scholarly journals Influence of substrate stress on in-plane and out-of-plane ferroelectric properties of PZT films

2022 ◽  
Vol 131 (1) ◽  
pp. 014101
Author(s):  
Naveen Aruchamy ◽  
Tony Schenk ◽  
Stephanie Girod ◽  
Sebastjan Glinsek ◽  
Emmanuel Defay ◽  
...  
Keyword(s):  
Ferroelectric Properties ◽  
Pzt Films ◽  
Out Of Plane ◽  
Influence Of Substrate

Structures and properties of (001)-oriented Pb(Zr,Ti)O3 films on LaNiO3/Si(001) substrates by pulsed laser deposition

2000 ◽  
Vol 15 (12) ◽  
pp. 2881-2886 ◽  
Author(s):  
Sang Sub Kim ◽  
Tae Soo Kang ◽  
Jung Ho Je
Keyword(s):  
Pulsed Laser Deposition ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Processing Temperature ◽  
Structures And Properties ◽  
Pzt Films ◽  
Out Of Plane ◽  
Mosaic Distribution ◽  
Coherence Lengths

In Pb(Zr0.4Ti0.6)O3 (PZT) (110-nm-thick) films grown on (001)-oriented LaNiO3 (LNO) (50-nm-thick)/Si(001) films by pulsed laser deposition, the microstructures and various structural properties of the PZT and the underlying LNO films were comparatively studied mainly using synchrotron x-ray scattering experiments. Basically, the PZT films resembled the LNO films in microstructure, crystal orientation, and mosaic distribution. The PZT films, however, showed an isotropic structural order (in- and out-of-plane coherence lengths: 18 and 14 nm) in contrast to the anisotropic order of the LNO films (in- and out-of-plane coherence lengths: 5 and 30 nm). The PZT/LNO/Si systems displayed a good hysteresis characteristic (remanent polarization, 11.8 μC/cm2; coercive field, 36.1 kV/cm). We confirmed that oriented PZT films with reasonable ferroelectric properties can be successfully prepared on properly textured LNO films at a relatively low processing temperature.

Electrical Characteristics of Chemical Solution Deposited Nd3+ Doped PZT (53/47) Thin Films in Planar Electrode Configuration

2000 ◽  
Vol 655 ◽  
Author(s):  
S.B. Majumder ◽  
B. Perez ◽  
B. Roy ◽  
A. Martinez ◽  
R.S. Katiyar
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Electrode Configuration ◽  
Electrical Characteristics ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Planar Electrode ◽  
Pzt Films ◽  
Formation Behavior

AbstractElectrical characteristics of ferroelectric thin films in planar electrode configuration are important to characterize these materials for their applications in micro electro mechanical (MEM) and tunable microwave devices. In the present work we have prepared polycrystalline Pb1划3x/2Ndx(Zr0.53Ti0.47)O3 (x = 0.0 to 10.0 at %) thin films on platinized silicon substrate by chemical solution deposition (CSD) technique. The films were characterized in terms of their dielectric and ferroelectric properties by depositing planar interdigital finger electrodes on the surface of the films by electron beam lithography. The capacitance and loss tangent of undoped and 4 at % Nd doped PZT films measured at 100 kHz were found to be 138 pF, 0.033 and 95 pF, 0.019 respectively. Saturated hysteresis loops were obtained in undoped PZT film by applying 100 V across 10 μm electrode separation. Nd doped PZT films on the other hand, electrically shorted at comparatively lower voltage. The electrical characteristics of these films are correlated with their phase formation behavior and microstructural features.

Effect of Pb Content on the Fatigue Properties of D.C. Reactive Sputtering-Derived PZT Thin Films

2006 ◽  
Vol 326-328 ◽  
pp. 613-616
Author(s):  
Dae Jin Yang ◽  
Seong Je Cho ◽  
Jong Oh Kim ◽  
Won Youl Choi
Keyword(s):  
Lead Zirconate Titanate ◽  
Perovskite Phase ◽  
Fatigue Behavior ◽  
Ferroelectric Properties ◽  
Pyrochlore Phase ◽  
Reactive Sputtering ◽  
Lead Zirconate ◽  
Fatigue Properties ◽  
Pzt Thin Films ◽  
Pzt Films

Lead zirconate titanate (Pb(Zr0.48Ti0.52)O3 or PZT) films were grown on platinized silicon wafers (Pt/SiO2/Si) by d.c. reactive sputtering method with multi targets. The Pb content of PZT films has been widely recognized as affecting not only the phase formation and microstructure but also the dielectric and ferroelectric properties. Pb content of PZT films was controlled by the variation of Pb target current. The relation between Pb content and Pb target current was expressed as y=0.89x-11.09. The x and y are Pb target current and Pb content, respectively. The pyrochlore phase was transformed to perovskite phase as Pb content was increased. This phase transformation improved the ferroelectric properties of PZT films. In PZT films with perovskite phase, fatigue properties were not improved with excess Pb content. Fatigue properties of PZT films began to be fatigued after 106 switching cycles and coincided with the typical PZT fatigue behavior. Excess Pb content (Pb vacancy) did not affect the fatigue properties of PZT films.

Correlation of materials and ferroelectric properties of sputtered and sol-gel PZT films

2009 ◽  
Author(s):  
R.X. Fu ◽  
R. Mamazza ◽  
T. S. Zheleva ◽  
K.W. Kirchner ◽  
B. H. Piekarski
Keyword(s):  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pzt Films

Preparation of PbZrxTi1−xO3 Thin Films by KrF Excimer Laser Ablation Technique

1996 ◽  
Vol 433 ◽  
Author(s):  
Hiromitsu Kurogi ◽  
Yukihiko Yamagata ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara ◽  
Bok Yin Tong
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Excimer Laser ◽  
Oxygen Pressure ◽  
Ferroelectric Properties ◽  
Pzt Thin Films ◽  
Excimer Laser Ablation ◽  
Pzt Films ◽  
Krf Excimer Laser ◽  
Laser Ablation Technique

AbstractPb(ZrxTi1−x)O3(PZT) thin films have excellent ferroelectric, optical, piezoelectric and pyroelectric properties. We prepared PZT thin films using the excimer laser ablation technique. A pulsed KrF excimer laser was used to ablate PZT bulk targets. We have studied optimum preparation conditions such as an oxygen pressure, a laser energy fluence and a substrate temperature.In this paper, we investigated the composition, crystallization and ferroelectric properties of the PZT films prepared under various deposition conditions.The X-ray diffraction (XRD) patterns showed that the PZT films prepared on MgO(100) substrates at 600°C and with a laser fluence of 2J/cm2 had a perovskite - pyrochlore mixed structure. The condition of 100 mTorr oxygen pressure provided high quality perovskite films. It is found that the stoichiometric composition of the deposited films is obtained in ambient oxygen of 100˜400 mTorr. The ferroelectric properties of the Pt/PZT/Pt/MgO structure were studied. The capacitance-voltage characteristics and the corresponding hysteresis loop of the dielectric-electric field curve were discussed.We also studied optical emission of the PZT plasma plume to understand quantitative relation between the PZT film quality and the ablation plume plasma. We identified spectral lines originated in Pb, Pb+, Zr, Zr+, Ti, Ti+, PbO and TiO. These spectral intensities have remarkable dependence on the ambient O2 pressure.

Preparation of Pb(Zr0.54Ti0.46)O3 Thin Films on (100)Si Using Textured YBa2Cu3O7−δ and Yttria-Stabilized Zirconia Buffer Layers by Laser Physical Vapor Deposition Technique

1992 ◽  
Vol 285 ◽  
Author(s):  
P. Tiwari ◽  
T. Zheleva ◽  
A. Morimoto ◽  
V.N. Shukla ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Physical Vapor Deposition ◽  
Ferroelectric Properties ◽  
Processing Parameters ◽  
Yttria Stabilized Zirconia ◽  
Buffer Layers ◽  
Stabilized Zirconia ◽  
Vapor Deposition Technique ◽  
Pzt Films ◽  
Physical Vapor Deposition Technique

ABSTRACTWe have fabricated high-quality <001> textured Pb(Zr0.54Ti0.46)O3 (PZT) thin films on (001)Si with interposing <001> textured YBa2Cu3O7−δ (YBCO) and yttria-stabilized zirconia (YSZ) buffer layers using pulsed laser deposition (KrF excimer laser, λ=248 nm, τ=20 nanoseconds). The YBCO layer provides a seed for PZT growth and can also act as an electrode for the PZT films, whereas YSZ provides a diffusion barrier as well as a seed for the growth of YBCO films on (001)Si. These heterostructures were characterized using X-ray diffraction, high-resolution transmission electron microscopy and Rutherford backscattering techniques. The YSZ films were deposited in oxygen ambient (∼9X10−4 torr) at 775°C on (001)Si substrate having <001>YSZ// <001>Si texture. The YBCO thin films were deposited in-situ in oxygen ambient (200 mtorr) at 650°C. Temperature and oxygen ambient for the PZT deposition were optimized to be 530°C and 0.4–0.6 torr, respectively. The laser fluence to deposit this multistructure was 2.5–5.0 J/cm2. The <001> textured perovskite PZT films showed a dielectric constant of 800–1000, a saturation polarization of 37.81 μC/cm2, remnant polarization of 24.38 μC/cm2 and a coersive field of 125 kV/cm. The effects of processing parameters on microstructure and ferroelectric properties of PZT films and device implications of these structures are discussed.

SYNTHESIS OF CoFe2O4/Pb(Zr0.53Ti0.47)O3 MULTIFERROIC COMPOSITE THICK FILMS BY LOW-SINTERING-TEMPERATURE SCREEN PRINTING METHOD

2011 ◽  
Vol 01 (01) ◽  
pp. 119-125 ◽  
Author(s):  
W. CHEN ◽  
C. X. HUANG ◽  
T. S. YAN ◽  
W. ZHU ◽  
Z. P. LI ◽  
...  
Keyword(s):  
Screen Printing ◽  
Sintering Temperature ◽  
Ferroelectric Properties ◽  
Thick Films ◽  
Electron Microscopic ◽  
Screen Printing Method ◽  
Pzt Films ◽  
Multiferroic Composite ◽  
Low Sintering Temperature ◽  
Printing Method

CoFe 2 O 4/ Pb ( Zr 0.53 Ti 0.47) O 3 (abbreviated as CFO/PZT) multiferroic composite thick films were successfully fabricated on alumina substrate with gold bottom electrode by screen printing method at a low-sintering temperature. The processing included the modification and dispersion of ferromagnetic CFO powder and ferroelectric PZT powder, the preparation of uniform pastes, and the selection of proper annealing temperature for composite thick films. Transmission electron microscopic pictures (TEM) indicated the submicron meter of particles size for both CFO and PZT particles. After annealing at 900°C for 1 h in air, tape test confirmed the quality of multiferroic thick films as well as pure CFO and PZT films. X-ray diffraction (XRD) showed a coexistence of CFO and PZT phases; furthermore, a smooth surface was observed through scanning electron microscopic (SEM) pictures along with the sharp cross-sectional picture, indicative of 100 μm of film thickness. Ferromagnetic and ferroelectric properties were observed in CFO/PZT films simultaneously at room temperature. Compared with the reported CFO/PZT multiferrroic thin films, the present ferromagnetic property was closing to that of the chemical sol-gel synthesized film and even that from the physical pulsed laser deposition technique. However, the ferroelectric property showed a degenerated behavior, possible reasons for this was discussed and further optimization was also proposed for the potential multifunctional application.

Effect of Growth Conditions on Structural and Electrical Properties of Pb(ZrxTi1−x)O3 layers grown by peroxide MBE

2007 ◽  
Vol 1034 ◽  
Author(s):  
Natalia Izyumskaya ◽  
V. Avrutin ◽  
X. Gu ◽  
B. Xiao ◽  
S. Chevtchenko ◽  
...  
Keyword(s):  
Hydrogen Peroxide ◽  
Phase Composition ◽  
Electrical Properties ◽  
Ferroelectric Properties ◽  
Field Measurements ◽  
Growth Conditions ◽  
Second Phase ◽  
Conductive Atomic Force Microscopy ◽  
Structural And Electrical Properties ◽  
Pzt Films

AbstractPb(ZrxTi1−x)O3 (PZT) films were grown by molecular beam epitaxy using hydrogen peroxide as a source of reactive oxygen. Phase composition as well as structural and electrical properties of the films were studied by x-ray diffractometry, scanning and transmission electron microscopy, conductive atomic force microscopy, and electrical (I-V and polarization-field) measurements. The hydrogen peroxide pressure was found to control the phase composition of the films. Excess peroxide leads to PbO inclusions in PZT layers, whereas deficiency results in the TiO2 or the ZrO2 phase. The second-phase inclusions can be responsible for high leakage current in the films. Precise control over the peroxide pressure is imperative for single-phase PZT films with good ferroelectric properties.

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