Current-induced perpendicular magnetization switching without external magnetic field in gate-induced asymmetric structure

2021 ◽  
Vol 119 (20) ◽  
pp. 202402
Author(s):  
Kento Hasegawa ◽  
Tomohiro Koyama ◽  
Daichi Chiba
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Asymmetric Structure ◽  
Magnetization Switching ◽  
Perpendicular Magnetization

scholarly journals Controllable field-free switching of perpendicular magnetization through bulk spin-orbit torque in symmetry-broken ferromagnetic films

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Xuejie Xie ◽  
Xiaonan Zhao ◽  
Yanan Dong ◽  
Xianlin Qu ◽  
Kun Zheng ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Domain Walls ◽  
Single Layer ◽  
Ferromagnetic Film ◽  
Effective Field ◽  
Composition Gradient ◽  
Spin Orbit ◽  
Interlayer Exchange Coupling ◽  
Magnetization Switching ◽  
Perpendicular Magnetization

AbstractProgrammable magnetic field-free manipulation of perpendicular magnetization switching is essential for the development of ultralow-power spintronic devices. However, the magnetization in a centrosymmetric single-layer ferromagnetic film cannot be switched directly by passing an electrical current in itself. Here, we demonstrate a repeatable bulk spin-orbit torque (SOT) switching of the perpendicularly magnetized CoPt alloy single-layer films by introducing a composition gradient in the thickness direction to break the inversion symmetry. Experimental results reveal that the bulk SOT-induced effective field on the domain walls leads to the domain walls motion and magnetization switching. Moreover, magnetic field-free perpendicular magnetization switching caused by SOT and its switching polarity (clockwise or counterclockwise) can be reversibly controlled in the IrMn/Co/Ru/CoPt heterojunctions based on the exchange bias and interlayer exchange coupling. This unique composition gradient approach accompanied with electrically controllable SOT magnetization switching provides a promising strategy to access energy-efficient control of memory and logic devices.

scholarly journals Magnetization switching in ferromagnets by adsorbed chiral molecules without current or external magnetic field

2017 ◽  
Vol 8 (1) ◽  
Author(s):  
Oren Ben Dor ◽  
Shira Yochelis ◽  
Anna Radko ◽  
Kiran Vankayala ◽  
Eyal Capua ◽  
...  
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Chiral Molecules ◽  
Magnetization Switching

scholarly journals The control of the crucial current in current-induced magnetization switching with an external magnetic field

2008 ◽  
Vol 57 (4) ◽  
pp. 2427
Author(s):  
Zhang Lei ◽  
Ren Min ◽  
Hu Jiu-Ning ◽  
Deng Ning ◽  
Chen Pei-Yi
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Magnetization Switching

RECOIL IMPLANTATION MÖSSBAUER EXPERIMENT ON 57Fe IN Ge IN THE PRESENCE OF AN EXTERNAL MAGNETIC FIELD

1980 ◽  
Vol 41 (C1) ◽  
pp. C1-445-C1-445
Author(s):  
G. Langouche ◽  
N. S. Dixon ◽  
L. Gettner ◽  
S. S. Hanna
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Recoil Implantation
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