scholarly journals High internal quantum efficiency of long wavelength InGaN quantum wells

2021 ◽  
Vol 119 (7) ◽  
pp. 071102
Author(s):  
Saulius Marcinkevičius ◽  
Rinat Yapparov ◽  
Yi Chao Chow ◽  
Cheyenne Lynsky ◽  
Shuji Nakamura ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Long Wavelength ◽  
Ingan Quantum Wells

scholarly journals Enhancement of quantum efficiency in InGaN quantum wells by using superlattice interlayers and pulsed growth

2016 ◽  
Vol 55 (4) ◽  
Author(s):  
Kazimieras Nomeika ◽  
Mantas Dmukauskas ◽  
Ramūnas Aleksiejūnas ◽  
Patrik Ščajev ◽  
Saulius Miasojedovas ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Light Emitting Diode ◽  
Internal Quantum Efficiency ◽  
Recombination Coefficient ◽  
Time Resolved ◽  
Mocvd Growth ◽  
Lower Strain ◽  
Type Contact ◽  
Ingan Quantum Wells

Enhancement of internal quantum efficiency (IQE) in InGaN quantum wells by insertion of a superlattice interlayer and applying the pulsed growth regime is investigated by a set of time-resolved optical techniques. A threefold IQE increase was achieved in the structure with the superlattice. It was ascribed to the net effect of decreased internal electrical field due to lower strain and altered carrier localization conditions. Pulsed MOCVD growth also resulted in twice higher IQE, presumably due to better control of defects in the structure. An LED (light emitting diode) structure with a top p-type contact GaN layer was manufactured by using both growth techniques with the peak IQE equal to that in the underlying quantum well structure. The linear recombination coefficient was found to gradually increase with excitation due to carrier delocalization, and the latter dependence was successfully used to fit the IQE droop.

Measurement of the internal quantum efficiency of InGaN quantum wells

2007 ◽  
Author(s):  
A. Laubsch ◽  
M. Sabathil ◽  
G. Bruederl ◽  
J. Wagner ◽  
M. Strassburg ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Ingan Quantum Wells

Optical polarization and internal quantum efficiency for InGaN quantum wells on a-plane GaN

2010 ◽  
Vol 405 (7) ◽  
pp. 1857-1860 ◽  
Author(s):  
E.Y. Lin ◽  
C.Y. Chen ◽  
T.S. Lay ◽  
Z.X. Peng ◽  
T.Y. Lin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Optical Polarization ◽  
Ingan Quantum Wells

Integrated Rib Waveguide-Photodetector Using Si/Si1−xGex Multiple Quantum Wells for Long Wavelenghts

1991 ◽  
Vol 220 ◽  
Author(s):  
V. P. Kesan ◽  
P. G. May ◽  
G. V. Treyz ◽  
E. Bassous ◽  
S. S. Iyer ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Internal Quantum Efficiency ◽  
Optical Quality ◽  
Silicon Substrates ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Long Wavelength ◽  
Response Bandwidth ◽  
Soi Substrates

ABSTRACTWe have investigated the structural, electrical, and optical quality of epitaxial Si and Si1−xGex films grown by MBE on SIMOX (Separation by IMplanted OXygen) silicon substrates. Epitaxial films grown on these SOI substrates have been characterized using planar and cross-sectional TEM, high resolution X-ray diffraction, SIMS, and Seeco chemical etching to delineate defects. We have fabricated Si/SiGe P-i-N photodetectors integrated with Si waveguides on SOI for long wavelength applications. Low reverse leakage current densities were seen in these device structures. The photodetector exhibited an internal quantum efficiency of 50% at 1.1 μm with a frequency response bandwidth of 2 GHz.

Effect of Magnesium Diffusion Into the Active Region of LED Structures with InGaN/GaN Quantum Wells on Internal Quantum Efficiency

2014 ◽  
Vol 57 (4) ◽  
pp. 533-535 ◽  
Author(s):  
I. S. Romanov ◽  
I. A. Prudaev ◽  
А. А. Marmalyuk ◽  
V. A. Kureshov ◽  
D. R. Sabitov ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency

scholarly journals Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

2011 ◽  
Vol 19 (S4) ◽  
pp. A991 ◽  
Author(s):  
Hongping Zhao ◽  
Guangyu Liu ◽  
Jing Zhang ◽  
Jonathan D. Poplawsky ◽  
Volkmar Dierolf ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Light Emitting
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