Optical phonon limited electron mobility in ZnO nanowires wrapped by MgZnO shells

2022 ◽  
Vol 131 (2) ◽  
pp. 025104
Author(s):  
Z. X. Xue ◽  
Y. Qu ◽  
S. L. Ban
Keyword(s):  
Optical Phonon ◽  
Electron Mobility ◽  
Zno Nanowires

POLAR-OPTICAL PHONON-LIMITED ELECTRON MOBILITY IN QUANTUM WIRES

2006 ◽  
Vol 20 (21) ◽  
pp. 3015-3025 ◽  
Author(s):  
ARSHAK L. VARTANIAN
Keyword(s):  
Optical Phonon ◽  
Electron Mobility ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Dielectric Medium ◽  
Polar Optical Phonon ◽  
Wire Radius ◽  
Phonon Confinement ◽  
Intersubband Transitions ◽  
Low Field

The electron mobility conditioned by confined and interface polar-optical phonons for a quasi-one-dimensional cylindrical quantum wire embedded in a dielectric medium is investigated analytically. It is shown that the inclusion of the polar optical phonon confinement effects is crucial for accurate calculation of the low-field electron mobility in quantum wire. Taking into account the inelasticity of the electron-polar optical phonon interaction, the electron mobility is derived by a method which was successfully applied in three- and quasi-two-dimensional cases. The contribution of intersubband transitions to electron mobility for the Cd 0.35 Zn 0.65 Se quantum wire embedded in the CdZn dielectric medium is estimated. The extremums on the mobility dependences on wire radius and Cd concentration are obtained.

scholarly journals The size-quantized oscillations of the optical-phonon-limited electron mobility in AlN/GaN/AlN nanoscale heterostructures

2007 ◽  
Vol 92 ◽  
pp. 012022 ◽  
Author(s):  
E P Pokatilov ◽  
D L Nika ◽  
A S Askerov ◽  
N D Zincenco ◽  
A A Balandin
Keyword(s):  
Optical Phonon ◽  
Electron Mobility

Localized suppression of longitudinal-optical-phonon–exciton coupling in bent ZnO nanowires

2010 ◽  
Vol 21 (44) ◽  
pp. 445706 ◽  
Author(s):  
Bin Yan ◽  
Rui Chen ◽  
Weiwei Zhou ◽  
Jixuan Zhang ◽  
Handong Sun ◽  
...  
Keyword(s):  
Optical Phonon ◽  
Longitudinal Optical ◽  
Zno Nanowires ◽  
Longitudinal Optical Phonon ◽  
Exciton Coupling

scholarly journals Determination of the LO phonon energy by using electronic and optical methods in AlGaN/GaN

Open Physics ◽  
2012 ◽  
Vol 10 (2) ◽  
Author(s):  
Ozlem Celik ◽  
Engin Tiras ◽  
Sukru Ardali ◽  
Sefer Lisesivdin ◽  
Ekmel Ozbay
Keyword(s):  
Raman Spectroscopy ◽  
Hall Effect ◽  
Optical Phonon ◽  
Electron Mobility ◽  
Phonon Scattering ◽  
Impurity Scattering ◽  
Interface Roughness ◽  
Polar Optical Phonon ◽  
Optical Phonon Scattering ◽  
Hall Effect Measurements

AbstractThe longitudinal optical (LO) phonon energy in AlGaN/GaN heterostructures is determined from temperature-dependent Hall effect measurements and also from Infrared (IR) spectroscopy and Raman spectroscopy. The Hall effect measurements on AlGaN/GaN heterostructures grown by MOCVD have been carried out as a function of temperature in the range 1.8-275 K at a fixed magnetic field. The IR and Raman spectroscopy measurements have been carried out at room temperature. The experimental data for the temperature dependence of the Hall mobility were compared with the calculated electron mobility. In the calculations of electron mobility, polar optical phonon scattering, ionized impurity scattering, background impurity scattering, interface roughness, piezoelectric scattering, acoustic phonon scattering and dislocation scattering were taken into account at all temperatures. The result is that at low temperatures interface roughness scattering is the dominant scattering mechanism and at high temperatures polar optical phonon scattering is dominant.

Analytical Theory of Electron Mobility and Drift Velocity in GaN

1996 ◽  
Vol 449 ◽  
Author(s):  
B. L. Gelmont ◽  
M. S. Shur ◽  
M. Stroscio
Keyword(s):  
Electric Fields ◽  
Drift Velocity ◽  
Optical Phonon ◽  
Electron Mobility ◽  
Phonon Scattering ◽  
Electron Gas ◽  
Transport Equations ◽  
Polar Optical Phonon ◽  
Two Dimensional ◽  
Optical Phonon Scattering

ABSTRACTWe derive balance transport equations for the electron mobility and drift velocity, which are applicable at any degeneracy of the electron gas. These equations account for the polar optical phonon scattering and ionized impurity scattering and include the effects of screening. These equations are valid only for very high concentrations (above 1019 cm-3 for GaN). However, the comparison with the results of Monte Carlo simulations shows that they fairly accurately reproduce the field-velocity curves in GaN in moderate electric fields (up to 100 kV/cm). The comparison with the electron mobility calculated using the two-step model [1] shows a much larger difference but allows us to illustrate the trends in mobility dependencies caused by electron-electron collisions. We also derive the balance transport equations accounting for the polar optical phonon scattering in a two-dimensional electron gas. The calculations based on these equations, show that the unscreened polar optical scattering mobility is smaller in the two-dimensional gas than in the bulk intrinsic semiconductor and that the mobility decreases with the decrease of the quantum well thickness.

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