scholarly journals Electrical properties of low-temperature SiO2 thin films prepared by plasma-enhanced atomic layer deposition with different plasma times

AIP Advances ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 115126
Author(s):  
Taehyeon Kim ◽  
Changyong Oh ◽  
So Hee Park ◽  
Joo Won Lee ◽  
Sang Ik Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

scholarly journals Structural, Optical and Electrical Properties of HfO2 Thin Films Deposited at Low-Temperature Using Plasma-Enhanced Atomic Layer Deposition

Materials ◽  
2020 ◽  
Vol 13 (9) ◽  
pp. 2008 ◽  
Author(s):  
Kyoung-Mun Kim ◽  
Jin Sub Jang ◽  
Soon-Gil Yoon ◽  
Ju-Young Yun ◽  
Nak-Kwan Chung
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Smooth Surface ◽  
Optical Band Gap ◽  
Atomic Layer ◽  
Refractive Indices ◽  
Optical And Electrical Properties ◽  
Layer Deposition

HfO2 was deposited at 80–250 °C by plasma-enhanced atomic layer deposition (PEALD), and properties were compared with those obtained by using thermal atomic layer deposition (thermal ALD). The ALD window, i.e., the region where the growth per cycle (GPC) is constant, shifted from high temperatures (150–200 °C) to lower temperatures (80–150 °C) in PEALD. HfO2 deposited at 80 °C by PEALD showed higher density (8.1 g/cm3) than those deposited by thermal ALD (5.3 g/cm3) and a smooth surface (RMS Roughness: 0.2 nm). HfO2 deposited at a low temperature by PEALD showed decreased contaminants compared to thermal ALD deposited HfO2. Values of refractive indices and optical band gap of HfO2 deposited at 80 °C by PEALD (1.9, 5.6 eV) were higher than those obtained by using thermal ALD (1.7, 5.1 eV). Transparency of HfO2 deposited at 80 °C by PEALD on polyethylene terephthalate (PET) was high (> 84%). PET deposited above 80 °C was unable to withstand heat and showed deformation. HfO2 deposited at 80 °C by PEALD showed decreased leakage current from 1.4 × 10−2 to 2.5 × 10−5 A/cm2 and increased capacitance of approximately 21% compared to HfO2 using thermal ALD. Consequently, HfO2 deposited at a low temperature by PEALD showed improved properties compared to HfO2 deposited by thermal ALD.

Electrical Properties of Srta2O6 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition (Peald)

2001 ◽  
Vol 685 ◽  
Author(s):  
Won-Jae Lee ◽  
Chang-Ho Shin ◽  
In-Kyu You ◽  
Il-Suk Yang ◽  
Sang-Ouk Ryu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Layer Deposition ◽  
Current Characteristics

AbstractThe SrTa2O6 (STO) thin films were prepared by plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant sources, Sr[Ta(C2H5O)5(C4H10NO)]2 {Strontium bis-[tantalum penta-ethoxide dimethyllaminoethoxide]; Sr(Ta(OEt)5▪dmae)2} and O2plasma. It was observed that the uniform and conformal STO thin films were successfully deposited using PEALD and the film thickness per cycle was saturated at about 0.8 nm at 300°C. Electrical properties of SrTa2O6 (STO) thin films prepared on Pt/SiO2/Si substrates with annealing temperatures have been investigated. While the grain size and dielectric constant of STO films increased with increasing annealing temperature, the leakage current characteristics of STO films slightly deteriorated. The leakage current density of a 40nm-STO film was about 5×10−8A/cm2 at 3V.

Al 2 O 3 Thin Films Prepared by a Combined Thermal‐Plasma Atomic Layer Deposition Process at Low Temperature for Encapsulation Applications

2019 ◽  
Vol 217 (8) ◽  
pp. 1900237
Author(s):  
Zhen Zhu ◽  
Saoussen Merdes ◽  
Oili M. E. Ylivaara ◽  
Kenichiro Mizohata ◽  
Mikko J. Heikkilä ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Thermal Plasma ◽  
Atomic Layer ◽  
Deposition Process ◽  
Atomic Layer Deposition Process ◽  
Layer Deposition

scholarly journals Area‐Selective Growth of HfS 2 Thin Films via Atomic Layer Deposition at Low Temperature

2020 ◽  
Vol 7 (23) ◽  
pp. 2001493
Author(s):  
Yuanyuan Cao ◽  
Tobias Wähler ◽  
Hyoungwon Park ◽  
Johannes Will ◽  
Annemarie Prihoda ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Selective Growth ◽  
Layer Deposition

scholarly journals Nanocrystalline Ferroelectric BiFeO3 Thin Films by Low-Temperature Atomic Layer Deposition

2015 ◽  
Vol 27 (18) ◽  
pp. 6322-6328 ◽  
Author(s):  
Mariona Coll ◽  
Jaume Gazquez ◽  
Ignasi Fina ◽  
Zakariya Khayat ◽  
Andy Quindeau ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Bifeo3 Thin Films ◽  
Layer Deposition

Enhanced Electrical Properties of SrTiO3 Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

2011 ◽  
Vol 14 (10) ◽  
pp. G45 ◽  
Author(s):  
C. J. Yim ◽  
S. U. Kim ◽  
Y. S. Kang ◽  
M.-H. Cho ◽  
D.-H. Ko
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

Low-Temperature Atomic Layer Deposition of Low-Resistivity Copper Thin Films Using Cu(dmap)2 and Tertiary Butyl Hydrazine

2017 ◽  
Vol 29 (15) ◽  
pp. 6502-6510 ◽  
Author(s):  
Katja Väyrynen ◽  
Kenichiro Mizohata ◽  
Jyrki Räisänen ◽  
Daniel Peeters ◽  
Anjana Devi ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tertiary Butyl ◽  
Low Resistivity ◽  
Layer Deposition
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