Defect modeling in skyrmionic ferromagnetic systems

Nuria Del-Valle; Josep Castell-Queralt; Leonardo González-Gómez; Carles Navau

doi:10.1063/5.0072709

Defect modeling in skyrmionic ferromagnetic systems

APL Materials ◽

10.1063/5.0072709 ◽

2022 ◽

Vol 10 (1) ◽

pp. 010702

Author(s):

Nuria Del-Valle ◽

Josep Castell-Queralt ◽

Leonardo González-Gómez ◽

Carles Navau

Keyword(s):

Defect Modeling

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Monte Carlo simulation of ion implantation (3-dimensional) and defect modeling during implantation process

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) ◽

10.1109/iedm.2001.979647 ◽

2002 ◽

Author(s):

D. Li ◽

L. Lin ◽

G. Wang ◽

Y. Chen ◽

G. Shrivastav ◽

...

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Ion Implantation ◽

Defect Modeling ◽

3 Dimensional ◽

Implantation Process

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In Situ Ellipsometric Study and Point Defect Modeling of Passivity on Iron in Borate Buffer Solutions

ECS Meeting Abstracts ◽

10.1149/ma2010-02/15/1256 ◽

2010 ◽

Keyword(s):

Point Defect ◽

Borate Buffer ◽

Defect Modeling ◽

Buffer Solutions ◽

Ellipsometric Study

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TSV-defect modeling based electromagnetic full wave analysis and defect diagnosis method design

2019 20th International Conference on Electronic Packaging Technology(ICEPT) ◽

10.1109/icept47577.2019.245163 ◽

2019 ◽

Author(s):

Yang YANG ◽

Xiaole CUI ◽

Yufeng JIN ◽

Min MIAO ◽

Huan LIU

Keyword(s):

Wave Analysis ◽

Defect Modeling ◽

Full Wave ◽

Full Wave Analysis ◽

Diagnosis Method ◽

Defect Diagnosis

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Defect Modeling Using Fault Tuples

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems ◽

10.1109/tcad.2006.870836 ◽

2006 ◽

Vol 25 (11) ◽

pp. 2450-2464 ◽

Cited By ~ 25

Author(s):

R.D. Blanton ◽

K.N. Dwarakanath ◽

R. Desineni

Keyword(s):

Defect Modeling

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Physical defect modeling for fault insertion in system reliability test

2009 International Test Conference ◽

10.1109/test.2009.5355715 ◽

2009 ◽

Cited By ~ 11

Author(s):

Zhaobo Zhang ◽

Zhanglei Wang ◽

Xinli Gu ◽

Krishnendu Chakrabarty

Keyword(s):

System Reliability ◽

Reliability Test ◽

Defect Modeling

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Defect Modeling and Simulation of 4-H SiC P-N Diode

Materials Science Forum ◽

10.4028/www.scientific.net/msf.338-342.1351 ◽

2000 ◽

Vol 338-342 ◽

pp. 1351-1354 ◽

Cited By ~ 5

Author(s):

N. Keskar ◽

K. Shenai ◽

Philip G. Neudeck

Keyword(s):

Modeling And Simulation ◽

Defect Modeling

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Measurement and defect modeling for a legacy software system

Annals of Software Engineering ◽

10.1007/bf02249047 ◽

1995 ◽

Vol 1 (1) ◽

pp. 95-118 ◽

Cited By ~ 30

Author(s):

Joel Troster ◽

Jeff Tian

Keyword(s):

Software System ◽

Defect Modeling ◽

Legacy Software

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Failure defect modeling — An effective failure analysis simulation tool

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) ◽

10.1109/ipfa.2016.7564286 ◽

2016 ◽

Author(s):

Raymond Mendaros ◽

Arnulfo Evangelista ◽

Jerome Paghasian

Keyword(s):

Failure Analysis ◽

Simulation Tool ◽

Defect Modeling

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The Application of Novel Failure Analysis Techniques and Defect Modeling in Eliminating Short Poly End-Cap Problem in Submicron CMOS Devices

ISTFA 1996: Conference Proceedings from the 22nd International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa1996p0165 ◽

1996 ◽

Author(s):

Y.E. Hong ◽

M.T.T. We

Keyword(s):

Failure Analysis ◽

Failure Mechanism ◽

Leakage Current ◽

Packing Density ◽

Process Change ◽

Defect Modeling ◽

Functional Failure ◽

Analysis Techniques ◽

Post Process ◽

First Time

Abstract As transistor dimension shrinks down below submicron to cater for higher speed and higher packing density, it is very important to characterize the shrinkage carefully to avoid unwanted parametric problems. Leakage current across short poly end-cap is a new failure mechanism that falls in this category and was for the first time, uncovered in submicron multilayered CMOS devices. This mechanism was responsible for a systematic yield problem; identified as the 'centre wafer striping' functional failure problem. This paper presents the advanced failure analysis techniques and defect modeling used to narrow down and identify this new mechanism. Post process change by loosening the marginal poly end-cap criteria eliminated the problem completely.

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