Realization of write-once-read-many-times memory device with O2 plasma-treated indium gallium zinc oxide thin film
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2014 ◽
2019 ◽
Vol 19
(10)
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pp. 6031-6035
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2015 ◽
Vol 135
(6)
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pp. 192-198
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2011 ◽
Vol 50
(3)
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pp. 03CB06
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2009 ◽
Vol 3
(7-8)
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pp. 239-241
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