Uniform deposition method of monodispersed SiO2 nanoparticles on a 300-mm Si wafer surface

2021 ◽  
Vol 92 (11) ◽  
pp. 113704
Author(s):  
Seungjae Lee ◽  
Seulgi Choi ◽  
Yujin Cho ◽  
Haerim Oh ◽  
Seung-Ki Chae ◽  
...  
Keyword(s):  
Sio2 Nanoparticles ◽  
Wafer Surface ◽  
Deposition Method ◽  
Uniform Deposition ◽  
Si Wafer

New Measurement Concept of Nanometer-Level Defects on Si Wafer Surface by Using Micro Contact Sensor

2012 ◽  
Vol 497 ◽  
pp. 137-141 ◽  
Author(s):  
Wen Jian Lu ◽  
Yuki Shimizu ◽  
Wei Gao
Keyword(s):  
Temperature Rise ◽  
Electric Circuit ◽  
Frictional Heat ◽  
Wafer Surface ◽  
Fem Model ◽  
Element Simulation ◽  
Type Contact ◽  
Contact Sensor ◽  
Measurement Concept ◽  
Si Wafer

A thermal-type contact sensor was proposed to detect small defects, the heights of which are less than 16 nm, on the wafer surface. The feasibility of the contact sensor, which detects frictional heat generated at the contact, was theoretically investigated focusing on the temperature rise of the sensor element. Simulation results with both the simple model of heat transfer and the FEM model showed that the expected temperature rise of the contact sensor is enough to be detected by the conventional electric circuit.

A Study on Statistical Analysis of Si-Wafer Polishing Process for the Optimum Polishing Condition

2008 ◽  
Vol 389-390 ◽  
pp. 493-497 ◽  
Author(s):  
Sung Chul Hwang ◽  
Jong Koo Won ◽  
Jung Taik Lee ◽  
Eun Sang Lee
Keyword(s):  
Surface Roughness ◽  
Statistical Analysis ◽  
Process Parameters ◽  
Wafer Surface ◽  
Wafer Polishing ◽  
Ultra Precision ◽  
Important Processing ◽  
The Many ◽  
Selection Of ◽  
Si Wafer

As the level of Si-wafer surface directly affects device line-width capability, process latitude, yield, and throughput in fabrication of microchips, it needs to have ultra precision surface and flatness. Polishing is one of the important processing having influence on the surface roughness in manufacturing of Si-wafers. The surface roughness in wafer polishing is mainly affected by the many process parameters. For decreasing the surface roughness, the control of polishing parameters is very important. In this paper, the optimum condition selection of ultra precision wafer polishing and the effect of polishing parameters on the surface roughness were evaluated by the statistical analysis of the process parameters.

scholarly journals Observation of Oxide-film Step with Very Small Height on Si Wafer Surface Using a Laser Scattering Method

2006 ◽  
Vol 72 (11) ◽  
pp. 1363-1367
Author(s):  
Haruyuki INOUE ◽  
Toshihiko KATAOKA ◽  
Yoshihiro NAGAO ◽  
Yasushi OSHIKANE ◽  
Motohiro NAKANO ◽  
...  
Keyword(s):  
Oxide Film ◽  
Wafer Surface ◽  
Scattering Method ◽  
Laser Scattering ◽  
Small Height ◽  
Si Wafer

The Study on the Surface Abrasion about Wafer Final Polishing

2009 ◽  
Vol 626-627 ◽  
pp. 147-152
Author(s):  
Jong Koo Won ◽  
Jung Taik Lee ◽  
Eun Sang Lee
Keyword(s):  
Study Design ◽  
Temperature Sensor ◽  
Processing Time ◽  
Processing Condition ◽  
Major Influence ◽  
Wafer Surface ◽  
Head Unit ◽  
Wafer Polishing ◽  
Machining Speed ◽  
Si Wafer

Polishing is one of the important methods in manufacturing of Si wafers and in thinning of completed device wafer. This study will report the evaluation on abrasion of wafer according to processing time; machining speed and pressure which have major influence on the abrasion of Si wafer polishing, for this, this study design the head unit and analysis head unit. After that, apply to experiment. It is possible to evaluation of wafer abrasion by load cell and infrared temperature sensor. The evaluation of abrasion according to processing condition is selected to use result data that measure a pressure, machining speed, and the processing time. This result is appeared by abrasion in machining condition. Through that, the study cans evaluation a wafer abrasion in machining. It is important to obtain mirror-like wafer surface.

Construction of the Distribution System for Ozonized Water Used in the Wet Cleaning of Si Wafer Surface

1998 ◽  
Vol 65-66 ◽  
pp. 161-164 ◽  
Author(s):  
Osamu Nakamura ◽  
M. Yoshida ◽  
Yasuharu Shirai ◽  
Masakazu Nagase ◽  
Michio Kitano ◽  
...  
Keyword(s):  
Distribution System ◽  
Wafer Surface ◽  
Si Wafer

Si wafer surface cleaning using laser-induced shock wave: a new dry cleaning methodology

2003 ◽  
Vol 169-170 ◽  
pp. 178-180 ◽  
Author(s):  
S.H. Lee ◽  
J.G. Park ◽  
J.M. Lee ◽  
S.H. Cho ◽  
H.K. Cho
Keyword(s):  
Shock Wave ◽  
Surface Cleaning ◽  
Wafer Surface ◽  
Dry Cleaning ◽  
Si Wafer

Significantly Improved Adhesion of Poly(3,4-ethylenedioxythiophene) Nanofilms to Amino-Silane Monolayer Pre-Patterned SiO2 Surfaces

2007 ◽  
Vol 7 (11) ◽  
pp. 3792-3794 ◽  
Author(s):  
Ilsun Pang ◽  
Sungsoo Kim ◽  
Jaegab Lee
Keyword(s):  
Wafer Surface ◽  
Amino Silane ◽  
Atomic Force ◽  
Wafer Substrate ◽  
Strong Adhesion ◽  
Tape Test ◽  
Vapor Phase Polymerization ◽  
Polymerization Method ◽  
Si Wafer ◽  
Pure Poly

This study reports a novel patterning method for highly pure poly(3,4-ethylenedioxythiophene) (PEDOT) nanofilms having a particularly strong adhesion to a SiO2 surface. An oxidized silicon wafer substrate was micro-contact printed with n-octadecyltrichlorosilane (OTS) monolayer, and subsequently its negative pattern was self-assembled with three different amino-functionalized alkylsilanes, (3-aminopropyl)trimethoxysilane (APS), N-(2-aminoethyl)-3-aminopropyltrimethoxy silane (EDAS), and (3-trimethoxysilylpropyl) diethylenetriamine (DETS). Then, PEDOT nanofilms were selectively grown on the aminosilane pre-patterned areas via the vapor phase polymerization method. To evaluate the adhesion and patterning, the PEDOT nanofilms and SAMs were investigated with a Scotch® tape test, contact angle analyzer, optical and atomic force microscopes. The evaluation revealed that the newly developed bottom-up process can successfully offer a strongly adhered and selectively patterned PEDOT nanofilm on an oxidized Si wafer surface.

Epitaxial Growth of Highly Crystallized InSb films on Si Substrate by MBE and Their Devices Properties

2009 ◽  
Vol 1194 ◽  
Author(s):  
Yoshihisa Kunimi ◽  
Hiromi Fujita ◽  
Ayano Sakurai ◽  
Shinichiro Akiyama ◽  
Masatoshi Miyahara ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Film Growth ◽  
Wafer Surface ◽  
Cluster Beam ◽  
Si Substrate ◽  
Hydrogen Atoms ◽  
Rocking Curve ◽  
Hall Element ◽  
Si Wafer

AbstractHigh crystallized thin InSb epitaxial growth directly on Si substrate was investigated by molecular-beam epitaxy (MBE). Experimental results indicated that suppressing the desorption of hydrogen atoms which terminated the dangling bonds of Si wafer surface and incorporation of As around the interface between film and Si substrate were the most important to obtained high crystallized InSb film. It could be achieved by the irradiation of As4 cluster beam onto the Si wafer just before film growth. Obtained thin InSb film showed mirror like surface, and its thickness was 0.7 μm. Its electron mobility was 47,600 cm2/V-s, and FWHM of HR-XRD rocking curve was about 300 arcsec. This InSb film on Si wafer was applied to Hall element, and it passed ordinary reliability tests.

scholarly journals Measurement of Nano-fine Particles on Si Wafer Surface by Laser Light Scattering Method.

2001 ◽  
Vol 67 (11) ◽  
pp. 1818-1823 ◽  
Author(s):  
Satoshi SASAKI ◽  
Hiroshi AN ◽  
Yuzo MORI ◽  
Tosihiko KATAOKA ◽  
Katsuyoshi ENDO ◽  
...  
Keyword(s):  
Light Scattering ◽  
Fine Particles ◽  
Laser Light ◽  
Laser Light Scattering ◽  
Wafer Surface ◽  
Scattering Method ◽  
Si Wafer
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