scholarly journals Flexible memory device based on polymer ferroelectric with zinc oxide single-nanowire transistors for robust multilevel operation

2021 ◽  
Vol 119 (20) ◽  
pp. 203102
Author(s):  
Young Tea Chun ◽  
Jiyoul Lee ◽  
Daping Chu
Keyword(s):  
Zinc Oxide ◽  
Memory Device ◽  
Nanowire Transistors ◽  
Single Nanowire

scholarly journals Realization of write-once-read-many-times memory device with O2 plasma-treated indium gallium zinc oxide thin film

2014 ◽  
Vol 104 (3) ◽  
pp. 033505 ◽  
Author(s):  
P. Liu ◽  
T. P. Chen ◽  
X. D. Li ◽  
Z. Liu ◽  
J. I. Wong ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Memory Device ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium ◽  
O2 Plasma

Electrical characteristics of gallium–indium–zinc oxide thin-film transistor non-volatile memory with Sm2O3 and SmTiO3 charge trapping layers

RSC Advances ◽  
2015 ◽  
Vol 5 (12) ◽  
pp. 8566-8570 ◽  
Author(s):  
Jim-Long Her ◽  
Fa-Hsyang Chen ◽  
Ching-Hung Chen ◽  
Tung-Ming Pan
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Charge Trapping ◽  
Memory Device ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Electrical Characteristics ◽  
Non Volatile Memory ◽  
Volatile Memory

In this study, we report the structural and electrical characteristics of high-κ Sm2O3 and SmTiO3 charge trapping layers on an indium–gallium–zinc oxide (IGZO) thin-film transistor (TFT) for non-volatile memory device applications.

Fabrication of printed memory device having zinc-oxide active nano-layer and investigation of resistive switching

2013 ◽  
Vol 13 (1) ◽  
pp. 90-96 ◽  
Author(s):  
Nauman Malik Muhammad ◽  
Navaneethan Duraisamy ◽  
Khalid Rahman ◽  
Hyun Woo Dang ◽  
Jeongdae Jo ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Resistive Switching ◽  
Memory Device

Zinc Oxide Nanowire Sensor Packaging

2018 ◽  
Vol 2018 (1) ◽  
pp. 000447-000451
Author(s):  
Bruce Kim ◽  
Sang-Bock Cho
Keyword(s):  
Zinc Oxide ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Zno Nanowire ◽  
Single Nanowire ◽  
Edax Analysis ◽  
Nanowire Sensor ◽  
Zinc Oxide Nanowire ◽  
Nanowire Device

Abstract This paper describes nano device packaging topology using array of ZnO nanowire-based devices. The single nanowire device has been fabricated through focused ion beam and e-beam lithography techniques while the SEM and EDAX analysis have been used to characterize the device. The IV characteristics of the ZnO nanowire-based array devices have been measured through a semiconductor parameter analyzer.

Indium-Gallium-Zinc-Oxide (IGZO) Nanowire Transistors

2021 ◽  
pp. 1-7
Author(s):  
Kaizhen Han ◽  
Qiwen Kong ◽  
Yuye Kang ◽  
Chen Sun ◽  
Chengkuan Wang ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Indium Gallium Zinc Oxide ◽  
Nanowire Transistors ◽  
Indium Gallium

Silver-doped zinc oxide single nanowire multifunctional nanosensor with a significant enhancement in response

2016 ◽  
Vol 223 ◽  
pp. 893-903 ◽  
Author(s):  
Oleg Lupan ◽  
Vasilii Cretu ◽  
Vasile Postica ◽  
Mahdi Ahmadi ◽  
Beatriz Roldan Cuenya ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Significant Enhancement ◽  
Single Nanowire
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