Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy

2021 ◽  
Vol 119 (15) ◽  
pp. 152102
Author(s):  
Kazuki Ohnishi ◽  
Seiya Kawasaki ◽  
Naoki Fujimoto ◽  
Shugo Nitta ◽  
Hirotaka Watanabe ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Junction Diode

scholarly journals Erratum: “Vertical GaN p+-n junction diode with ideal avalanche capability grown by halide vapor phase epitaxy” [Appl. Phys. Lett. 119, 152102 (2021)]

2021 ◽  
Vol 119 (20) ◽  
pp. 209901
Author(s):  
Kazuki Ohnishi ◽  
Seiya Kawasaki ◽  
Naoki Fujimoto ◽  
Shugo Nitta ◽  
Hirotaka Watanabe ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Junction Diode

Growth of GaN Nanorods by a Hydride Vapor Phase Epitaxy Method

2002 ◽  
Vol 14 (13-14) ◽  
pp. 991-993 ◽  
Author(s):  
H.-M. Kim ◽  
D.S. Kim ◽  
Y.S. Park ◽  
D.Y. Kim ◽  
T.W. Kang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Control of Surface Morphology during the Growth of (110)-Oriented GaAs by Hydride Vapor Phase Epitaxy

2021 ◽  
Author(s):  
Wondwosen Metaferia ◽  
Anna K. Braun ◽  
John Simon ◽  
Corinne E. Packard ◽  
Aaron J. Ptak ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy
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