Tuning of electronic and magnetic properties in 2D van der Waals hybrid ferromagnet (Fe3GeTe2/Co3GeTe2)

2021 ◽  
Author(s):  
K. M. Athira ◽  
B. R. Bhagat ◽  
Alpa Dashora
Keyword(s):  
Magnetic Properties ◽  
Van Der Waals ◽  
Electronic And Magnetic Properties

Structural, thermodynamic, electronic, and magnetic properties of superconducting FeSe-CsCl type: Ab initio searching technique with van der Waals corrections

2021 ◽  
pp. 124708
Author(s):  
Prayoonsak Pluengphon ◽  
Prutthipong Tsuppayakorn-aek ◽  
Burapat Inceesungvorn ◽  
Udomsilp Pinsook ◽  
Thiti Bovornratanaraks
Keyword(s):  
Magnetic Properties ◽  
Ab Initio ◽  
Van Der Waals ◽  
Electronic And Magnetic Properties ◽  
Cscl Type ◽  
Type Ab

Structural, electronic and magnetic properties of S sites vacancy defects graphene/MoS2 van der Waals heterostructures: First-principles study

2021 ◽  
pp. 2150009
Author(s):  
Hari Krishna Neupane ◽  
Narayan Prasad Adhikari
Keyword(s):  
Magnetic Properties ◽  
Magnetic Moment ◽  
First Principles ◽  
Density Functional ◽  
Dominant Role ◽  
Van Der Waals ◽  
Schottky Contact ◽  
Unequal Distribution ◽  
Vacancy Defects ◽  
Electronic And Magnetic Properties

In this work, we investigated the geometrical structures, electronic and magnetic properties of S sites vacancy defects in heterostructure graphene/molybdenum disulphide ((HS)G/MoS[Formula: see text] material by performing first-principles calculations based on spin polarized Density Functional Theory (DFT) method within van der Waals (vdW) corrections (DFT-D2) approach. All the structures are optimized and relaxed by BFGS method using computational tool Quantum ESPRESSO (QE) package. We found that both (HS)G/MoS2 and S sites vacancy defects in (HS)G/MoS2 (D1S–(HS)G/MoS2, U1S–(HS)G/MoS2, 2S–(HS)G/MoS2 and 3S–(HS)G/MoS[Formula: see text] are stable materials, and atoms in defects structures are more compact than in pristine (HS)G/MoS2 structure. From band structure calculations, we found that (HS)G/MoS2, (D1S–(HS)G/MoS2, U1S–(HS)G/MoS2, 2S–(HS)G/MoS2 and 3S–(HS)G/MoS[Formula: see text] materials have [Formula: see text]-type Schottky contact. The Dirac cone is formed in conduction band of the materials mentioned above. The barrier height of Dirac cones from Fermi energy level of (HS)G/MoS2, (D1S–(HS)G/MoS2, U1S–(HS)G/MoS2, 2S–(HS)G/MoS2 and 3S–(HS)G/MoS[Formula: see text] materials have values 0.56[Formula: see text]eV, 0.62[Formula: see text]eV, 0.62[Formula: see text]eV, 0.64[Formula: see text]eV and 0.65[Formula: see text]eV, respectively, which means they have metallic properties. To study the magnetic properties of materials, we have carried out DoS and PDoS calculations. We found that (HS)G/MoS2, D1S–(HS)G/MoS2 and U1S–(HS)G/MoS2 materials have non-magnetic properties, and 2S–(HS)G/MoS2 and 3S–(HS)G/MoS2 materials have magnetic properties. Therefore, the non-magnetic (HS)G/MoS2 changes to magnetic 2S–(HS)G/MoS2 and 3S–(HS)G/MoS2 materials due to 2S and 3S atoms vacancy defects, respectively, in (HS)G/MoS2 material. Magnetic moment obtained in 2S–(HS)G/MoS2 and 3S–(HS)G/MoS2 materials due to the unequal distribution of up and down spin states of electrons in 2s and 2p orbitals of C atoms; 4p, 4d and 5s orbitals of Mo atoms; and 3s and 3p orbitals of S atoms in structures. Magnetic moment of 2S–(HS)G/MoS2 and 3S–(HS)G/MoS2 materials is −0.11[Formula: see text][Formula: see text]/cell and [Formula: see text]/cell, respectively, and spins of 2p orbital of C atoms, 3p orbital of S atoms and 4d orbital of Mo atoms have dominant role to create magnetism in 2S–(HS)G/MoS2 and 3S–(HS)G/MoS2 materials.

Strain-controlled electronic and magnetic properties of tVS2/hVS2 van der Waals heterostructures

2021 ◽  
Author(s):  
Dan Jin ◽  
Meimei Shi ◽  
Pan Li ◽  
Huiyan Zhao ◽  
Man Shen ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Ground State ◽  
Van Der Waals ◽  
Van Der Waals Heterostructures ◽  
Electronic And Magnetic Properties ◽  
Half Metal

The ferromagnetic tVS2/hVS2 heterostructure is the ground state under normal conditions or biaxial strains. The tVS2/hVS2 heterostructure can be switched from a gapless semiconductor to a metal or a half-metal under biaxial or uniaxial strains.

Effects of Se substitution and transition metal doping on the electronic and magnetic properties of a MoSxSe2−x/h-BN heterostructure

2019 ◽  
Vol 21 (36) ◽  
pp. 20073-20082 ◽  
Author(s):  
Fei-Fei Yu ◽  
Sha-Sha Ke ◽  
Shan-Shan Guan ◽  
Hong-Xiang Deng ◽  
Yong Guo ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Transition Metal ◽  
Physical Properties ◽  
Van Der Waals ◽  
Transition Metal Doping ◽  
Metal Doping ◽  
Van Der Waals Heterostructures ◽  
Electronic And Magnetic Properties ◽  
Se Substitution

The van der Waals heterostructures created by stacking two monolayer semiconductors have been rapidly developed experimentally and exhibit various unique physical properties.

Tunable electronic and magnetic properties of monolayer MoS2 on decorated AlN nanosheets: a van der Waals density functional study

2015 ◽  
Vol 17 (35) ◽  
pp. 23207-23213 ◽  
Author(s):  
C. He ◽  
W. X. Zhang ◽  
T. Li ◽  
L. Zhao ◽  
X. G. Wang
Keyword(s):  
Density Functional Theory ◽  
Magnetic Properties ◽  
Density Functional ◽  
Van Der Waals ◽  
Functional Study ◽  
Monolayer Mos2 ◽  
Functional Theory ◽  
Density Functional Study ◽  
Electronic And Magnetic Properties

The structural, electronic, and magnetic properties of monolayer MoS2 on decorated AlN nanosheets have been systematically investigated using density functional theory with van der Waals corrections.

Structural, Electronic and Magnetic Properties of Impurities Defected Graphene/MoS2 Van Der Waals Heterostructure: First-principles Study

2021 ◽  
Vol 7 (2) ◽  
pp. 1-8
Author(s):  
H. K. Neupane ◽  
N. P. Adhikari
Keyword(s):  
Magnetic Properties ◽  
Magnetic Moment ◽  
Van Der Waals ◽  
Schottky Contact ◽  
Electronic And Magnetic Properties ◽  
Impurity Defect ◽  
Spin Polarized ◽  
Device Applications ◽  
Properties Of Materials ◽  
P Type

Two-dimensional (2D) pristine and defected van der Waals (vdW) heterostructure (HS) materials open up fortune in nanoelectronic and optoelectronic devices. So, they are compatible for designing in the fields of device applications. In the present work, we studied structural, electronic and magnetic properties of vdW (HS) graphene/MoS2 ((HS)G/MoS2), Nb impurity defect in vdW (HS) graphene/MoS2 (Nb-(HS)G/MoS2), and Tc impurity defect in vdW (HS) graphene/MoS2 (Tc-(HS)G/MoS2) materials by using spin-polarized DFT-D2 method. We examined the structure of these materials, and found that they are stable. Based on band structure analysis, we found that (HS)G/MoS2, Nb-(HS)G/MoS2 and Tc-(HS)G/MoS2 have metallic characteristics. Also, (HS)G/MoS2 and Tc-(HS)G/MoS2 materials have n-type Schottky contact, while Nb-(HS)G/MoS2 material has p-type Schottky contact. To understand the magnetic properties of materials, we have used DoS, IDoS and PDoS calculations. We found that (HS)G/MoS2 is a non-magnetic material, but Nb-(HS)G/MoS2 and Tc-(HS)G/MoS2 are magnetic materials. Magnetic moment of Nb-(HS)G/MoS2 and Tc-(HS)G/MoS2 materials are -0.24 μB/cell and +0.07μB/cell values respectively from DoS/PDoS calculations, and 0.26 μB/cell and 0.08μB/cell values respectively from IDoS calculations. Up-spin and down-spin states of electrons in 2p orbital of C atoms, 3p orbital of S atoms, 4d orbital of Mo atoms, 4d orbital of Tc atom in Tc-(HS)G/MoS2, and 2p orbital of C atoms, 3p orbital of S atoms, 4p & 4d orbitals of Mo atoms, 4p & 4d orbitals of Nb atom in Nb-(HS)G/MoS2 have major contribution for the development of magnetic moment.

scholarly journals Tuning Structural, Electronic, and Magnetic Properties of C Sites Vacancy Defects in Graphene/MoS2 van der Waals Heterostructure Materials: A First-Principles Study

2020 ◽  
Vol 2020 ◽  
pp. 1-11
Author(s):  
Hari Krishna Neupane ◽  
Narayan Prasad Adhikari
Keyword(s):  
Magnetic Properties ◽  
Band Structure ◽  
Density Of States ◽  
First Principles ◽  
Magnetic Moments ◽  
Van Der Waals ◽  
Partial Density ◽  
Vacancy Defects ◽  
Electronic And Magnetic Properties ◽  
Structure Density

In this work, we systematically studied the structure, and electronic and magnetic properties of van der Waals (vdWs) interface Graphene/MoS2 heterostructure (HS-G/MoS2) and C sites vacancy defects in HS-G/MoS2 materials using first-principles calculations. By the structural analysis, we found that nondefects geometry is more compact than defects geometries. To investigate the electronic and magnetic properties of HS-G/MoS2 and C sites vacancy defects in HS-G/MoS2 materials, we have studied band structure, density of states (DOS), and partial density of states (PDOS). By analyzing the results, we found that HS-G/MoS2 is metallic in nature but C sites vacancy defects in HS-G/MoS2 materials have a certain energy bandgap. Also, from the band structure calculations, we found that Fermi energy level shifted towards the conduction band in vacancy defects geometries which reveals that the defected heterostructure is n-type Schottky contacts. From DOS and PDOS analysis, we obtained that the nonmagnetic HS-G/MoS2 material changes to magnetic materials due to the presence of C sites vacancy defects. Right 1C atom vacancy defects (R-1C), left 1C atom vacancy defects (L-1C), centre 1C atom vacancy defects (C-1C), and 2C (1C right and 1C centre) atom vacancy defects in HS-G/MoS2 materials have magnetic moments of −0.75 µB/cell, −0.75 µB/cell, −0.12 µB/cell, and +0.39 µB/cell, respectively. Electrons from 2s and 2p orbitals of C atoms have main contributions for the magnetism in all these materials.

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