scholarly journals Coherent Subnanosecond Switching of Perpendicular Magnetization by the Fieldlike Spin-Orbit Torque without an External Magnetic Field

2015 ◽  
Vol 3 (6) ◽  
Author(s):  
William Legrand ◽  
Rajagopalan Ramaswamy ◽  
Rahul Mishra ◽  
Hyunsoo Yang
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Spin Orbit ◽  
Perpendicular Magnetization

scholarly journals Controllable field-free switching of perpendicular magnetization through bulk spin-orbit torque in symmetry-broken ferromagnetic films

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Xuejie Xie ◽  
Xiaonan Zhao ◽  
Yanan Dong ◽  
Xianlin Qu ◽  
Kun Zheng ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Domain Walls ◽  
Single Layer ◽  
Ferromagnetic Film ◽  
Effective Field ◽  
Composition Gradient ◽  
Spin Orbit ◽  
Interlayer Exchange Coupling ◽  
Magnetization Switching ◽  
Perpendicular Magnetization

AbstractProgrammable magnetic field-free manipulation of perpendicular magnetization switching is essential for the development of ultralow-power spintronic devices. However, the magnetization in a centrosymmetric single-layer ferromagnetic film cannot be switched directly by passing an electrical current in itself. Here, we demonstrate a repeatable bulk spin-orbit torque (SOT) switching of the perpendicularly magnetized CoPt alloy single-layer films by introducing a composition gradient in the thickness direction to break the inversion symmetry. Experimental results reveal that the bulk SOT-induced effective field on the domain walls leads to the domain walls motion and magnetization switching. Moreover, magnetic field-free perpendicular magnetization switching caused by SOT and its switching polarity (clockwise or counterclockwise) can be reversibly controlled in the IrMn/Co/Ru/CoPt heterojunctions based on the exchange bias and interlayer exchange coupling. This unique composition gradient approach accompanied with electrically controllable SOT magnetization switching provides a promising strategy to access energy-efficient control of memory and logic devices.

SPIN-SPLITTING OF THE BOUND POLARON'S GROUND STATE BINDING ENERGY INDUCED BY THE RASHBA SPIN–ORBIT INTERACTION UNDER THE PERPENDICULAR MAGNETIC FIELD

2008 ◽  
Vol 22 (12) ◽  
pp. 1923-1932
Author(s):  
JIA LIU ◽  
ZI-YU CHEN
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Binding Energy ◽  
Ground State ◽  
Spin Splitting ◽  
Perpendicular Magnetic Field ◽  
Spin Orbit ◽  
Ground State Binding Energy ◽  
Bound Polaron ◽  
Rashba Spin

The influence of a perpendicular magnetic field on a bound polaron near the interface of a polar–polar semiconductor with Rashba effect has been investigated. The material is based on a GaAs / Al x Ga 1-x As heterojunction and the Al concentration varying from 0.2 ≤ x ≤ 0.4 is the critical value below which the Al x Ga 1-x As is a direct band gap semiconductor.The external magnetic field strongly altered the ground state binding energy of the polaron and the Rashba spin–orbit (SO) interaction originating from the inversion asymmetry in the heterostructure splitting of the ground state binding energy of the bound polaron. How the ground state binding energy will be with the change of the external magnetic field, the location of a single impurity and the electron area density have been shown in this paper, taking into account the SO coupling. The contribution of the phonons are also considered. It is found that the spin-splitting states of the bound polaron are more stable, and, in the condition of weak magnetic field, the Zeeman effect can be neglected.

Influence of magnetic field and Rashba spin–orbit coupling on strong-coupling magnetopolarons in quantum disks

2014 ◽  
Vol 28 (27) ◽  
pp. 1450185
Author(s):  
Wei Xin ◽  
Chao Han ◽  
Eerdunchaolu
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Interaction Energy ◽  
Ground State ◽  
State Interaction ◽  
Orbit Coupling ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Phonon Interaction ◽  
Rashba Spin

On the basis of Lee–Low–Pines (LLP) unitary transformation, the influence of external magnetic field, Rashba spin–orbit coupling and quantum size effect on the ground-state interaction energy of strong-coupling magnetopolarons in quantum disks (QDs) is studied by using the Tokuda improved linear combine operator method. The results show that the ground-state interaction energy of magnetopolarons consists of four parts: the energy caused by the confinement potential of QDs, interaction energy between the electron and external magnetic field, electron and longitudinal-optical (LO) phonon interaction energy and additional term of Rashba effect originating from phonons. The electron–LO phonon interaction energy Ee- ph and additional term of Rashba effect are always negative; the absolute value |Ee- ph | increases with increasing transverse confinement strength ω0, cyclotron frequency of external magnetic field ωc and electron–LO phonon coupling strength α, but decreases with increasing the thickness of QDs L; the state properties of magnetopolarons are closely linked with the sign of the ground-state interaction energy of magnetopolarons E int and change of E int with ωc, ω0, α and L. In addition, the vibration frequency of magnetopolarons λ increases with increasing ωc, ω0 and α, but decreases with increasing L. For the ground state of magnetopolarons in QDs, the electron–LO phonon interaction plays a significant role, meanwhile, the influence of Rashba spin–orbit coupling effect cannot be ignored.

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