High-speed Si films based threshold switching device and its artificial neuron application

2021 ◽  
Vol 119 (15) ◽  
pp. 153507
Author(s):  
Lei Yan ◽  
Yifei Pei ◽  
Jingjuan Wang ◽  
Hui He ◽  
Ying Zhao ◽  
...  
Keyword(s):  
High Speed ◽  
Artificial Neuron ◽  
Switching Device ◽  
Threshold Switching ◽  
Si Films

scholarly journals Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

2019 ◽  
Vol 30 (21) ◽  
pp. 215201 ◽  
Author(s):  
Xuanqi Huang ◽  
Runchen Fang ◽  
Chen Yang ◽  
Kai Fu ◽  
Houqiang Fu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Steep Slope ◽  
Switching Device ◽  
Gan Hemt ◽  
Threshold Switching

Enhanced switching characteristics of an ovonic threshold switching device with an ultra-thin MgO interfacial layer

2021 ◽  
pp. 1-1
Author(s):  
Jangseop Lee ◽  
Sangmin Lee ◽  
Myonghoon Kwak ◽  
Wooseok Choi ◽  
Oleksandr Mosendz ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Switching Device ◽  
Threshold Switching ◽  
Switching Characteristics

High-speed μc-Si films deposition and large-grain poly-Si films deposition by surface wave discharge

2007 ◽  
Vol 515 (12) ◽  
pp. 4983-4987 ◽  
Author(s):  
Y. Hotta ◽  
H. Toyoda ◽  
H. Sugai
Keyword(s):  
Surface Wave ◽  
High Speed ◽  
Si Films ◽  
Wave Discharge

Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation

2002 ◽  
Vol 738 ◽  
Author(s):  
Koji Usuda ◽  
Tomohisa Mizuno ◽  
Tsutomu Tezuka ◽  
Naoharu Sugiyama ◽  
Yoshihiko Moriyama ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
High Speed ◽  
Strain Relaxation ◽  
Strained Si ◽  
Beam Electron ◽  
Similar Tendency ◽  
Device Structures ◽  
Before And After ◽  
Low Power Cmos ◽  
Si Films

ABSTRACTStrained-Si-On-Insulator (Strained-SOI) MOSFETs are one of the most promising device structures for high speed and/or low power CMOS. In realizing strained-Si MOS LSI, fabrication of strained-Si MOSFETs with small sizes are indispensable and thus, the investigation of the strain relaxation is an important issue. Therefore, the strain relaxation of strained-SOI mesa islands with small active area was investigated in this study. Thin strained-Si films were grown on thin relaxed SiGe-on-insulator (SGOI) structures (x=0.28). The isolation process was carried out by using chemical-dry-etching (CDE) to fabricate samples with small active areas. Using Raman spectroscopy with resolution of > 1 micron meter, strained-Si islands on SGOI substrates with the size of 5 micron meter square were investigated. Rapid-thermal-annealing (RTA) in N2 atmosphere was performed to study the strain relaxation during heating processes. As a result, it was confirmed that the strained-Si layers grown on relaxed SiGe (x=0.28) before and after mesa isolation, down to 5 micron meter in size, had almost no relaxation after the RTA process at 1000°C. Furthermore, it was confirmed that the nano-beam electron diffraction (NBD) measurement showed similar tendency regarding the strain relaxation.

Artificial Neuron using Ag/2D-MoS2/Au Threshold Switching Memristor

2019 ◽  
Author(s):  
Durjoy Dev ◽  
Adithi Krishnaprasad ◽  
Zhezhi He ◽  
Sonali Das ◽  
Mashiyat Sumaiya Shawkat ◽  
...  
Keyword(s):  
Artificial Neuron ◽  
Threshold Switching

Oscillation neuron based on a low-variability threshold switching device for high-performance neuromorphic computing

2021 ◽  
Vol 42 (6) ◽  
pp. 064101
Author(s):  
Yujia Li ◽  
Jianshi Tang ◽  
Bin Gao ◽  
Xinyi Li ◽  
Yue Xi ◽  
...  
Keyword(s):  
High Performance ◽  
Neuromorphic Computing ◽  
Switching Device ◽  
Threshold Switching

Super steep-switching (SS ≈ 2 mV/decade) phase-FinFET with Pb(Zr0.52Ti0.48)O3 threshold switching device

2018 ◽  
Vol 113 (10) ◽  
pp. 102104 ◽  
Author(s):  
Jaemin Shin ◽  
Eunah Ko ◽  
June Park ◽  
Seung-Geun Kim ◽  
Jae Woo Lee ◽  
...  
Keyword(s):  
Switching Device ◽  
Threshold Switching
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