scholarly journals Observation of self-assembled InGaN/GaN superlattice structure grown on N-polar GaN by plasma-assisted molecular beam epitaxy

APL Materials ◽  
2021 ◽  
Vol 9 (12) ◽  
pp. 121114
Author(s):  
K. Khan ◽  
S. Diez ◽  
Kai Sun ◽  
C. Wurm ◽  
U. K. Mishra ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Superlattice Structure ◽  
Self Assembled

InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy

2001 ◽  
Vol 89 (7) ◽  
pp. 4186-4188 ◽  
Author(s):  
Y. F. Li ◽  
J. Z. Wang ◽  
X. L. Ye ◽  
B. Xu ◽  
F. Q. Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Assembled

Effect of annealing on formation of self-assembled (In,Ga)As quantum wires on GaAs (100) by molecular beam epitaxy

2002 ◽  
Vol 92 (7) ◽  
pp. 4043-4046 ◽  
Author(s):  
T. Mano ◽  
R. Nötzel ◽  
G. J. Hamhuis ◽  
T. J. Eijkemans ◽  
J. H. Wolter
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Quantum Wires ◽  
Self Assembled

InAs self‐assembled quantum dots on InP by molecular beam epitaxy

1996 ◽  
Vol 68 (7) ◽  
pp. 991-993 ◽  
Author(s):  
S. Fafard ◽  
Z. Wasilewski ◽  
J. McCaffrey ◽  
S. Raymond ◽  
S. Charbonneau
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Assembled

Self-assembled zinc blende GaN quantum dots grown by molecular-beam epitaxy

2000 ◽  
Vol 77 (6) ◽  
pp. 809-811 ◽  
Author(s):  
E. Martinez-Guerrero ◽  
C. Adelmann ◽  
F. Chabuel ◽  
J. Simon ◽  
N. T. Pelekanos ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zinc Blende ◽  
Self Assembled

Molecular Beam Epitaxy Growth and Structural Characterization of Si/GaAs Superlattices

1992 ◽  
Vol 263 ◽  
Author(s):  
R.J. Matyi ◽  
H.J. Gillespie ◽  
G.E. Crook ◽  
J.K. Wade
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
Structural Quality ◽  
Molecular Beam Epitaxy Growth ◽  
X Ray Diffraction ◽  
Superlattice Structure ◽  
Dynamical Simulation ◽  
Diffraction Patterns ◽  
High Level

ABSTRACTThe growth of high quality Si/GaAs superlattices on GaAs substrates using molecular beam epitaxy is described. A typical superlattice structure consisted of ten periods of thin (<5Å) layers of pseudomorphic silicon alternating with thick GaAs layers; typical GaAs thicknesses range from 100Å to 1850Å. In situ reflection high energy electron diffraction analysis of the structures during growth showed the silicon layers developed a (3 ×1) reconstruction, while the GaAs exhibited a (4×2)→(3×2)→(3×1)→(2×4) reconstruction sequence. Both observations agree with prior studies of the growth of embedded silicon in GaAs/Si/GaAs heterostructures. X-ray diffraction using the (004) reflection showed sharp and intense satellite peaks (out to 22 orders in one case), indicating a high level of structural quality. Very good agreement has been obtained between observed diffraction patterns and those calculated via dynamical simulation.

Fabrication of CdTe Quantum Dot Arrays on GaAs utilizng Nanoporous Alumina Masks

2004 ◽  
Vol 818 ◽  
Author(s):  
Mi Jung ◽  
Hong Seok Lee ◽  
Hong Lee Park ◽  
Sun-Il Mho
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Pore Density ◽  
Nanoporous Alumina ◽  
Gaas Substrates ◽  
Cdte Qds ◽  
Self Assembled ◽  
Cdte Quantum Dot

AbstractThe uniformity and reproducibility of the CdTe QD arrays on the GaAs substrates can be improved by using a nanoporous mask. The CdTe QDs on the GaAs substrate were grown by a molecular beam epitaxy (MBE) method. The nanoporous alumina masks used for the fabrication of QD arrays have the thickness from 0.3 νm to 5 νm with the nanochannels of ∼ 80 nm diameter and the pore density of ∼ 1010cm−2. When the thickness of the alumina mask used for the CdTe QD growth was about 300 nm, the CdTe QD arrays formed as a replica of the nanochannels of the mask. Smaller self-assembled CdTe QDs located randomly were produced by using the thicker nanochannel mask than 0.5 νm. The thickness of the nanochannel mask controls the size of the CdTe/GaAs QDs.

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