Super steep-switching (SS ≈ 2 mV/decade) phase-FinFET with Pb(Zr0.52Ti0.48)O3 threshold switching device

2018 ◽  
Vol 113 (10) ◽  
pp. 102104 ◽  
Author(s):  
Jaemin Shin ◽  
Eunah Ko ◽  
June Park ◽  
Seung-Geun Kim ◽  
Jae Woo Lee ◽  
...  
Keyword(s):  
Switching Device ◽  
Threshold Switching

scholarly journals Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

2019 ◽  
Vol 30 (21) ◽  
pp. 215201 ◽  
Author(s):  
Xuanqi Huang ◽  
Runchen Fang ◽  
Chen Yang ◽  
Kai Fu ◽  
Houqiang Fu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Steep Slope ◽  
Switching Device ◽  
Gan Hemt ◽  
Threshold Switching

Enhanced switching characteristics of an ovonic threshold switching device with an ultra-thin MgO interfacial layer

2021 ◽  
pp. 1-1
Author(s):  
Jangseop Lee ◽  
Sangmin Lee ◽  
Myonghoon Kwak ◽  
Wooseok Choi ◽  
Oleksandr Mosendz ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Switching Device ◽  
Threshold Switching ◽  
Switching Characteristics

High-speed Si films based threshold switching device and its artificial neuron application

2021 ◽  
Vol 119 (15) ◽  
pp. 153507
Author(s):  
Lei Yan ◽  
Yifei Pei ◽  
Jingjuan Wang ◽  
Hui He ◽  
Ying Zhao ◽  
...  
Keyword(s):  
High Speed ◽  
Artificial Neuron ◽  
Switching Device ◽  
Threshold Switching ◽  
Si Films

Oscillation neuron based on a low-variability threshold switching device for high-performance neuromorphic computing

2021 ◽  
Vol 42 (6) ◽  
pp. 064101
Author(s):  
Yujia Li ◽  
Jianshi Tang ◽  
Bin Gao ◽  
Xinyi Li ◽  
Yue Xi ◽  
...  
Keyword(s):  
High Performance ◽  
Neuromorphic Computing ◽  
Switching Device ◽  
Threshold Switching

Physically Transient Threshold Switching Device Based on Magnesium Oxide for Security Application

Small ◽  
2018 ◽  
Vol 14 (27) ◽  
pp. 1800945 ◽  
Author(s):  
Jing Sun ◽  
Hong Wang ◽  
Fang Song ◽  
Zhan Wang ◽  
Bingjie Dang ◽  
...  
Keyword(s):  
Magnesium Oxide ◽  
Switching Device ◽  
Threshold Switching ◽  
Security Application

Room temperature fabricated NbOx/Nb2O5 memory switching device with threshold switching effect

2013 ◽  
Author(s):  
Hannes Mahne ◽  
Helge Wylezich ◽  
Stefan Slesazeck ◽  
Thomas Mikolajick ◽  
Jozef Vesely ◽  
...  
Keyword(s):  
Room Temperature ◽  
Switching Effect ◽  
Switching Device ◽  
Memory Switching ◽  
Threshold Switching

Modulating the filament rupture degree of threshold switching device for self-selective and low-current nonvolatile memory application

2020 ◽  
Vol 31 (14) ◽  
pp. 144002 ◽  
Author(s):  
Xiaolong Zhao ◽  
Jiebin Niu ◽  
Yang Yang ◽  
Xiangheng Xiao ◽  
Rui Chen ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Switching Device ◽  
Threshold Switching
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