scholarly journals Engineering and probing atomic quantum defects in 2D semiconductors: A perspective

2021 ◽  
Vol 119 (14) ◽  
pp. 140501
Author(s):  
Joshua A. Robinson ◽  
Bruno Schuler
Keyword(s):  
2D Semiconductors ◽  
Quantum Defects

Flexo-photoelectronic effect in n-type/p-type two-dimensional semiconductors and a deriving light-stimulated artificial synapse

2021 ◽  
Author(s):  
Xiang Wang ◽  
Xin Zhou ◽  
Anyang Cui ◽  
Menghan Deng ◽  
Xionghu Xu ◽  
...  
Keyword(s):  
Two Dimensional ◽  
2D Semiconductors ◽  
Artificial Synapse ◽  
P Type

We demonstrate flexo-photoelectronic effects of both n-type and p-type 2D semiconductors.

scholarly journals 2D Semiconductor Nanomaterials and Heterostructures: Controlled Synthesis and Functional Applications

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Hongyan Xu ◽  
Mohammad Karbalaei Akbari ◽  
Serge Zhuiykov
Keyword(s):  
Liquid Metals ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
First Century ◽  
2D Semiconductors ◽  
Layer Deposition ◽  
Semiconductor Nanomaterials ◽  
2D Nanomaterials ◽  
Novel Applications ◽  
Electronic Technologies

AbstractTwo-dimensional (2D) semiconductors beyond graphene represent the thinnest stable known nanomaterials. Rapid growth of their family and applications during the last decade of the twenty-first century have brought unprecedented opportunities to the advanced nano- and opto-electronic technologies. In this article, we review the latest progress in findings on the developed 2D nanomaterials. Advanced synthesis techniques of these 2D nanomaterials and heterostructures were summarized and their novel applications were discussed. The fabrication techniques include the state-of-the-art developments of the vapor-phase-based deposition methods and novel van der Waals (vdW) exfoliation approaches for fabrication both amorphous and crystalline 2D nanomaterials with a particular focus on the chemical vapor deposition (CVD), atomic layer deposition (ALD) of 2D semiconductors and their heterostructures as well as on vdW exfoliation of 2D surface oxide films of liquid metals.

Exciton dynamics and annihilation in WS2 2D semiconductors

Nanoscale ◽  
2015 ◽  
Vol 7 (16) ◽  
pp. 7402-7408 ◽  
Author(s):  
Long Yuan ◽  
Libai Huang
Keyword(s):  
Two Dimensional ◽  
Time Resolved ◽  
Exciton Dynamics ◽  
2D Semiconductors ◽  
Time Resolved Photoluminescence ◽  
2D Crystals

We systematically investigate the exciton dynamics in monolayered, bilayered, and trilayered WS2 two-dimensional (2D) crystals by time-resolved photoluminescence (TRPL) spectroscopy.

Origin of the Stokes Shift: A Geometrical Model of Exciton Spectra in 2D Semiconductors

1994 ◽  
Vol 72 (12) ◽  
pp. 1945-1945 ◽  
Author(s):  
Fang Yang ◽  
M. Wilkinson ◽  
E. J. Austin ◽  
K. P. O'Donnell
Keyword(s):  
Stokes Shift ◽  
Geometrical Model ◽  
2D Semiconductors

Field-induced superconductivity in MoS2

2013 ◽  
Vol 1549 ◽  
pp. 79-84
Author(s):  
Y. J. Zhang ◽  
J. T. Ye ◽  
Y. Iwasa
Keyword(s):  
Carrier Density ◽  
Gate Dielectric ◽  
Superconducting Phase ◽  
Common Mechanism ◽  
Continuous Control ◽  
Superconducting Transition ◽  
Charge Accumulation ◽  
Density Region ◽  
2D Semiconductors ◽  
Type Conduction

ABSTRACTWe fabricated MoS2 transistor adopting electric double layer (EDL) as gate dielectric. So far, EDL has realized p-type conducting MoS2 in addition to well-known n-type conduction showing ambipolar operation. In our study, field-effect superconducting transition of MoS2 was realized with maximum TC around 10 K. This TC is the highest not only within MoS2 compounds but also among whole TMDs. The highest TC discovered in this study lies in the carrier density region much smaller than chemically investigated region. Such compounds with small doping level have never been successfully synthesized by chemical method. Furthermore, by combining HfO2 (typical high-k material for FETs) gating with EDL gating, continuous control of carrier density, and thus quantum phase, was demonstrated. As a result, we successfully obtained the phase diagram of MoS2. Interestingly, the TC exhibits strong carrier density dependence, showing dome-shaped superconducting phase. Superconducting dome in other materials than cuprates has been reported only a few times in doped 2D semiconductors. Since FET charge accumulation is basically two dimensional, our result implies the existence of common mechanism for superconducting dome in 2D band insulators.

Quantum defects of the sodium atom in f, g and h states

1997 ◽  
Vol 30 (10) ◽  
pp. 2345-2349 ◽  
Author(s):  
S Dyubko ◽  
V Efremov ◽  
S Podnos ◽  
X Sun ◽  
K B MacAdam
Keyword(s):  
Sodium Atom ◽  
Quantum Defects

scholarly journals N-, P-, As-triphenylene-graphdiyne: Strong and stable 2D semiconductors with outstanding capacities as anodes for Li-ion batteries

Carbon ◽  
2019 ◽  
Vol 141 ◽  
pp. 291-303 ◽  
Author(s):  
Bohayra Mortazavi ◽  
Masoud Shahrokhi ◽  
Mohamed E. Madjet ◽  
Meysam Makaremi ◽  
Said Ahzi ◽  
...  
Keyword(s):  
Li Ion Batteries ◽  
2D Semiconductors ◽  
Li Ion
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