Magnetoresistance ratio of more than 1% at room temperature in germanium vertical spin-valve devices with Co2FeSi

2021 ◽  
Vol 119 (19) ◽  
pp. 192404
Author(s):  
A. Yamada ◽  
M. Yamada ◽  
M. Honda ◽  
S. Yamada ◽  
K. Sawano ◽  
...  
Keyword(s):  
Room Temperature ◽  
Spin Valve ◽  
Magnetoresistance Ratio

Giant Magnetoresistance in FeMn/NiCoFe/Cu/NiCoFe Spin Valve Prepared by Opposed Target Magnetron Sputtering

2014 ◽  
Vol 979 ◽  
pp. 85-89 ◽  
Author(s):  
Ramli ◽  
Euis Sustini ◽  
Nurlaela Rauf ◽  
Mitra Djamal
Keyword(s):  
Magnetron Sputtering ◽  
Layer Thickness ◽  
Coercive Field ◽  
Giant Magnetoresistance ◽  
Room Temperature ◽  
Spin Valve ◽  
Ferromagnetic Layer ◽  
Vibrating Sample Magnetometer ◽  
Magnetoresistance Ratio ◽  
Scanning Electron

The giant magnetoresistance (GMR) effect in FeMn/NiCoFe/Cu/NiCoFe spin valve prepared by dc opposed target magnetron sputtering is reported. The spin valve thin films are characterized by Scanning Electron Microscopy (SEM), Vibrating Sample Magnetometer (VSM) and magnetoresistance ratio measurements. All measurements are performed in room temperature. The inserted 45 mm thickness FeMn layer to the NiCoFe/Cu/NiCoFe system can increase the GMR ratio up to 32.5%. The coercive field to be increased is compared with different FeMn layer thickness. Furthermore, the coercive field (Hc) decreases with increasing FeMn layer thickness. Magnitude of coercive field is 0.1 T, 0.09 T and 0.08 T for FeMn layer thickness is 30 nm, 45 nm and 60 nm, respectively. The FeMn layer is used to lock the magnetization in the ferromagnetic layer through the exchange anisotropy. This paper will describe the development of a GMR spin valve and its magnetic properties.

scholarly journals Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions

2021 ◽  
Vol 118 (4) ◽  
pp. 042411
Author(s):  
Thomas Scheike ◽  
Qingyi Xiang ◽  
Zhenchao Wen ◽  
Hiroaki Sukegawa ◽  
Tadakatsu Ohkubo ◽  
...  
Keyword(s):  
Room Temperature ◽  
Tunnel Junctions ◽  
Spin Valve ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Magnetoresistance

Room temperature spin valve effect in the NiFe/Gr–hBN/Co magnetic tunnel junction

2016 ◽  
Vol 4 (37) ◽  
pp. 8711-8715 ◽  
Author(s):  
Muhammad Zahir Iqbal ◽  
Salma Siddique ◽  
Ghulam Hussain ◽  
Muhammad Waqas Iqbal
Keyword(s):  
Boron Nitride ◽  
Tunnel Junction ◽  
Room Temperature ◽  
Hexagonal Boron Nitride ◽  
Spin Valve ◽  
Magnetic Tunnel Junction ◽  
Valve Effect ◽  
First Time

Graphene and hexagonal boron nitride (hBN) have shown fascinating features in spintronics due to their metallic and tunneling behaviors, respectively. In this work, we report for the first time room temperature spin valve effect in NiFe/Gr–hBN/Co configuration.

scholarly journals Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves

2020 ◽  
Vol 13 (8) ◽  
pp. 083002
Author(s):  
Hayato Koike ◽  
Soobeom Lee ◽  
Ryo Ohshima ◽  
Ei Shigematsu ◽  
Minori Goto ◽  
...  
Keyword(s):  
Room Temperature ◽  
Spin Valves ◽  
Magnetoresistance Ratio ◽  
Silicon Based

Towards a Room Temperature Organic Spin Valve: Structural, Magnetic and Transport Properties of Fe3O4/PTCTE/Co Devices

2011 ◽  
Vol 1359 ◽  
Author(s):  
Mathieu Palosse ◽  
Elena Bedel-Pereira ◽  
François Olivié ◽  
Isabelle Séguy ◽  
Christina Villeneuve ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Current Distribution ◽  
Morphological Study ◽  
Room Temperature ◽  
Spin Valve ◽  
Vibrating Sample Magnetometer ◽  
Force Microscopy ◽  
Dc Sputtering ◽  
Ferromagnetic Electrodes ◽  
Atomic Force

ABSTRACTThis paper describes first steps in preparation of an organic spin valve based on a perylene derivative (PTCTE) sandwiched between magnetite (Fe3O4) and cobalt (Co) ferromagnetic electrodes. MgO(001)/Fe3O4/PTCTE (450 nm)/Co devices were prepared with different Co soft deposition methods: off-axis dc-sputtering or Joule evaporation. Vibrating Sample Magnetometer (VSM) studies of the Fe3O4/PTCTE/Co stacks evidence spin valve behavior with magnetically uncoupled electrodes. These results are correlated with a morphological study by atomic force microscopy (AFM) of each layer and tunneling AFM (TUNA) for the investigation of inhomogeneity of current distribution in the devices. Finally, macroscopic I-V characteristics performed on the same devices will be presented and compared with TUNA results.

Novel room-temperature spin-valve-like magnetoresistance in magnetically coupled nano-column Fe3O4/Ni heterostructure

Nanoscale ◽  
2016 ◽  
Vol 8 (34) ◽  
pp. 15737-15743 ◽  
Author(s):  
Wen Xiao ◽  
Wendong Song ◽  
Tun Seng Herng ◽  
Qing Qin ◽  
Yong Yang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Spin Valve
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