Influence of annealing atmosphere on crystallization of amorphous Si 1-x Ge x thin film by Raman spectroscopy

2018 ◽  
Vol 658 ◽  
pp. 61-65 ◽  
Author(s):  
Nobuaki Makino ◽  
Yukichi Shigeta
Keyword(s):  
Thin Film ◽  
Raman Spectroscopy ◽  
Annealing Atmosphere ◽  
Amorphous Si

Combinatorial (Ba,Sr)TiO3 thin film growth: X-ray diffraction and Raman spectroscopy

2009 ◽  
Vol 106 (3) ◽  
pp. 034108 ◽  
Author(s):  
H. Bouyanfif ◽  
J. Wolfman ◽  
M. El Marssi ◽  
Y. Yuzyuk ◽  
R. Bodeux ◽  
...  
Keyword(s):  
Thin Film ◽  
Raman Spectroscopy ◽  
Film Growth ◽  
Thin Film Growth ◽  
Tio3 Thin Film ◽  
X Ray Diffraction ◽  
X Ray

1/f Noise Behavior in Pentacene Organic Thin Film Transistors

1999 ◽  
Vol 598 ◽  
Author(s):  
P. V. Necliudov ◽  
D. J. Gundlach ◽  
T. N. Jackson ◽  
S. L. Rumyantsev ◽  
M. S. Shur
Keyword(s):  
Thin Film ◽  
Conducting Polymers ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
Drain Current ◽  
Frequency Noise ◽  
Organic Thin Film ◽  
Amorphous Si ◽  
Parameter Values ◽  
Device Noise

ABSTRACTWe studied the low frequency noise in top-contact pentacene Thin Film Transistors (TFTs). The relative spectral noise density of the drain current fluctuations SI/I2 had a form of 1/f noise in the measured frequency range 1Hz - 3.5kHz.Our studies of the noise dependencies on the gate-source VGS and drain-source VDS voltages showed that the dependencies differed from those observed for conducting polymers and resembled those reported for crystalline Si n-MOSFETs.To compare the device noise level with those of other devices and materials, we extracted the Hooge parameter α. In order to calculate the total number of carriers we used a model simulating the device DC characteristics, similar to that for amorphous Si TFTs. The extracted Hooge parameter was 0.04. For an organic material this is an extremely small value, which is three orders of magnitude smaller that the Hooge parameter values reported for conducting polymers and only several times higher than the values for amorphous Si TFTs.

Chemical Bath Deposition of Lead Sulphide (PbS) Thin Film and their Characterization

2013 ◽  
Vol 209 ◽  
pp. 111-115 ◽  
Author(s):  
Sandip V. Bhatt ◽  
M.P. Deshpande ◽  
Bindiya H. Soni ◽  
Nitya Garg ◽  
Sunil H. Chaki
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Raman Spectroscopy ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Excitation Wavelength ◽  
Face Centered Cubic ◽  
Phonon Modes ◽  
Lead Sulphide ◽  
X Ray

Thin film deposition of PbS is conveniently carried out by chemical reactions of lead acetate with thiourea at room temperature. Energy dispersive analysis of X-ray (EDAX), X-ray diffraction (XRD), selected area electron diffraction patterns (SAED), UV-Vis-NIR spectrophotometer, Scanning Electron Microscopy (SEM), Atomic force microscopy (AFM), Photoluminescence (PL) and Raman spectroscopy techniques are used for characterizing thin films. EDAX spectra shows that no impurity is present and XRD pattern indicates face centered cubic structure of PbS thin films. The average crystallite size obtained using XRD is about 15nm calculated using Scherrer’s formula and that determined from Hall-Williamson plot was found to be 18nm. SAED patterns indicate that the deposited PbS thin films are polycrystalline in nature. Blue shift due to quantum confinement was seen from the UV-Vis-NIR absorption spectra of thin film in comparison with bulk PbS. The Photoluminescence spectra obtained for thin film with different excitation sources shows sharp emission peaks at 395nm and its intensity of photoluminescence increases with increasing the excitation wavelength. Raman spectroscopy of deposited thin film was used to study the optical phonon modes at an excitation wavelength of 488nm using (Ar+) laser beam.

Probing disorder and transport properties in polypyrrole thin-film devices by impedance and Raman spectroscopy

2013 ◽  
Vol 46 (36) ◽  
pp. 365306 ◽  
Author(s):  
Vaibhav Varade ◽  
Gajanan V Honnavar ◽  
P Anjaneyulu ◽  
K P Ramesh ◽  
Reghu Menon
Keyword(s):  
Thin Film ◽  
Raman Spectroscopy ◽  
Transport Properties ◽  
Thin Film Devices

scholarly journals Effect of high energy proton irradiation on MAPbI3 films for space applications observed by micro-Raman spectroscopy

2020 ◽  
Vol 1 (6) ◽  
pp. 2068-2073
Author(s):  
Walter O. Herrera Martínez ◽  
Paula Giudici ◽  
Natalia B. Correa Guerrero ◽  
M. Luján Ibarra ◽  
M. Dolores Perez
Keyword(s):  
Thin Film ◽  
Raman Spectroscopy ◽  
Proton Irradiation ◽  
High Energy ◽  
High Energy Proton ◽  
Space Applications ◽  
Micro Raman Spectroscopy ◽  
Energy Proton

10 MeV proton irradiation of a MAPbI3 thin film causes PbO formation when the surface is exposed to an O2 atmosphere.

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