scholarly journals Anharmonicity of lattice vibrations in thin film α-Ga2O3 investigated by temperature dependent Raman spectroscopy

2022 ◽  
Vol 120 (2) ◽  
pp. 022104
Author(s):  
Jona Grümbel ◽  
Rüdiger Goldhahn ◽  
Dae-Woo Jeon ◽  
Martin Feneberg
Keyword(s):  
Thin Film ◽  
Raman Spectroscopy ◽  
Lattice Vibrations ◽  
Temperature Dependent

On the nature of the phase transitions of aluminosilicate perrhenate sodalite

2020 ◽  
Vol 235 (6-7) ◽  
pp. 213-223
Author(s):  
Hilke Petersen ◽  
Lars Robben ◽  
Thorsten M. Gesing
Keyword(s):  
Raman Spectroscopy ◽  
Phase Transitions ◽  
Decomposition Temperature ◽  
Second Phase ◽  
Structure Property ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Two Phase ◽  
Structure Property Relationships ◽  
Heat Capacity Measurements

AbstractThe temperature-dependent structure-property relationships of the aluminosilicate perrhenate sodalite |Na8(ReO4)2|[AlSiO4]6 (ReO4-SOD) were analysed via powder X-ray diffraction (PXRD), Raman spectroscopy and heat capacity measurements. ReO4-SOD shows two phase transitions in the investigated temperature range (13 K < T < 1480 K). The first one at 218.6(1) K is correlated to the transition of dynamically ordered $P\overline{4}3n$ (> 218.6(1 K) to a statically disordered (<218.6(1) K) SOD template in $P\overline{4}3n$. The loss of the dynamics of the template anion during cooling causes an increase of disorder, indicated by an unusual intensity decrease of the 011-reflection and an increase of the Re-O2 bond length with decreasing temperature. Additionally, Raman spectroscopy shows a distortion of the ReO4 anion. Upon heating the thermal expansion of the sodalite cage originated in the tilt-mechanism causes the second phase transition at 442(1) K resulting in a symmetry-increase from $P\overline{4}3n$ to $Pm\overline{3}n$, the structure with the sodalites full framework expansion. Noteworthy is the high decomposition temperature of 1320(10) K.

Temperature-dependent charge injection and transport in pentacene thin-film transistors

2015 ◽  
Vol 30 (11) ◽  
pp. 115020 ◽  
Author(s):  
Dong Wook Kim ◽  
Hyunji Shin ◽  
Ji-Ho Park ◽  
Jaehoon Park ◽  
Jong Sun Choi
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Charge Injection ◽  
Temperature Dependent

scholarly journals Temperature-dependent Raman spectroscopy inBaRuO3systems

2002 ◽  
Vol 65 (23) ◽  
Author(s):  
Y. S. Lee ◽  
T. W. Noh ◽  
J. H. Park ◽  
K.-B. Lee ◽  
G. Cao ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Temperature Dependent

Combinatorial (Ba,Sr)TiO3 thin film growth: X-ray diffraction and Raman spectroscopy

2009 ◽  
Vol 106 (3) ◽  
pp. 034108 ◽  
Author(s):  
H. Bouyanfif ◽  
J. Wolfman ◽  
M. El Marssi ◽  
Y. Yuzyuk ◽  
R. Bodeux ◽  
...  
Keyword(s):  
Thin Film ◽  
Raman Spectroscopy ◽  
Film Growth ◽  
Thin Film Growth ◽  
Tio3 Thin Film ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals Study of Thermometry in Two-Dimensional Sb2Te3 from Temperature-Dependent Raman Spectroscopy

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Manavendra P. Singh ◽  
Manab Mandal ◽  
K. Sethupathi ◽  
M. S. Ramachandra Rao ◽  
Pramoda K. Nayak
Keyword(s):  
Thermal Conductivity ◽  
Raman Spectroscopy ◽  
Temperature Coefficient ◽  
Heat Dissipation ◽  
Peak Position ◽  
Two Dimensional ◽  
Phonon Modes ◽  
Temperature Dependent ◽  
Excellent Candidate ◽  
High Figure

AbstractDiscovery of two-dimensional (2D) topological insulators (TIs) demonstrates tremendous potential in the field of thermoelectric since the last decade. Here, we have synthesized 2D TI, Sb2Te3 of various thicknesses in the range 65–400 nm using mechanical exfoliation and studied temperature coefficient in the range 100–300 K using micro-Raman spectroscopy. The temperature dependence of the peak position and line width of phonon modes have been analyzed to determine the temperature coefficient, which is found to be in the order of 10–2 cm−1/K, and it decreases with a decrease in Sb2Te3 thickness. Such low-temperature coefficient would favor to achieve a high figure of merit (ZT) and pave the way to use this material as an excellent candidate for thermoelectric materials. We have estimated the thermal conductivity of Sb2Te3 flake with the thickness of 115 nm supported on 300-nm SiO2/Si substrate which is found to be ~ 10 W/m–K. The slightly higher thermal conductivity value suggests that the supporting substrate significantly affects the heat dissipation of the Sb2Te3 flake.

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