Results ◽  
High Thermal Conductivity ◽  
Coating Process ◽  
Electroless Coating

The demand for advanced thermal management materials such as silicon carbide reinforced copper matrix (Cu-SiCp) composites is increasing due to their high thermal conductivity and low CTE properties. However, the weak bonding between the copper matrix and the SiCp reinforcement degrades the thermophysical properties of the composites. In order to improve the bonding between the two constituents, the SiCp were copper coated (Cu-Coated) via electroless coating process. Based on the experimental results, the CTE values of the Cu-Coated Cu-SiCp composites were found significantly lower than those of the non-Coated Cu-SiCp composites. The CTEs of the Cu-Coated Cu-SiCp composites were in agreement with Kernels model which accounts for both the shear and isostatic stresses developed in the component phases.

scholarly journals The Role of Aluminium in the Synthesis of Mesoporous 4H Silicon Carbide

2015 ◽  
Vol 821-823 ◽  
pp. 970-973
Author(s):  
Jeanette Hvam ◽  
Per Morgen ◽  
Terence Edwin Warner ◽  
Eivind Morten Skou ◽  
Thomas Wolff
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Particulate Filter ◽  
High Porosity ◽  
Sintering Process ◽  
Diesel Particulate ◽  
High Temperature Reaction ◽  
Ternary Carbides ◽  
Highly Porous

Aluminium is found to play a key role in the process of forming a mechanically stable and highly porous and granular structure of 4H silicon carbide. The material is prepared by a high temperature reaction of the elemental constituents. The reactions are carried out under different background atmospheres, including nitrogen. Ternary carbides containing Al, Si and N, are formed in the process, and are believed to be responsible for the final outcome of the process, at the highest reaction temperatures, in the form of pure, well-connected grains of 4H-SiC forming a strong and rigid structure with high porosity. The Al containing compounds function as structural promoters for the 4H polytype recrystallization. This is expected - and partly shown - to take place through substitution with 4H-SiC and evaporation of all other constituents during the high temperature sintering step. When extruded into honeycomb structures prior to the sintering process this pure mesoporous SiC final product turns out to be ideal for a combined diesel particulate filter with support for catalysts in the pores.

Blending of iron and silicon carbide powders for producing metal matrix composites by laser sintering process

2010 ◽  
Vol 16 (4) ◽  
pp. 258-267 ◽  
Author(s):  
Cheekur Krishnamurthy Srinivasa ◽  
Chinnakurli Suryanarayana Ramesh ◽  
S.K. Prabhakar
Keyword(s):  
Silicon Carbide ◽  
Metal Matrix Composites ◽  
Metal Matrix ◽  
Laser Sintering ◽  
Matrix Composites ◽  
Sintering Process

scholarly journals Silicon carbide nanocomposites reinforced with disordered graphitic carbon formed in situ through oxidation of Ti3C2 MXene during sintering

2021 ◽  
Vol 21 (3) ◽  
Author(s):  
M. Petrus ◽  
J. Woźniak ◽  
T. Cygan ◽  
A. Lachowski ◽  
A. Rozmysłowska-Wojciechowska ◽  
...  
Keyword(s):  
Fracture Toughness ◽  
Silicon Carbide ◽  
Reference Sample ◽  
Powder Metallurgy Technique ◽  
Sintering Process ◽  
Plasma Sintering ◽  
Transmission Electron ◽  
Spark Plasma ◽  
Sintering Method

AbstractThis article describes the manufacturing of silicon carbide composites with the addition of quasi-two-dimensional titanium carbide Ti3C2, known as MXene. The composites were obtained by the powder metallurgy technique, consolidated with the use of the Spark Plasma Sintering method at 1900 °C and dwelled for 30 min. The influence of the Ti3C2 MXene addition on the microstructure and mechanical properties of the composites was investigated. The structure of the MXene phase after the sintering process was also analyzed. The results showed a significant increase (almost 50%) of fracture toughness for composites with the addition of 0.2 wt% Ti3C2 MXene. In turn, the highest hardness, 23.2 GPa, was noted for the composite with the addition of the 1.5 wt% Ti3C2 MXene phase. This was an increase of over 10% in comparison to the reference sample. The analysis of chemical composition and observations using a transmission electron microscope showed that the Ti3C2 MXene phase oxidizes during sintering, resulting in the formation of crystalline, highly defected, disordered graphite structures. The presence of these structures in the microstructure, similarly to graphene, significantly affects the hardness and fracture toughness of silicon carbide.

scholarly journals Fabrication of Porous SiC by Direct Selective Laser Sintering Effect of Boron Carbide

Metals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 737
Author(s):  
Rongzhen Liu ◽  
Gong Chen ◽  
Yudi Qiu ◽  
Peng Chen ◽  
Yusheng Shi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Selective Laser Sintering ◽  
Minimum Energy ◽  
Laser Sintering ◽  
Extreme Conditions ◽  
Sintering Process ◽  
Application Performance ◽  
Chemical Corrosion ◽  
Porous Sic ◽  
Sintered Silicon

Additive manufactured porous SiC is a promising material applied in extreme conditions characterised by high temperatures, chemical corrosion, and irradiation etc. However, residual Si’s existence deteriorates its performance and limits its application in harsh environments. In this study, B4C was introduced into the selective laser sintering process of SiC, and its effects on forming ability, pore parameters, microstructure, and phases were investigated. The results showed that when B4C was added, the processing window was enlarged. The minimum energy density was reduced from 457 J/cm2 to 214 J/cm2 when the content of B4C reached 15 wt%. Microstructure orientation was enhanced, and the residual silicon content was decreased from 38 at.% to about 8 at.%. Small pores were turned into large pores with the increase of B4C addition. The findings indicate that the addition of B4C increases the amount of liquid phase during the laser sintering process of silicon carbide, improving the SiC struts’ density and reducing the residual silicon by reacting with it. Therefore, the addition of B4C will help improve the application performance of selected laser-sintered silicon carbide under extreme conditions.

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