Raman spectroscopy of the Jahn–Teller phonons in a magnetic LaMnO3 thin film grown on KTaO3

2022 ◽  
Vol 131 (2) ◽  
pp. 025302
Author(s):  
Giovanni Annur Safarina ◽  
Yong-Jin Kim ◽  
Heung-Sik Park ◽  
Chan-Ho Yang
Keyword(s):  
Thin Film ◽  
Raman Spectroscopy ◽  
Jahn Teller

Combinatorial (Ba,Sr)TiO3 thin film growth: X-ray diffraction and Raman spectroscopy

2009 ◽  
Vol 106 (3) ◽  
pp. 034108 ◽  
Author(s):  
H. Bouyanfif ◽  
J. Wolfman ◽  
M. El Marssi ◽  
Y. Yuzyuk ◽  
R. Bodeux ◽  
...  
Keyword(s):  
Thin Film ◽  
Raman Spectroscopy ◽  
Film Growth ◽  
Thin Film Growth ◽  
Tio3 Thin Film ◽  
X Ray Diffraction ◽  
X Ray

Chemical Bath Deposition of Lead Sulphide (PbS) Thin Film and their Characterization

2013 ◽  
Vol 209 ◽  
pp. 111-115 ◽  
Author(s):  
Sandip V. Bhatt ◽  
M.P. Deshpande ◽  
Bindiya H. Soni ◽  
Nitya Garg ◽  
Sunil H. Chaki
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Raman Spectroscopy ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Excitation Wavelength ◽  
Face Centered Cubic ◽  
Phonon Modes ◽  
Lead Sulphide ◽  
X Ray

Thin film deposition of PbS is conveniently carried out by chemical reactions of lead acetate with thiourea at room temperature. Energy dispersive analysis of X-ray (EDAX), X-ray diffraction (XRD), selected area electron diffraction patterns (SAED), UV-Vis-NIR spectrophotometer, Scanning Electron Microscopy (SEM), Atomic force microscopy (AFM), Photoluminescence (PL) and Raman spectroscopy techniques are used for characterizing thin films. EDAX spectra shows that no impurity is present and XRD pattern indicates face centered cubic structure of PbS thin films. The average crystallite size obtained using XRD is about 15nm calculated using Scherrer’s formula and that determined from Hall-Williamson plot was found to be 18nm. SAED patterns indicate that the deposited PbS thin films are polycrystalline in nature. Blue shift due to quantum confinement was seen from the UV-Vis-NIR absorption spectra of thin film in comparison with bulk PbS. The Photoluminescence spectra obtained for thin film with different excitation sources shows sharp emission peaks at 395nm and its intensity of photoluminescence increases with increasing the excitation wavelength. Raman spectroscopy of deposited thin film was used to study the optical phonon modes at an excitation wavelength of 488nm using (Ar+) laser beam.

Probing disorder and transport properties in polypyrrole thin-film devices by impedance and Raman spectroscopy

2013 ◽  
Vol 46 (36) ◽  
pp. 365306 ◽  
Author(s):  
Vaibhav Varade ◽  
Gajanan V Honnavar ◽  
P Anjaneyulu ◽  
K P Ramesh ◽  
Reghu Menon
Keyword(s):  
Thin Film ◽  
Raman Spectroscopy ◽  
Transport Properties ◽  
Thin Film Devices

scholarly journals Effect of high energy proton irradiation on MAPbI3 films for space applications observed by micro-Raman spectroscopy

2020 ◽  
Vol 1 (6) ◽  
pp. 2068-2073
Author(s):  
Walter O. Herrera Martínez ◽  
Paula Giudici ◽  
Natalia B. Correa Guerrero ◽  
M. Luján Ibarra ◽  
M. Dolores Perez
Keyword(s):  
Thin Film ◽  
Raman Spectroscopy ◽  
Proton Irradiation ◽  
High Energy ◽  
High Energy Proton ◽  
Space Applications ◽  
Micro Raman Spectroscopy ◽  
Energy Proton

10 MeV proton irradiation of a MAPbI3 thin film causes PbO formation when the surface is exposed to an O2 atmosphere.

Non-Destructive Assessment of Thin Film Stresses and Crystal Qualify of Silicon on Insulator Materials with Raman Spectroscopy

1990 ◽  
Vol 188 ◽  
Author(s):  
Ingrid De Wolf ◽  
Jan Vanhellemont ◽  
Herman E. Maes
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Raman Spectroscopy ◽  
Cross Section ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Micro Raman Spectroscopy ◽  
Transmission Electron ◽  
Non Destructive ◽  
Zone Melt

ABSTRACTMicro Raman spectroscopy (RS) is used to study the crystalline quality and the stresses in the thin superficial silicon layer of Silicon-On-Insulator (SO) materials. Results are presented for SIMOX (Separation by IMplanted OXygen) and ZMR (Zone Melt Recrystallized) substrates. Both as implanted and annealed SIMOX structures are investigated. The results from the as implanted structures are correlated with spectroscopic ellipsometry (SE) and cross-section transmission electron microscopy (TEM) analyses on the same material. Residual stress in ZMR substrates is studied in low- and high temperature gradient regions.

Study of the Redox Process of Poly(5‐amino‐1‐naphthol) Thin Film by In Situ Raman Spectroscopy

1996 ◽  
Vol 143 (7) ◽  
pp. 2116-2119 ◽  
Author(s):  
Malik Mostefai ◽  
Minh‐Chau Pham ◽  
Jean‐Pierre Marsault ◽  
Jean Aubard ◽  
Pierre‐Camille Lacaze
Keyword(s):  
Thin Film ◽  
Raman Spectroscopy ◽  
Redox Process ◽  
In Situ Raman Spectroscopy ◽  
In Situ Raman

Resonance Raman spectroscopy of the B1u region of benzene: Analysis in terms of pseudo‐Jahn–Teller distortion

1992 ◽  
Vol 96 (4) ◽  
pp. 2617-2628 ◽  
Author(s):  
Roseanne J. Sension ◽  
Richard J. Brudzynski ◽  
Shijian Li ◽  
Bruce S. Hudson ◽  
Francesco Zerbetto ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Resonance Raman Spectroscopy ◽  
Resonance Raman ◽  
Teller Distortion ◽  
Jahn Teller ◽  
Jahn Teller Distortion
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