scholarly journals 1.2 kV reverse blocking Schottky-drain Si–GaN monolithic integrated cascode FET

AIP Advances ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 105112
Author(s):  
Jiaqi Zhang ◽  
Weihang Zhang ◽  
Jing Wan ◽  
Guofang Yang ◽  
Yichang Wu ◽  
...  
Keyword(s):  
Reverse Blocking

Design and Fabrication of Vertical Metal/TiO2/β-Ga2O3 Dielectric Heterojunction Diode With Reverse Blocking Voltage of 1010 V

2020 ◽  
Vol 67 (12) ◽  
pp. 5628-5632
Author(s):  
Zhuangzhuang Hu ◽  
Jianguo Li ◽  
Chunyong Zhao ◽  
Zhaoqing Feng ◽  
Xusheng Tian ◽  
...  
Keyword(s):  
Heterojunction Diode ◽  
Blocking Voltage ◽  
Reverse Blocking

Reverse blocking p-GaN gate AlGaN/GaN HEMTs with hybrid p-GaN ohmic drain

2021 ◽  
pp. 106931
Author(s):  
Haiyong Wang ◽  
Wei Mao ◽  
Shenglei Zhao ◽  
Jiabo Chen ◽  
Ming Du ◽  
...  
Keyword(s):  
Reverse Blocking ◽  
Gan Hemts

scholarly journals A High-Accuracy AlGaN/GaN Reverse Blocking CRD (RB-CRD) with Hybrid Trench Cathode

2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Anbang Zhang ◽  
Qi Zhou ◽  
Chao Yang ◽  
Yuanyuan Shi ◽  
Wanjun Chen ◽  
...  
Keyword(s):  
High Accuracy ◽  
Reverse Blocking

Design and simulation of reverse-blocking Schottky-drain AlN/AlGaN HEMTs with drain field plate

2021 ◽  
Vol 65 (2) ◽  
Author(s):  
Dujun Zhao ◽  
Zhaoxi Wu ◽  
Chao Duan ◽  
Bo Mei ◽  
Zhongyang Li ◽  
...  
Keyword(s):  
Field Plate ◽  
Reverse Blocking ◽  
Drain Field
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