Kinetics of cleaning the surface of titanium from the embrittled part of the oxide layer under conditions of non-oxidative annealing

2021 ◽  
Author(s):  
Alexey Bulkov ◽  
Vladimir Peshkov ◽  
Vladimir Selivanov ◽  
George Selivanov
Keyword(s):  
Oxide Layer ◽  
Oxidative Annealing ◽  
Kinetics Of

[O32] Thermodynamics and kinetics of interfacial interactions between oxide layer on a steel surface and liquid Na2O- SiO2- B2O3- TiO2 glass

Calphad ◽  
2015 ◽  
Vol 51 ◽  
pp. 355
Author(s):  
Rayisa Voytovych ◽  
Fiqiri Hodaj ◽  
Marie-José Cornu ◽  
Alexey Koltsov ◽  
Cécile Pesci
Keyword(s):  
Oxide Layer ◽  
Steel Surface ◽  
Interfacial Interactions ◽  
Thermodynamics And Kinetics ◽  
Kinetics Of

The interaction of oxygen with clean metal surfaces

1955 ◽  
Vol 227 (1170) ◽  
pp. 387-399 ◽  
Keyword(s):  
Oxide Layer ◽  
Oxygen Adsorption ◽  
Single Site ◽  
Rate Expression ◽  
Hydrogen Form ◽  
Metal Atoms ◽  
Kinetics Of ◽  
Clean Metal ◽  
Cu And Zn ◽  
Rapid Adsorption

Isobars for the adsorption of O 2 , H 2 and CO on evaporated films of Rh, Mo, W and Fe, of Ch and CO on Ta, Pt and Pd, and of O 2 on Cu, Al and Zn have been obtained. On Rh, Mo and W the rapid adsorption of O 2 and H 2 at -183° C results in formation of monolayers with one atom per surface atom. On Ta, Pt, Pd, Cu, Al and Zn oxygen, and on Fe hydrogen form similar monolayers, but on Fe oxygen forms several layers of oxide. On Rh, Mo and possibly Ta the fast CO chemisorption corresponds to a two-site mechanism; on W and Fe it lies between that for a single and a two-site mechanism; on Pt and Pd single-site adsorption may take place. Kinetics of slow oxygen uptakes have been followed on Rh, Mo, W, Ta, Fe, Cu and Zn. With Rh, Mo, W, Ta and Zn it is believed that formation of the first oxide layer has been observed, and the rate expression is velocity ∝√{ p ) e -∝ v / RT , where v is the adsorbed volume and ∝ is a constant. The suggested mechanism is interchange of adsorbed oxygen atoms with underlying metal atoms, whereby metal atoms are exposed for further oxygen adsorption. On Cu and Fe formation of up to six and ten oxide layers respectively have been observed, and the rate expressions (u ∝ p 0.75 / v 2 and u ∝ p 0.2 e ∝'/ v ) have been interpreted in terms of the theory of Cabrera & Mott (1948).

A Nonvolatile MOSFET Memory Device Based on Mobile Protons in the Gate Dielectric

1998 ◽  
Vol 510 ◽  
Author(s):  
K. Vanheusden ◽  
W.L. Warren ◽  
D.M. Fleetwood ◽  
R.A.B. Devine ◽  
B.L. Draper ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Hydrogen Diffusion ◽  
Gate Dielectric ◽  
Memory Device ◽  
Flat Band ◽  
Generation Process ◽  
Alkali Ions ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Kinetics Of

AbstractEver since the introduction of the metal-oxide-silicon field-effect-transistor (MOSFET), the nature of mobile and trapped charge in the oxide layer has been studied in great detail. For example, contamination with alkali ions such as sodium, causing instability of the flat-band voltage, was a major concern in the early days of MOS fabrication. Another SiO2 impurity of particular interest is hydrogen, because of its beneficial property of passivating charge traps. In this work we show that annealing of Si/SiO2/Si structures in forming gas (Ar:H2; 95:5) above 400 °C can introduce mobile H+ ions into the SiO2 layer. These mobile protons are confined within the oxide layer, and their space-charge distribution is well controllable and easily rearrangeable by applying a gate bias, making them potentially useful for application in a reliable nonvolatile MOSFET memory device. We present speed, retention, endurance, and radiation tolerance data showing that this non-volatile memory technology can be competitive with existing Si-based non-volatile memory technologies such as Flash.The chemical kinetics of mobile-proton reactions in the SiO2 film are also analyzed in greater detail. Our data show that the initial buildup of mobile protons during hydrogen annealing is limited by the rate of lateral hydrogen diffusion into the buried SiO2 films. The final density of mobile protons is determined by the cooling rate which terminates the annealing process and, in the case of subsequent anneals, by the temperature of the final anneal. To explain the observations, we propose a dynamical equilibrium model. Based on these insights, the incorporation of the proton generation process into standard semiconductor process flows is discussed.

Kinetics of Formation of Oxide Layer on Zinc

1952 ◽  
Vol 20 (4) ◽  
pp. 764-764 ◽  
Author(s):  
Walter J. Moore
Keyword(s):  
Oxide Layer ◽  
Kinetics Of Formation ◽  
Kinetics Of

Bonding Structure of Ultrathin Oxides on Si(110) Surface

2008 ◽  
Vol 1074 ◽  
Author(s):  
Yoshihisa Yamamoto ◽  
Hideaki Togashi ◽  
Atsushi Kato ◽  
Maki Suemitsu ◽  
Yuzuru Narita ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Oxide Layer ◽  
Oxidation Kinetics ◽  
Compressive Strain ◽  
Oxidation States ◽  
Oxide Layer Thickness ◽  
Bonding Structure ◽  
Ultrathin Oxides ◽  
Thermal Oxidation Kinetics ◽  
Kinetics Of

ABSTRACTThe thermal oxidation kinetics of Si(110) surface up to oxide layer thickness of 1 ML has been investigated by real-time monitoring of chemical shifted in the Si 2p core-level photoemission using synchrotron radiation. The uptake profiles of every Si oxidation states (Sin+: n = 1 − 4) indicate that the top surface Si(110) oxidation proceeds through a two-step oxidation pathway via Si2+ state, just like the Si(001) surface. In contrast to the Si(001) oxidation, however, Si3+ state is always more abundant than Si4+ state during oxidation. This is related to occurrence of imperfect oxidation of this surface, most probably due to accumulation of compressive strain during oxidation.

Si Wafer Bonding: Structural Features of the Interface

2009 ◽  
Vol 156-158 ◽  
pp. 85-90 ◽  
Author(s):  
V.I. Vdovin ◽  
N.D. Zakharov ◽  
Eckhard Pippel ◽  
P. Werner ◽  
M.G. Milvidskii ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Wafer Bonding ◽  
Lattice Mismatch ◽  
Twist Angle ◽  
Structural Features ◽  
High Temperature Annealing ◽  
Bonded Interface ◽  
Transmission Electron ◽  
Kinetics Of ◽  
Si Wafer

Kinetics of oxide layer dissolution and atomic structure of Si-Si interface in Si wafer bonded structures have been investigated by transmission electron microscopy. Samples of Si(001)/SiO2/Si(001) and Si(110)/SiO2/Si(001) structures were fabricated by direct hydrophilic wafer bonding of 200 mm wafers followed by high temperature annealing. It is found that the decomposition rate of oxide layer and formation of Si-Si bonded interface depends very much on lattice mismatch and twist angle.

Kinetics of the oxidation of Ba2 YCu3Ox ceramics

1988 ◽  
Vol 3 (4) ◽  
pp. 619-625 ◽  
Author(s):  
H. M. O'Bryan ◽  
P. K. Gallagher
Keyword(s):  
High Temperature ◽  
Oxide Layer ◽  
Large Volume ◽  
Linear Relation ◽  
Oxygen Stoichiometry ◽  
Gravimetric Analysis ◽  
X Ray ◽  
Kinetics Of ◽  
Volume Decrease

The kinetics of the oxidation of dense and porous samples of Ba2 YCu3Ox ceramic have been determined by gravimetric analysis at 400–700 °C. At 600 °C and above, the rate decreases as the thickness of the oxidized layer increases. At 500 °C and below, the kinetics show a linear relation that indicates that the oxidized layer does not protect the ceramic. Dilatometric, microscopic, and high-temperature x-ray data suggest that fractures in the oxide layer at the lower temperatures are caused by the large volume decrease that accompanies the change in oxygen stoichiometry.

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