scholarly journals Wave-driven torques to drive current and rotation

2021 ◽  
Vol 28 (10) ◽  
pp. 102506
Author(s):  
Ian E. Ochs ◽  
Nathaniel J. Fisch
Keyword(s):  
Drive Current

Reduction of Wind Disturbance by Optimizing the Drive Current of Pt Ultra-thin Film Hydrogen Sensor

2020 ◽  
Vol 140 (4) ◽  
pp. 92-96
Author(s):  
Yuto Goda ◽  
Hiroto Shobu ◽  
Kenji Sakai ◽  
Toshihiko Kiwa ◽  
Kenji Kondo ◽  
...  
Keyword(s):  
Thin Film ◽  
Hydrogen Sensor ◽  
Wind Disturbance ◽  
Drive Current ◽  
Ultra Thin Film

Novel Aluminum Segregation at NiSi/ ${p}^{+}$-Si Source/Drain Contact for Drive Current Enhancement in $P$-Channel FinFETs

2009 ◽  
Vol 30 (1) ◽  
pp. 85-87 ◽  
Author(s):  
M. Sinha ◽  
M. Sinha ◽  
R.T.P. Lee ◽  
Kian-Ming Tan ◽  
Guo-Qiang Lo ◽  
...  
Keyword(s):  
Drive Current

scholarly journals Precise phase control of resonant MOEMS mirrors by comb-drive current feedback

Mechatronics ◽  
2020 ◽  
Vol 71 ◽  
pp. 102420
Author(s):  
David Brunner ◽  
Han Woong Yoo ◽  
Georg Schitter
Keyword(s):  
Phase Control ◽  
Comb Drive ◽  
Current Feedback ◽  
Drive Current

Stress dependence and poly-pitch scaling characteristics of (110) PMOS drive current

2007 ◽  
Author(s):  
B. Yang ◽  
K. Nummy ◽  
A. Waite ◽  
L. Black ◽  
H. Gossmann ◽  
...  
Keyword(s):  
Stress Dependence ◽  
Drive Current

Influence of Neutral Line to the Optimal Drive Current of PMAC Motors

2013 ◽  
Vol 49 (6) ◽  
pp. 2483-2488 ◽  
Author(s):  
Chao Bi ◽  
Nay Lin Htun Aung ◽  
Cheng Su Soh ◽  
Quan Jiang ◽  
Hla Nu Phyu ◽  
...  
Keyword(s):  
Neutral Line ◽  
Drive Current

A Steep-Slope MoS2/Graphene Dirac-Source Field-Effect Transistor with a Large Drive Current

Nano Letters ◽  
2021 ◽  
Vol 21 (4) ◽  
pp. 1758-1764
Author(s):  
Zhaowu Tang ◽  
Chunsen Liu ◽  
Xiaohe Huang ◽  
Senfeng Zeng ◽  
Liwei Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Steep Slope ◽  
Drive Current ◽  
Source Field ◽  
Effect Transistor

Study the Effect of Junction Temperature on the Peak Wavelength in GaN-Based High-Power Green Light Emitting Diodes

2011 ◽  
Vol 399-401 ◽  
pp. 1034-1038
Author(s):  
Rong Rong Zhuang ◽  
Ping Cai ◽  
Jiang Li Huang
Keyword(s):  
High Power ◽  
Temperature Rise ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Red Shift ◽  
Junction Temperature ◽  
Spectral Peak ◽  
Peak Wavelength ◽  
Drive Current ◽  
Light Emitting

The junction temperature of GaN-based high-power green light emitting diodes is measured using the temperature coefficients of the diode forward voltage, from changes in temperature and changes in drive current to measure the LED junction temperature and the corresponding spectral, Respectively. Experiments show that, junction temperature due to environmental temperature increased, and the red shift of the spectral peak wavelength. When low temperature or less then the rated current range, the drive current increased in junction temperature rise due to the spectral peak wavelength blue shift . When the current is increased in the range of close to or greater than the rated current, leading to the junction temperature rise will cause spectral red shift . The peak wavelengths’ shift degree of 0.0579nm / k, 0.0751 nm / k and-0.1974nm / k, -0.0915 nm / k are calculated in both cases. The phenomenon is due to the LED junction temperature increases lead to band gap shrinkage, and the result of the role of spontaneous polarization and piezoelectric polarization in Ⅲ-nitride semiconductor materials.

scholarly journals 3D Double Gate FinFET Construction of 30 nm Technology Node Impact Towards Short Channel Effect

2018 ◽  
Vol 12 (3) ◽  
pp. 1358
Author(s):  
Ameer F. Roslan ◽  
F. Salehuddin ◽  
A.S. M.Zain ◽  
K.E. Kaharudin ◽  
H. Hazura ◽  
...  
Keyword(s):  
Leakage Current ◽  
Electrical Characterization ◽  
Channel Length ◽  
Double Gate ◽  
Short Channel ◽  
3D Design ◽  
Drive Current ◽  
Minimum Requirement ◽  
Technology Roadmap ◽  
Low Performance

<p>This paper presents an investigation on properties of Double Gate FinFET (DGFinFET) and impact of physical properties of FinFET towards short channel effects (SCEs) for 30 nm device, where depletion-layer widths of the source-drain corresponds to the channel length aside from constant fin height (HFIN) and the fin thickness (TFIN). Virtual fabrication process of 3-dimensional (3D) design is applied throughout the study and its electrical characterization is employed and substantial is shown towards the FinFET design whereby in terms of the ratio of drive current against the leakage current (ION/IOFF ratio) at 563138.35 compared to prediction made by the International Technology Roadmap Semiconductor (ITRS) 2013. Conclusively, the incremental in ratio has fulfilled the desired in incremental on the drive current as well as reductions of the leakage current. Threshold voltage (VTH) meanwhile has also achieved the nominal requirement predicted by the International Technology Roadmap Semiconductor (ITRS) 2013 for which is at 0.676±12.7% V. The ION , IOFF and VTH obtained from the device has proved to meet the minimum requirement by ITRS 2013 for low performance Multi-Gate technology.</p>

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